(1) Umthelela wokulawula we-vGS ku-ID nesiteshi
① Ikesi le-vGS=0
Kungabonakala ukuthi kukhona ukuhlangana kwe-PN okubuyela emuva kuya emuva phakathi kwe-drain d kanye ne-source s yemodi yokuthuthukisa.I-MOSFET.
Lapho i-voltage yomthombo wesango i-vGS=0, ngisho noma i-voltage ye-drain-source vDS yengezwa, futhi kungakhathaliseki ukuthi i-polarity ye-vDS, kuhlale kukhona ukuhlangana kwe-PN esimweni sokuhlehla okuchemile.Awukho umzila ohambisa amanzi phakathi komsele nomthombo, ngakho-ke khipha i-ID≈0 yamanje ngalesi sikhathi.
② Icala le-vGS>0
Uma i-vGS>0, inkambu kagesi ikhiqizwa ungqimba oluvikelayo lwe-SiO2 phakathi kwesango ne-substrate.Isiqondiso senkambu kagesi i-perpendicular ensimini kagesi eqondiswa kusukela esangweni kuya ku-substrate endaweni ye-semiconductor.Le nkundla kagesi ixosha izimbobo futhi ihehe ama-electron.Izimbobo ezixoshayo: Izimbobo ku-substrate yohlobo lwe-P eduze kwesango ziyaxoshwa, zishiya ama-ion amukelayo anganyakazi (ama-ion angalungile) ukuze akhe ungqimba lokuncipha.Khanga ama-electron: Ama-electron (abathwali abambalwa) ku-substrate yohlobo lwe-P akhangwa endaweni engaphansi.
(2) Ukwakhiwa kweshaneli yokuhambisa:
Uma inani le-vGS lilincane futhi ikhono lokuheha ama-electron lingaqinile, akukabi bikho isiteshi sokuqondisa phakathi kwe-drain kanye nomthombo.Njengoba i-vGS ikhula, ama-electron amaningi akhangwa ungqimba olungaphezulu lwe-P substrate.Uma i-vGS ifinyelela inani elithile, lawa ma-electron enza ungqimba oluncane lwe-N ebusweni be-substrate engu-P eduze kwesango futhi axhunywe ezifundeni ezimbili ze-N+, enza umzila ohambayo wohlobo lwe-N phakathi kwe-drain kanye nomthombo.Uhlobo lwayo lwe-conductivity luphambene nalolo lwe-P substrate, ngakho lubizwa nangokuthi ungqimba oluguquguqukayo.I-vGS enkulu iwukuthi, lapho inkambu kagesi esebenza endaweni ye-semiconductor inamandla, ama-electron amaningi akhangwa ngaphezu kwe-P substrate, ukuqina kwesiteshi se-conductive, futhi kuncane ukumelana nesiteshi.I-voltage yomthombo wesango lapho isiteshi siqala ukwakha ibizwa ngokuthi i-turn-on voltage, emelelwa yi-VT.
IIsiteshi se-N I-MOSFETokuxoxwe ngakho ngenhla akukwazi ukwenza isiteshi sokuqhuba uma i-vGS < VT, futhi ishubhu isesimweni sokunqanyulwa.Kuphela uma i-vGS≥VT ingakhiwa isiteshi.Lolu hloboI-MOSFETokufanele yakhe ishaneli yokuqondisa lapho i-vGS≥VT ibizwa ngokuthi imodi yokuthuthukisaI-MOSFET.Ngemva kokwakhiwa kwesiteshi, i-drain current ikhiqizwa lapho i-voltage eya phambili i-vDS isetshenziswa phakathi kwe-drain kanye nomthombo.Umthelela we-vDS ku-ID, uma i-vGS>VT futhi iyivelu ethile, umthelela we-drain-source voltage vDS esiteshini sokuqhuba kanye ne-ID yamanje ifana naleyo ye-transistor yomphumela wenkundla yesiphambano.Ukwehla kwamandla kagesi okukhiqizwa yi-ID yamanje yokudonsa eduze kwesiteshi kwenza amandla ogesi phakathi kwephoyinti ngalinye esiteshini nesango angabe esalingana.I-voltage ekugcineni eduze komthombo inkulu kakhulu, lapho isiteshi sishubile kakhulu.I-voltage ekugcineni kwe-drain incane kakhulu, futhi inani layo lingu-VGD=vGS-vDS, ngakho isiteshi yisona esincanyana kakhulu lapha.Kodwa uma i-vDS incane (vDS
Isikhathi sokuthumela: Nov-12-2023
