Indlela yokukhiqiza yamandla aphezulu wokushayela we-MOSFET

Kunezixazululo ezimbili eziyinhloko:

Enye iwukusebenzisa i-chip yomshayeli ozinikele ukushayela i-MOSFET, noma ukusetshenziswa kwama-photocouplers asheshayo, ama-transistors akha isekethe yokushayela i-MOSFET, kodwa uhlobo lokuqala lwendlela ludinga ukuhlinzekwa kwamandla azimele; Olunye uhlobo lwe-pulse transformer ukushayela i-MOSFET, futhi kumjikelezo we-pulse drive, ukuthi ungayithuthukisa kanjani imvamisa yokushintsha yesekethe yedrayivu ukwandisa umthamo wokushayela, ngangokunokwenzeka, ukunciphisa inani lezingxenye, isidingo esiphuthumayo. ukuxazulula iIzinkinga zamanje.

Uhlobo lokuqala lwesikimu sokushayela, ibhuloho lesigamu lidinga amandla amabili azimele; ibhuloho eligcwele lidinga ukunikezwa kwamandla okuzimele okuthathu, kokubili ibhuloho elinguhhafu kanye nebhuloho eligcwele, izingxenye eziningi kakhulu, ezingahambisani nokwehliswa kwezindleko.

Uhlobo lwesibili lohlelo lokushayela, kanye nelungelo lobunikazi ubuciko obuseduze kakhulu begama lokusungulwa "amandla aphezuluI-MOSFET drive circuit" patent (inombolo yesicelo 200720309534. 8), ilungelo lobunikazi lengeza kuphela ukumelana nokukhishwa ukuze kukhululwe umthombo wesango wokushajwa kwamandla aphezulu we-MOSFET, ukufeza inhloso yokuvala shaqa, unqenqema oluwayo lwesignali ye-PWM lukhulu. onqenqemeni oluwayo lwesignali ye-PWM lukhulu, okuzoholela ekuvaleni kancane kwe-MOSFET, ukulahlekelwa kwamandla kukhulu kakhulu;

Ngaphezu kwalokho, uhlelo lwe-patent umsebenzi we-MOSFET usengozini yokuphazamiseka, futhi i-chip yokulawula ye-PWM idinga ukuba namandla amakhulu okukhiphayo, okwenza izinga lokushisa le-chip libe phezulu, okuthinta impilo yesevisi ye-chip. Okuqukethwe kokusunguliwe Inhloso yale modeli yokusetshenziswa ukuhlinzeka ngesekethe yedrayivu ye-MOSFET enamandla amakhulu, ukusebenza uzinze kakhudlwana futhi uziro ukuze kuzuzwe inhloso yalesi sixazululo sobuchwepheshe sokusungulwa kwemodeli yensiza - isekethe yedrayivu ye-MOSFET enamandla amakhulu, ukuphuma kwesiginali i-PWM control chip ixhunywe ku-primary pulse transformer, i umphumela wokuqala of i-transformer yesibili ye-pulse ixhunywe esangweni lokuqala le-MOSFET, ukuphuma kwesibili kwe-pulse transformer yesibili kuxhunywe esangweni lokuqala le-MOSFET, ukuphuma kwesibili kwe-transformer yesibili ye-pulse kuxhunywe esangweni lokuqala le-MOSFET. Ukukhishwa kokuqala kwe-pulse transformer secondary kuxhunywe esangweni le-MOSFET yokuqala, ukuphuma kwesibili kwe-pulse transformer secondary kuxhunywe esangweni le-MOSFET yesibili, ebonakala ngokuthi ukuphuma kokuqala kwe-pulse transformer secondary nakho kuxhunyiwe. ku-transistor yokuqala yokukhishwa, futhi ukukhishwa kwesibili kwe-pulse transformer yesibili nakho kuxhunywe ku-transistor yesibili yokukhishwa. Uhlangothi oluyinhloko lwe-pulse transformer nalo luxhunywe endaweni yokugcina amandla kanye nokukhulula isifunda.

Isifunda sokukhishwa kwesitoreji samandla sihlanganisa i-resistor, i-capacitor ne-diode, i-resistor kanye ne-capacitor ixhunywe ngokuhambisana, futhi isifunda esihambisanayo esishiwo ngenhla sixhunywe ochungechungeni nge-diode. Imodeli yokusetshenziswa inomphumela onenzuzo Imodeli yokusetshenziswa nayo ine-transistor yokuqala yokukhipha exhunywe ekuphumeni kokuqala kwe-transistor yesibili, kanye ne-transistor yokukhipha yesibili exhunywe ekuphumeni kwesibili kwe-pulse transformer, ukuze kuthi lapho i-pulse transformer ikhipha okuphansi. izinga, i-MOSFET yokuqala kanye ne-MOSFET yesibili ingakhishwa ngokushesha ukuze kuthuthukiswe isivinini sokuvala i-MOSFET, nokunciphisa ukulahlekelwa kwe-MOSFET.Isiginali yokulawula i-PWM I-chip ixhunywe ku-MOSFET yokukhulisa isignali phakathi kokuphumayo okuyinhloko kanye ne-pulse transformer primary, engasetshenziselwa ukukhulisa isignali. Ukukhishwa kwesiginali ye-chip yokulawula ye-PWM kanye ne-primary pulse transformer kuxhunywe ku-MOSFET ukuze kukhuliswe isignali, okungase kuthuthukise ikhono lokushayela lesignali ye-PWM.

I-primary pulse transformer iphinde ixhunywe kumjikelezo wokukhululwa kwesitoreji samandla, lapho isignali ye-PWM isezingeni eliphansi, isifunda sokukhishwa kwesitoreji samandla sikhulula amandla agcinwe ku-pulse transformer lapho i-PWM isezingeni eliphezulu, iqinisekisa ukuthi isango. umthombo we-MOSFET yokuqala kanye ne-MOSFET yesibili iphansi kakhulu, edlala indima ekuvimbeleni ukuphazamiseka.

Ekusetshenzisweni okuthile, i-MOSFET Q1 enamandla aphansi yokukhulisa isignali ixhunywe phakathi kwesiginali ephumayo yesiginali A ye-PWM control chip kanye nesisekelo se-pulse transformer Tl, i-terminal yokuqala yokukhipha yesibili ye-pulse transformer ixhunywe ku-. isango le-MOSFET Q4 yokuqala nge-diode D1 kanye ne-resistor yokushayela i-Rl, ukuphela kwesibili okuphumayo kwesibili se-pulse transformer kuxhunywe esangweni le-MOSFET Q5 yesibili. nge-diode D2 kanye ne-resistor yokushayela engu-R2, kanye nesiphetho sokuqala esiphumayo sesibili se-pulse transformer siphinde sixhunywe ku-drain triode Q2 yokuqala, kanti i-drain triode yesibili i-Q3 nayo ixhunywe ku-drain triode yesibili Q3. I-MOSFET Q5, i-terminal yokuqala yokuphuma kwe-pulse transformer secondary nayo ixhunywe ku-drain transistor Q2 yokuqala, kanti i-terminal ephumayo yesibili ye-pulse transformer secondary nayo ixhunywe ku-drain transistor Q3 yesibili.

Isango le-MOSFET Q4 yokuqala lixhunywe ku-drain resistor R3, kanti isango le-MOSFET Q5 yesibili lixhunywe ku-drain resistor R4. i-primary ye-pulse transformer Tl iphinde ixhunywe endaweni yokugcina amandla kanye nokukhulula isekethe, kanti indawo yokugcina amandla kanye nesekethe yokukhulula ihlanganisa i-resistor R5, i-capacitor Cl, ne-diode D3, kanye ne-resistor R5 kanye ne-capacitor Cl kuxhunywe kuyo. parallel, futhi isekethe ehambisanayo eshiwo ngenhla ixhunywe ochungechungeni nge-diode D3. okukhipha isignali ye-PWM ku-chip yokulawula ye-PWM ixhunywe ku-MOSFET Q2 yamandla aphansi, futhi i-MOSFET Q2 enamandla aphansi ixhunywe kwesesibili se-pulse transformer. ikhuliswa ngamandla aphansi i-MOSFET Ql kanye nokuphumayo kuya kwesisekelo se-pulse transformer Tl. Uma isignali ye-PWM iphezulu, itheminali yokuqala yokukhipha kanye netheminali yesibili yokuphumayo yesibili ye-pulse transformer Tl ekhipha amasiginali wezinga eliphezulu ukushayela i-MOSFET Q4 yokuqala neyesibili i-MOSFET Q5 ukuze iqhube.

Lapho isignali ye-PWM iphansi, okukhiphayo kokuqala kanye nokuphumayo kwesibili kwe-pulse transformer Tl okuphumayo kwesibili okuphumayo amasignali ezinga eliphansi, i-drain transistor Q2 yokuqala kanye ne-drain transistor Q3 conduction yesibili, isango lokuqala le-MOSFETQ4 lomthombo wamandla ngokusebenzisa i-drain resistor R3, i-drain transistor Q2 yokuqala yokukhipha, eyesibili i-MOSFETQ5 isango lomthombo wamandla nge-drain resistor R4, eyesibili i-drain transistor Q3 ye ukukhishwa, isango lesibili le-MOSFETQ5 amandla omthombo wesango ngokusebenzisa i-drain resistor R4, i-drain transistor Q3 yesibili yokukhipha, isango lesibili le-MOSFETQ5 amandla omthombo wesango nge-drain resistor R4, i-drain transistor Q3 yesibili ukuze ikhishwe. Eyesibili i-MOSFETQ5 isango lomthombo we-capacitance ikhishwa nge-drain resistor R4 kanye neyesibili i-drain transistor Q3, ukuze i-MOSFET Q4 yokuqala ne-MOSFET Q5 yesibili ingavalwa ngokushesha futhi ukulahlekelwa kwamandla kungancishiswa.

Uma isignali ye-PWM iphansi, isifunda sokukhishwa kwamandla agciniwe esakhiwe i-resistor R5, i-capacitor Cl ne-diode D3 ikhulula amandla agcinwe ku-pulse transformer lapho i-PWM iphezulu, iqinisekisa ukuthi umthombo wesango we-MOSFET Q4 yokuqala kanye ne-MOSFET yesibili. I-Q5 iphansi kakhulu, esebenza inhloso yokulwa nokuphazamiseka. I-Diode Dl ne-diode D2 yenza okukhiphayo okwamanje ngokungahambisani, ngaleyo ndlela iqinisekise ikhwalithi ye-waveform ye-PWM, futhi ngesikhathi esifanayo, iphinde idlale indima yokulwa nokuphazamiseka ngezinga elithile.