(1) Umthelela wokulawula we-vGS ku-ID nesiteshi
① Ikesi le-vGS=0
Kungabonakala ukuthi kukhona ukuhlangana kwe-PN okubuyela emuva kuya emuva phakathi kwe-drain d kanye ne-source s yemodi yokuthuthukisa.I-MOSFET.
Lapho i-voltage yomthombo wesango i-vGS=0, ngisho noma i-voltage ye-drain-source vDS yengezwa, futhi kungakhathaliseki ukuthi i-polarity ye-vDS, kuhlale kukhona ukuhlangana kwe-PN esimweni sokuhlehla okuchemile. Awukho umzila ohambisa amanzi phakathi komsele nomthombo, ngakho-ke khipha i-ID≈0 yamanje ngalesi sikhathi.
② Icala le-vGS>0
Uma i-vGS>0, inkambu kagesi ikhiqizwa ungqimba oluvikelayo lwe-SiO2 phakathi kwesango ne-substrate. Isiqondiso senkambu kagesi i-perpendicular ensimini kagesi eqondiswa kusukela esangweni kuya ku-substrate endaweni ye-semiconductor. Le nkundla kagesi ixosha izimbobo futhi ihehe ama-electron. Izimbobo ezixoshayo: Izimbobo ku-substrate yohlobo lwe-P eduze kwesango ziyaxoshwa, zishiya ama-ion amukelayo anganyakazi (ama-ion angalungile) ukuze akhe ungqimba lokuncipha. Khanga ama-electron: Ama-electron (abathwali abambalwa) ku-substrate yohlobo lwe-P akhangwa endaweni engaphansi.
(2) Ukwakhiwa kwesiteshi sokuhambisa:
Uma inani le-vGS lilincane futhi ikhono lokuheha ama-electron lingaqinile, akukabi bikho ishaneli yokuqondisa phakathi kwe-drain kanye nomthombo. Njengoba i-vGS ikhula, ama-electron amaningi akhangwa ungqimba olungaphezulu lwe-P substrate. Uma i-vGS ifinyelela inani elithile, lawa ma-electron enza ungqimba oluncane lwe-N ebusweni be-substrate engu-P eduze kwesango futhi axhunywe ezifundeni ezimbili ze-N+, enza umzila ohambayo wohlobo lwe-N phakathi kwe-drain kanye nomthombo. Uhlobo lwayo lwe-conductivity luphambene nalolo lwe-P substrate, ngakho lubizwa nangokuthi ungqimba oluguquguqukayo. I-vGS enkulu iwukuthi, lapho inkambu kagesi esebenza endaweni ye-semiconductor inamandla, ama-electron amaningi akhangwa ngaphezu kwe-P substrate, ukuqina kwesiteshi se-conductive, futhi kuncane ukumelana nesiteshi. I-voltage yomthombo wesango lapho isiteshi siqala ukwakha ibizwa ngokuthi i-turn-on voltage, emelelwa yi-VT.
IIsiteshi se-N I-MOSFETokuxoxwe ngakho ngenhla akukwazi ukwenza isiteshi sokuqhuba uma i-vGS < VT, futhi ishubhu isesimweni sokunqanyulwa. Kuphela uma i-vGS≥VT ingakhiwa isiteshi. Lolu hloboI-MOSFETokufanele yakhe ishaneli yokuqondisa lapho i-vGS≥VT ibizwa ngokuthi imodi yokuthuthukisaI-MOSFET. Ngemva kokwakhiwa kwesiteshi, i-drain current ikhiqizwa lapho i-voltage eya phambili i-vDS isetshenziswa phakathi kwe-drain kanye nomthombo. Umthelela we-vDS ku-ID, uma i-vGS>VT futhi iyivelu ethile, umthelela we-drain-source voltage vDS esiteshini sokuqhuba kanye ne-ID yamanje ifana naleyo ye-transistor yomphumela wenkundla yesiphambano. Ukwehla kwamandla kagesi okukhiqizwa yi-ID yamanje yokudonsa eduze kwesiteshi kwenza amandla ogesi phakathi kwephoyinti ngalinye esiteshini nesango angabe esalingana. I-voltage ekugcineni eduze komthombo inkulu kakhulu, lapho isiteshi sishubile kakhulu. I-voltage ekugcineni kwe-drain incane kakhulu, futhi inani layo lingu-VGD=vGS-vDS, ngakho isiteshi yisona esincanyana kakhulu lapha. Kodwa uma i-vDS incane (vDS
Isikhathi sokuthumela: Nov-12-2023
