Ama-MOSFET (Metal Oxide Semiconductor Field Effect Transistors) abizwa ngokuthi amadivaysi alawulwa amandla kagesi ikakhulukazi ngenxa yokuthi umgomo wawo wokusebenza uncike kakhulu ekulawuleni amandla kagesi esango (Vgs) phezu kwe-drain current (Id), kunokuthembela kowamanje ukuwulawula, njengoba kunjalo ngama-bipolar transistors (njengama-BJTs). Okulandelayo yincazelo enemininingwane ye-MOSFET njengedivayisi elawulwa yi-voltage:
Isimiso Sokusebenza
Ukulawula Amandla Kagesi:Inhliziyo ye-MOSFET ilele esakhiweni esiphakathi kwesango layo, umthombo nokukhipha amanzi, kanye nongqimba oluvikelayo (ngokuvamile i-silicon dioxide) ngaphansi kwesango. Uma i-voltage isetshenziswa esangweni, inkambu kagesi idalwe ngaphansi kwesendlalelo se-insulating, futhi le nsimu ishintsha ukuqhutshwa kwendawo phakathi komthombo nokukhipha.
Ukwakhiwa Kwesiteshi Esisebenzayo:Kuma-MOSFET esiteshi se-N, lapho i-voltage yesango i-Vgs iphakeme ngokwanele (ngaphezu kwenani elithile elibizwa ngokuthi i-threshold voltage Vt), ama-electron aku-substrate yohlobo lwe-P ngaphansi kwesango akhangwa ngaphansi kwesendlalelo se-insulating, enza i-N- thayipha umzila we-conductive ovumela ukuhamba phakathi komthombo nokukhipha amanzi. Ngokuphambene, uma i-Vgs ingaphansi kune-Vt, isiteshi esiqhubayo asenziwa futhi i-MOSFET inqamukile.
Khipha isilawuli samanje:usayizi we-Id yamanje yokukhipha amanzi ilawulwa kakhulu amandla kagesi wesango i-Vgs. Uma i-Vgs iphakeme, ishaneli yokuqhuba iyakhula, futhi i-ID yamanje yokudonsa iyakhula. Lobu budlelwano buvumela i-MOSFET ukuthi isebenze njengedivayisi yamanje elawulwa yi-voltage.
Piezo Characterization Izinzuzo
Ukuphazamiseka Okuphezulu Kokufaka:I-impedance yokufaka ye-MOSFET iphakeme kakhulu ngenxa yokuhlukaniswa kwesango kanye nesifunda sokukhipha umthombo ngesendlalelo se-insulating, futhi isango lamanje licishe libe ngu-zero, okwenza lisebenziseke kumasekhethi lapho kudingeka khona ukuvinjelwa kokufaka okuphezulu.
Umsindo Ophansi:Ama-MOSFET adala umsindo ophansi uma kuqhathaniswa ngesikhathi sokusebenza, ikakhulukazi ngenxa ye-impedance yawo ephezulu yokufaka kanye ne-unipolar carrier conduction mechanism.
Isivinini sokushintsha ngokushesha:Njengoba ama-MOSFET engamadivayisi alawulwa yi-voltage, isivinini sawo sokushintsha ngokuvamile sishesha kakhulu kunaleso sama-bipolar transistors, okumele adlule inqubo yokushaja nokukhululwa ngesikhathi sokushintsha.
Ukusetshenziswa kwamandla okuphansi:Esimeni, ukumelana nomthombo we-drain (RDS(on)) we-MOSFET kuphansi uma kuqhathaniswa, okusiza ukwehlisa ukusetshenziswa kwamandla. Futhi, esimweni sokunqamuka, ukusetshenziswa kwamandla amile kuphansi kakhulu ngoba isango lamanje licishe libe nguziro.
Kafushane, ama-MOSFET abizwa ngokuthi amadivaysi alawulwa yi-voltage ngoba umgomo wawo wokusebenza uncike kakhulu ekulawuleni ukudonsa kwamanzi nge-voltage yesango. Lesi sici esilawulwa yi-voltage senza ama-MOSFET athembise izinhlelo zokusebenza eziningi kumasekethe e-elekthronikhi, ikakhulukazi lapho kudingeka khona ukuthintana kokufakwayo okuphezulu, umsindo ophansi, isivinini sokushintsha ngokushesha kanye nokusetshenziswa kwamandla aphansi.
Isikhathi sokuthumela: Sep-16-2024
