I-MOSFET Yamanje Ebambe Isicelo Sokwenziwa Kwesekethe

Isekethe ephethe i-MOSFET ehlanganisa ukumelana ne-R1-R6, i-electrolytic capacitor C1-C3, i-capacitor C4, i-PNP triode VD1, i-diode D1-D2, i-intermediate relay K1, isiqhathaniso se-voltage, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556, kanye ne-MOSFET Q1, enophini ongu-6 we-dual time base edidiyelwe chip NE556 esebenza njengokufakwa kwesiginali, kanye nesiphetho esisodwa ye-resistor R1 exhunywe ngesikhathi esifanayo ku-Pin 6 ye-dual-time base base integrated chip NE556 isetshenziswa njengokufakwa kwesignali, umkhawulo owodwa we-resistor R1 uxhunywe ku-pin 14 we-dual-time base base integrated chip NE556, isiphetho esisodwa. ye-resistor R2, enye ingxenye ye-resistor R4, i-emitter ye-PNP transistor VD1, i-drain ye-MOSFET Q1, kanye ne-DC power supply, kanye nolunye uhlangothi lwe- i-resistor R1 ixhunywe kuphinikhodi engu-1 ye-chip edidiyelwe yesisekelo sesikhathi esikabili i-NE556, iphinikhodi 2 ye-chip edidiyelwe yesikhathi esikabili NE556, amandla e-electrolytic aqondile we-capacitor C1, kanye ne-relay emaphakathi. I-K1 ivamise ukuvala othintana naye u-K1-1, omunye umkhawulo we-intermediate relay K1 uvamise ukuvala othintana naye u-K1-1, isigxobo esinegethivu se-electrolytic capacitor C1 kanye nokuphela kwe-capacitor C3 kuxhunywe endaweni yokuphakelwa kwamandla, enye ingxenye ye-capacitor C3 ixhunywe kuphinikhodi 3 ye-chip ehlanganisiwe yesisekelo sesikhathi esikabili NE556, iphinikhodi 4 ye-dual time base ehlanganisiwe ye-chip NE556 ixhunywe kokuphozithivu. isigxobo se-electrolytic capacitor C2 kanye nesinye isiphetho se-resistor R2 ngesikhathi esifanayo, kanye nesigxobo esinegethivu se-electrolytic capacitor C2 sixhunywe endaweni yokunikeza amandla, futhi isigxobo esinegethivu se-electrolytic capacitor C2 sixhunywe endaweni yokuphakela amandla. Isigxobo esinegethivu se-C2 sixhunywe endaweni okuphakelwa kuyo amandla, iphinikhodi 5 ye-dual time base edidiyelwe chip NE556 ixhunywe ekugcineni kwe-resistor R3, enye ingxenye ye-resistor R3 ixhunywe ekufakweni kwesigaba esihle sesiqhathanisi samandla kagesi. , okokufaka kwesigaba esingalungile sesiqhathanisi se-voltage sixhunywe esigxotsheni esihle se-diode D1 kanye nesinye isiphetho se-resistor R4 ngesikhathi esifanayo, isigxobo esingalungile se-diode D1 sixhunywe emandleni. indawo yokuhlinzeka, kanye nokuphumayo kwesiqhathanisi se-voltage kuxhunywe ekugcineni kwe-resistor R5, enye iphetho ye-resistor R5 ixhunywe ku-PNP triplex. Ukukhishwa kwe-voltage comparator kuxhunywe ekugcineni kwe-resistor R5, enye ingxenye ye-resistor R5 ixhunywe esisekelweni se-PNP transistor VD1, umqoqi we-PNP transistor VD1 uxhunywe esigxotsheni esihle se-diode. I-D2, isigxobo esingalungile se-diode D2 sixhunywe ekupheleni kwe-resistor R6, ekupheleni kwe-capacitor C4, kanye nesango le-MOSFET ngesikhathi esifanayo. isikhathi, omunye umkhawulo we-resistor u-R6, omunye umkhawulo we-capacitor C4, kanye nolunye umkhawulo we-intermediate relay K1 zonke zixhunywe kumhlaba wokuphakelwa kwamandla kanti omunye umkhawulo we-intermediate relay K1 uxhunywe emthonjeni umthombo weI-MOSFET.

Umjikelezo wokugcina we-MOSFET, lapho u-A ehlinzeka ngesignali ye-trigger ephansi, ngalesi sikhathi isethi yesikhathi esikabili isisekelo esihlanganisiwe se-chip NE556, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 pin 5 izinga eliphezulu lokukhiphayo, izinga eliphezulu ekufakweni kwesigaba esihle sesiqhathanisi samandla kagesi, okungekuhle. okokufaka kwesigaba sesiqhathanisi se-voltage nge-resistor R4 kanye ne-diode D1 ukuhlinzeka nge-voltage eyireferensi, ngalesi sikhathi, izinga eliphezulu lokukhipha isiqhathanisi samandla, izinga eliphezulu ukwenza I-Triode VD1 iyaqhuba, yamanje egeleza isuka kumqoqi we-triode VD1 charges capacitor C4 ngokusebenzisa i-diode D2, futhi ngesikhathi esifanayo, i-MOSFET Q1 iqhuba, ngalesi sikhathi, ikhoyili ye-intermediate relay K1 iyamuncwa, futhi ukudluliselwa okuphakathi kwe-K1 kuvame. othintana naye ovaliwe u-K 1-1 unqanyuliwe, futhi ngemva kokudluliselwa okuphakathi kwe-K1 ngokuvamile kuvalwe othintana naye u-K 1-1 inqanyuliwe, ugesi we-DC oya ezinyaweni ezingu-1 nezingu-2 ze-chip ehlanganisiwe ye-dual-time base i-NE556 inikeza amandla kagesi okuhlinzeka agcinwe kuze kube yilapho i-voltage ekuphini 1 kanye nophini 2 we-chip ehlanganisiwe yesikhathi esikabili NE556 ishajwa ku-2/ I-3 ye-voltage yokuhlinzeka, i-chip ehlanganisiwe yesikhathi esikabili i-NE556 isethwa kabusha ngokuzenzakalelayo, futhi iphinikhodi engu-5 ye-dual-time base base integrated chip NE556 ibuyiselwa ku- izinga eliphansi, futhi amasekethe alandelayo awasebenzi, kuyilapho ngalesi sikhathi, i-capacitor C4 ikhishwa ukuze kugcinwe ukuqhuba kwe-MOSFET Q1 kuze kube sekupheleni kokukhishwa kwe-C4 ye-capacitance kanye nokukhululwa kwekhoyili ye-relay K1 ephakathi, i-intermediate relay K1 ngokuvamile ivaliwe ukuxhumana. I-K 11 ivaliwe, ngalesi sikhathi ngokusebenzisa i-relay ephakathi evaliwe i-K1 ngokuvamile ivaliwe othintana naye u-K 1-1 izoba yi-chip ehlanganisiwe yesikhathi esikabili. I-NE556 unyawo olu-1 kanye namafithi angu-2 okukhishwa kwamandla kagesi, ngesikhathi esilandelayo ku-chip ehlanganisiwe ye-chip NE556 pin 6 ukuze kuhlinzekwe isignali ye-trigger ephansi yokwenza isisekelo sesikhathi esikabili i-chip NE556 isethwe ukuze ilungiselelwe.

Isakhiwo sesifunda salolu hlelo lokusebenza silula futhi siyinoveli, lapho isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 pin 1 kanye nephinikhodi engu-2 ishaja ku-2/3 we-voltage yokuhlinzeka, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 singasethwa kabusha ngokuzenzakalelayo, isisekelo sesikhathi esikabili esihlanganisiwe se-chip. I-NE556 pin 5 ibuyela ngokuzenzakalelayo ezingeni eliphansi, ukuze amasekethe alandelayo angasebenzi, ukuze amise ngokuzenzakalelayo ukushaja i-capacitor C4, nangemva kwalokho. ukumisa ukushaja kwe-capacitor C4 egcinwe yi-MOSFET Q1 conductive, lolu hlelo lokusebenza lungagcina ngokuqhubekayoI-MOSFETI-Q1 conductive imizuzwana emi-3.

Kuhlanganisa resistors R1-R6, electrolytic capacitor C1-C3, capacitor C4, PNP transistor VD1, diode D1-D2, intermediate relay K1, voltage comparator, isisekelo esikabili base chip edidiyelwe NE556 kanye MOSFET Q1, pin 6 yesisekelo sesikhathi esikabili edidiyelwe. I-chip NE556 isetshenziswa njengokufakwa kwesiginali, futhi umkhawulo owodwa we-resistor R1 uxhumeke kuphini I-14 ye-dual time base edidiyelwe chip NE556, resistor R2, iphinikhodi 14 ye-dual time base edidiyelwe chip NE556 kanye nephinikhodi 14 ye-dual time base edidiyelwe chip NE556, kanye ne-resistor R2 ixhunywe kuphinikhodi engu-14 ye-chip ehlanganisiwe yesisekelo sesikhathi esikabili. NE556. iphinikhodi engu-14 ye-dual-time base integrated chip NE556, umkhawulo owodwa we-resistor R2, umkhawulo owodwa we-resistor R4, i-PNP transistor

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Lapho u-A enikeza isignali ye-trigger ephansi, bese kuba isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 pin 5 izinga eliphezulu lokukhiphayo, izinga eliphezulu ekufakweni kwesigaba esihle sesiqhathanisi samandla kagesi, okokufaka kwesigaba esingesihle i-voltage comparator yi-resistor R4 kanye ne-diode D1 ukuhlinzeka nge-voltage yereferensi, kulokhu, izinga eliphezulu lokuphuma kwe-voltage comparator, izinga eliphezulu le-transistor VD1 conduction, yamanje igeleza isuka kumqoqi we-transistor VD1 idlule ku-diode D2 iye ku-capacitor C4 eshajayo, ngalesi sikhathi, ukumuncwa kwekhoyili edluliselwe phakathi kwe-K1, ukumuncwa kwekhoyili ephakathi kwe-K1. Ukugeleza kwamanje kusuka kumqoqi we-transistor VD1 kukhokhiswa ku-capacitor C4 nge-diode D2, futhi ngesikhathi esifanayo,I-MOSFETI-Q1 iqhuba, ngalesi sikhathi, ikhoyili ye-intermediate relay K1 iyamuncwa, futhi i-intermediate relay K1 othintana naye ovalekile ngokuvamile u-K 1-1 uyanqanyulwa, futhi ngemva kokudluliselwa okuphakathi kwe-K1 othintana naye ovalekile u-K 1-1 uyanqanyulwa, amandla amandla kagesi ahlinzekwe ngumthombo wamandla we-DC kumafidi angu-1 no-2 we-dual timebase edidiyelwe chip NE556 igcinwa kuze kube yilapho i-voltage iku-pin I-1 kanye nephinikhodi engu-2 ye-chip ehlanganisiwe yesikhathi esikabili i-NE556 ishajwa ku-2/3 we-voltage yokuhlinzeka, i-chip ehlanganisiwe yesikhathi esikabili i-NE556 isethwa kabusha ngokuzenzakalelayo, futhi iphinikhodi engu-5 ye-dual-time base base chip NE556 izenzekela. ibuyiselwe ezingeni eliphansi, futhi ama-circuits alandelayo awasebenzi, futhi ngalesi sikhathi, i-capacitor C4 ikhishwa ukuze kugcinwe ukuqhutshwa kwe-MOSFET Q1. kuze kube sekupheleni kokukhishwa kwe-capacitor C4, kanye nekhoyili ye-intermediate relay K1 ikhishwa, futhi i-intermediate relay K1 ngokuvamile ivaliwe ukuxhumana K 1-1 kuyanqanyulwa. I-Relay K1 ngokuvamile ivaliwe othintana naye u-K 1-1 uvaliwe, kulokhu ngokusebenzisa i-relay ephakathi evaliwe i-K1 othintana naye ngokuvamile ovaliwe u-K 1-1 uzoba isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 1 izinyawo namamitha angu-2 ekukhululweni kwamandla kagesi, ngokuzayo i-chip edidiyelwe yesikhathi esikabili i-NE556 pin 6 ukuze inikeze isignali yokuqalisa ukuze ihlale phansi, ukuze kwenziwe amalungiselelo esethi ehlanganisiwe yesisekelo sesikhathi esikabili ye-chip NE556.