Qonda umgomo wokusebenza we-MOSFET futhi usebenzise izingxenye ze-elekthronikhi ngokuyimpumelelo kakhudlwana

Ukuqonda izimiso zokusebenza kwama-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistors) kubalulekile ukuze kusetshenziswe lezi zingxenye ze-elekthronikhi ezisebenza kahle kakhulu. Ama-MOSFET ayizici ezibalulekile kumishini kagesi, futhi ukuwaqonda kubalulekile kubakhiqizi.

Empeleni, kukhona abakhiqizi abangase bangayithokozeli ngokugcwele imisebenzi ethile yama-MOSFET phakathi nesicelo sabo. Noma kunjalo, ngokubamba izimiso zokusebenza zama-MOSFET emishinini kagesi nasezindimeni ezihambisana nazo, umuntu angakhetha ngendlela ehlelekile i-MOSFET efaneleke kakhulu, ecabangela izici zayo eziyingqayizivele kanye nezici ezithile zomkhiqizo. Le ndlela ithuthukisa ukusebenza komkhiqizo, iqinise ukuncintisana kwawo emakethe.

WINSOK SOT-23-3 iphakheji MOSFET

Izimiso Zokusebenza ze-MOSFET

Lapho i-voltage yomthombo wesango (i-VGS) ye-MOSFET inguziro, ngisho nalapho kusetshenziswa i-drain-source voltage (VDS), kuhlale kukhona ukuhlangana kwe-PN ngokuchema okuhlanekezela, okuholela kungabikho siteshi sokuqhuba (futhi kungabikho okwamanje) phakathi umsele kanye nomthombo we-MOSFET. Kulesi simo, i-drain current (ID) ye-MOSFET inguziro. Ukusebenzisa i-voltage ephozithivu phakathi kwesango nomthombo (VGS > 0) kwakha inkambu kagesi kungqimba oluvikelayo lwe-SiO2 phakathi kwesango le-MOSFET ne-silicon substrate, eqondiswe ukusuka esangweni ukuya ku-P-type silicon substrate. Njengoba kunikezwe ukuthi ungqimba lwe-oxide luyavikela, i-voltage esetshenziswa esangweni, i-VGS, ayikwazi ukukhiqiza i-current ku-MOSFET. Kunalokho, yenza i-capacitor ngaphesheya kongqimba lwe-oxide.

Njengoba i-VGS ikhula kancane kancane, i-capacitor iyashaja, idale insimu kagesi. Ekhangwe i-voltage ephozithivu esangweni, ama-electron amaningi anqwabelana ngakolunye uhlangothi lwe-capacitor, enze umgudu wokuhambisa owuhlobo lwe-N osuka ku-drain ukuya emthonjeni ku-MOSFET. Uma i-VGS idlula i-threshold voltage VT (imvamisa eseduze no-2V), isiteshi se-N se-MOSFET siyaqhuba, siqalise ukugeleza kwe-ID yamanje yokukhipha amanzi. I-voltage yomthombo wesango lapho isiteshi siqala ukwakha ibizwa ngokuthi i-threshold voltage VT. Ngokulawula ubukhulu be-VGS, futhi ngenxa yalokho indawo kagesi, usayizi we-ID yamanje yokukhipha amanzi ku-MOSFET bungashintshwa.

WINSOK DFN5x6-8 iphakheji MOSFET

Izicelo ze-MOSFET

I-MOSFET idume ngezici zayo ezinhle kakhulu zokushintsha, okuholela ekusebenziseni kwayo kabanzi kumasekethe adinga ukushintshwa kwe-elekthronikhi, njengamandla kagesi wemodi yokushintsha. Ezinhlelweni ezine-voltage ephansi ezisebenzisa amandla kagesi angu-5V, ukusetshenziswa kwezakhiwo zendabuko kubangela ukwehla kwamandla kagesi ku-base-emitter ye-bipolar junction transistor (cishe u-0.7V), okushiya kuphela i-4.3V yevoltheji yokugcina esetshenziswa esangweni likagesi. i-MOSFET. Ezimweni ezinjalo, ukukhetha i-MOSFET enamandla kagesi wesango elingu-4.5V kwethula ubungozi obuthile. Le nselelo iphinda ibonakale ezinhlelweni ezibandakanya i-3V noma ezinye izinsiza zamandla aphansi.