Zisho ukuthini izikhonkwane ezintathu u-G, S, no-D we-MOSFET epakishiwe?

Lokhu kupakishiweI-MOSFETinzwa ye-infrared ye-pyroelectric. Uzimele ongunxande yiwindi lezinzwa. Iphinikhodi ye-G iyitheminali yaphansi, iphinikhodi engu-D iwukukhipha amanzi kwangaphakathi kwe-MOSFET, kanti iphinikhodi engu-S ingumthombo wangaphakathi we-MOSFET. Kusekhethi, u-G uxhumeke emhlabathini, u-D uxhunywe kugesi ovumayo, amasiginali we-infrared afakwa efasiteleni, namasiginali kagesi aphuma ku-S.

Isango lokwahlulela G

Umshayeli we-MOS udlala indima enkulu ekubumbeni i-waveform kanye nokuthuthukisa ukushayela: Uma i-G signal waveform yeI-MOSFETayimanqamu ngokwanele, izodala inani elikhulu lokulahleka kwamandla ngesikhathi sesiteji sokushintshwa. Umphumela wayo oseceleni uwukunciphisa ukusebenza kahle kokuguqulwa kwesekethe. I-MOSFET izoba nomkhuhlane omkhulu futhi ilinyazwe kalula ukushisa. Kukhona i-capacitance ethile phakathi kwe-MOSFETGS. , uma ikhono lokushayela isignali ye-G linganele, lizophazamisa kakhulu isikhathi sokugxuma kwe-waveform.

I-Short-circuit isigxobo se-GS, khetha izinga le-R × 1 le-multimeter, xhuma i-black test lead ku-S pole, futhi ukuhlolwa okubomvu kuholele esigxotsheni sika-D. Ukumelana kufanele kube ngo-Ω abambalwa kuye ngaphezu kuka-Ω abayishumi. Uma kutholakala ukuthi ukumelana kwephinikhodi ethile kanye nezikhonkwane zayo ezimbili akupheli, futhi kusengapheli ngemva kokushintshanisa imikhondo yokuhlola, kuyaqinisekiswa ukuthi le phini i-G pole, ngoba ifakwe kwezinye izikhonkwane ezimbili.

Nquma umthombo S bese ukhipha u-D

Setha i-multimeter ku-R×1k bese ukala ukumelana phakathi kwamaphini amathathu ngokulandelana. Sebenzisa indlela yokuhola yokuhlola ukushintshanisa ukukala ukumelana kabili. Lena enenani eliphansi lokumelana (ngokuvamile izinkulungwane ezimbalwa Ω ukuya ngaphezu kwezinkulungwane eziyishumi Ω) ukumelana phambili. Ngalesi sikhathi, i-black test lead iyisigxobo sika-S futhi i-red test lead ixhunywe ku-D pole. Ngenxa yezimo ezihlukene zokuhlola, inani le-RDS(livuliwe) elilinganiselwe lingaphezulu kwenani elivamile elinikezwe kumanuwali.

MayelanaI-MOSFET

I-transistor inesiteshi sohlobo lwe-N ngakho sibizwa nge-N-channelI-MOSFET, nomaI-NMOS. I-P-channel MOS (PMOS) FET nayo ikhona, okuyi-PMOSFET eyakhiwe i-N-type BACKGATE ene-doped kancane kanye nomthombo wohlobo lwe-P kanye nokukhipha amanzi.

Ngaphandle kohlobo lwe-N noma i-P-type MOSFET, umgomo wayo wokusebenza uyafana. I-MOSFET ilawula amandla amanje lapho kuphuma khona umshini wokukhipha amandla ngogesi osetshenziswa esangweni letheminali yokufaka. I-MOSFET iyithuluzi elilawulwa yi-voltage. Ilawula izici zedivayisi ngokusebenzisa i-voltage esetshenziswa esangweni. Akubangeli umphumela wokushaja wokugcina obangelwa isisekelo samanje lapho i-transistor isetshenziselwa ukushintsha. Ngakho-ke, ekushintsheni izinhlelo zokusebenza,Ama-MOSFETkufanele ishintshe ngokushesha kunama-transistors.

I-FET futhi ithola igama layo eqinisweni lokuthi okokufaka kwayo (okubizwa ngokuthi isango) kuthinta amandla amanje agelezayo ku-transistor ngokuveza inkambu kagesi kungqimba olubamba ukushisa. Eqinisweni, akukho okwamanje okugeleza kulesi sivikelo, ngakho-ke i-GATE yamanje yeshubhu ye-FET incane kakhulu.

I-FET ejwayeleke kakhulu isebenzisa ungqimba oluncane lwe-silicon dioxide njengesivikeli esingaphansi kwe-GATE.

Lolu hlobo lwe-transistor lubizwa nge-metal oxide semiconductor (MOS) transistor, noma, i-metal oxide semiconductor field effect transistor (MOSFET). Ngenxa yokuthi ama-MOSFET mancane futhi asebenza kahle kakhulu, athathe indawo yama-bipolar transistors ezinhlelweni eziningi.