Kungani i-N channel MOSFET ikhethwa kune-P channel MOSFET?

Kungani i-N channel MOSFET ikhethwa kune-P channel MOSFET?

Isikhathi Sokuthumela: Dec-13-2024

Okuhamba phambili okubalulekile:Ama-MOSFET wesiteshi se-N akhethwa ezinhlelweni eziningi ngenxa yezici zawo zokusebenza okuphezulu, okuhlanganisa ukumelana okuphansi, isivinini sokushintsha esiphezulu, nokonga okungcono kwezindleko. Lo mhlahlandlela ophelele uchaza ukuthi kungani kuyiyona ndlela yokuzikhethela yokuklama kwamandla kagesi.

Ukuqonda Okubalulekile: I-N-Channel vs P-Channel MOSFETs

I-N-Channel vs P-Channel MOSFETsEzweni lamandla kagesi, ukukhetha phakathi kwe-N-channel kanye ne-P-channel MOSFET kubalulekile ekwakhiweni kwesekethe efanele. Zombili lezi zinhlobo zinezindawo zazo, kodwa ama-MOSFET wesiteshi se-N avele njengenketho ekhethwayo ezinhlelweni eziningi. Ake sihlole ukuthi kungani.

Isakhiwo Esiyisisekelo nokusebenza

I-N-channel MOSFETs yenza okwamanje kusetshenziswa ama-electron njengabathwali abaningi, kuyilapho ama-MOSFET e-P-channel esebenzisa izimbobo. Lo mehluko oyisisekelo uholela ezinzuzweni ezimbalwa ezibalulekile zamadivayisi wesiteshi se-N:

  • Ukuhamba kwenkampani yenethiwekhi ephezulu (ama-electron vs izimbobo)
  • Ukumelana okuphansi (i-RDS(ku)
  • Izici ezingcono zokushintsha
  • Inqubo yokukhiqiza engabizi kakhulu

Izinzuzo Eziyinhloko ze-N-Channel MOSFETs

1. Superior Electrical Performance

Ama-MOSFET e-N-channel ahlala enza kangcono kunozakwabo we-P-channel ezindaweni ezimbalwa ezibalulekile:

Ipharamitha I-N-Channel MOSFET I-P-Channel MOSFET
I-Carrier Mobility ~1400 cm²/V·s ~450 cm²/V·s
I-On-Resistance Phansi Phezulu (2.5-3x)
Ukushintsha Isivinini Ngokushesha Kancane

Kungani Khetha i-Winsok's N-Channel MOSFETs?

I-Winsok inikeza uhla olubanzi lwama-MOSFET esiteshi se-N asebenza kahle, okuhlanganisa nochungechunge lwethu oluphambili lwe-2N7000, olulungele izinhlelo zakho zokusebenza zamandla kagesi. Amadivayisi ethu afaka:

  • Imininingwane ye-RDS(on) ehamba phambili embonini
  • Ukusebenza okuphezulu kwe-thermal
  • Amanani okuncintisana
  • Ukusekelwa okubanzi kobuchwepheshe

Izicelo Ezisebenzayo Nokucatshangelwa Kwedizayini

1. Izicelo Zokuphakela Amandla

Ama-MOSFET wesiteshi se-N ahamba phambili ekushintsheni imiklamo yokuphakelwa kwamandla, ikakhulukazi ku:

Ama-Buck Converters

I-N-channel MOSFETs ilungele ukushintshwa kwe-high-side ne-low-side kuma-buck converters ngenxa yabo:

  • Amandla okushintsha ngokushesha (imvamisa engu-<100ns)
  • Ukulahleka kokuqhuba okuphansi
  • Ukusebenza okuhle kakhulu kwe-thermal

Khulisa abaguquli

Ku-boost topology, amadivayisi wesiteshi se-N anikeza:

  • Ukusebenza okuphezulu kumafrikhwensi okushintsha aphakeme
  • Ukuphathwa okungcono kwe-thermal
  • Isibalo sezingxenye esincishisiwe kweminye imiklamo

2. Izicelo Zokulawula Izimoto

isithombeUkubusa kwama-MOSFET wesiteshi se-N ezinhlelweni zokulawulwa kwezimoto kungabangelwa izici ezimbalwa:

Isici sohlelo lokusebenza Inzuzo Yesiteshi Se-N Umthelela Ekusebenzeni
H-Bridge Circuits Ukumelana okuphelele okuphansi Ukusebenza kahle okuphezulu, ukunciphisa ukukhiqizwa kokushisa
Ukulawulwa kwe-PWM Isivinini sokushintsha ngokushesha Ukulawula isivinini okungcono, ukusebenza kahle
Ukusebenza Kwezindleko Kudingeka usayizi omncane wokufa Izindleko zesistimu ezincishisiwe, inani elingcono

Umkhiqizo Ofakiwe: I-Winsok's 2N7000 Series

Ama-MOSFET ethu angu-2N7000 N-channel aletha ukusebenza okukhethekile kwezinhlelo zokusebenza zokulawula izimoto:

  • I-VDS(ubukhulu): 60V
  • I-RDS(ivuliwe): 5.3Ω ejwayelekile ku-VGS = 10V
  • Ukushintsha ngokushesha: tr = 10ns, tf = 10ns
  • Itholakala kumaphakheji we-TO-92 kanye ne-SOT-23

Ukuthuthukisa Idizayini kanye Nemikhuba Engcono Kakhulu

Ukucatshangelwa kwe-Gate Drive

Idizayini efanele yedrayivu yesango ibalulekile ekukhuliseni ukusebenza kwe-N-channel MOSFET:

  1. Ukukhethwa kwe-Gate VoltageI-voltage yesango efanelekile iqinisekisa ubuncane be-RDS(ivuliwe) ngenkathi kugcinwa ukusebenza okuphephile:
    • I-Logic-leveli: 4.5V - 5.5V
    • Okujwayelekile: 10V - 12V
    • Isilinganiso esiphezulu: Ngokuvamile ngu-20V
  2. I-Gate Resistance OptimizationIjubane lokushintsha ibhalansi ngokucatshangwa kwe-EMI:
    • I-RG Ephansi: Ukushintsha ngokushesha, i-EMI ephezulu
    • I-RG Ephakeme: I-EMI ephansi, ukwanda kokulahlekelwa kokushintsha
    • Ibanga elijwayelekile: 10Ω – 100Ω

Izixazululo Zokuphatha Okushisayo

Ukuphatha okushisayo okusebenzayo kubalulekile ekusebenzeni okuthembekile:

Uhlobo Lwephakheji Ukumelana nokushisa (°C/W) Indlela Yokupholisa Enconyiwe
KUYA-220 62.5 (I-Junction to Ambient) I-Heatsink + Fan ye>5W
TO-252 (DPAK) 92.3 (I-Junction to Ambient) PCB Copper Pour + Air Flow
I-SOT-23 250 (I-Junction to Ambient) I-PCB Copper Pour

Ukwesekwa Kwezobuchwepheshe Nezinsiza

I-Winsok inikeza ukwesekwa okuphelele kokusetshenziswa kwakho kwe-MOSFET:

  • Amanothi esicelo anemininingwane nemihlahlandlela yokuklama
  • Amamodeli we-SPICE wokulingisa kwesekhethi
  • Usizo lokuklama okushisayo
  • Izincomo zesakhiwo se-PCB

Ukuhlaziywa Kwezindleko-Inzuzo

Ingqikithi Yezindleko Zobunikazi Ukuqhathaniswa

Uma uqhathanisa izixazululo ze-N-channel ne-P-channel, cabangela lezi zici:

I-Cost Factor Isixazululo se-N-Channel Isixazululo se-P-Channel
Izindleko Zedivayisi Phansi Phezulu (20-30%)
Drive Circuit Ubunkimbinkimbi obumaphakathi Kulula
Izidingo zokupholisa Phansi Phezulu
Izindleko Zesistimu Zizonke Phansi Phezulu

Ukukhetha Okulungile

Nakuba ama-MOSFET esiteshi se-P enendawo yawo ezinhlelweni ezithile, ama-MOSFET esiteshi se-N anikeza ukusebenza okuphakeme kanye nenani emiklamweni eminingi. Izinzuzo zabo ekusebenzeni kahle, isivinini, kanye nezindleko zibenza babe yinketho ekhethwayo yama-electronics amandla esimanje.

Ulungele Ukulungiselela Idizayini Yakho?

Xhumana nethimba lezobuchwepheshe likaWinsok ukuze uthole usizo lokukhetha i-MOSFET yomuntu siqu kanye nezicelo zesampula.