Uyini umgomo wokusebenza kwe-MOSFET?

Isihloko se-MOSFET (FieldEffect Transistor abbreviation (FET))I-MOSFET. ngenani elincane labathwali ukuze babambe iqhaza ekuphatheni okushisayo, okwaziwa nangokuthi i-multi-pole junction transistor. Ihlukaniswe njengedivayisi ye-semi-superconductor elawulwa yi-voltage. Ukumelana okukhiphayo okukhona kuphezulu (10 ^ 8 ~ 10 ^ 9 Ω), umsindo ophansi, ukusetshenziswa kwamandla okuphansi, ububanzi obuyi-static, kulula ukuhlanganisa, akukho senzakalo sesibili sokuphuka, umsebenzi womshwalense wolwandle olubanzi nezinye izinzuzo, manje usushintshile i-bipolar junction transistor kanye ne-transistor ye-junction yamandla yabahlanganyeli abaqinile.

Izici ze-MOSFET

Okokuqala: I-MOSFET iyithuluzi lokuphatha i-voltage mastering, ngokusebenzisa i-VGS (i-voltage yomthombo wesango) ukuze ibe yinkosi ye-ID (drain DC);

Okwesibili:I-MOSFETi-DC ephumayo incane kakhulu, ngakho ukumelana kwayo kokuphumayo kukhulu kakhulu.

Okuthathu: isetshenziswa abathwali abambalwa ukuqhuba ukushisa, futhi ngaleyo ndlela inesilinganiso esingcono sokuzinza;

Okwesine: kuqukethe indlela encishisiwe yokunciphisa ugesi wama-coefficients amancane ukuze abe mncane kune-transistor iqukethe indlela encishisiwe yokunciphisa ugesi wama-coefficients amancane;

Okwesihlanu: Amandla okukhipha imisebe e-MOSFET;

Isithupha: ngoba awukho umsebenzi oyiphutha wokuhlakazeka kwabancane okubangelwa izinhlayiya ezihlakazekile zomsindo, ngoba umsindo uphansi.

Isimiso somsebenzi we-MOSFET

I-MOSFETisimiso somsebenzi emshweni owodwa, okungukuthi, "drain - source walk through the channel between the ID, with electrode kanye neshaneli phakathi kwe-pn eyakhiwe ibe i-electrode echemile ehlanekezela ugesi ukuze ikwazi kahle i-ID". Ngokunembe kakhudlwana, i-amplitude ye-ID kuyo yonke isekethe, okungukuthi, indawo ephambanayo yesiteshi, ingukuhluka okuphikisayo kwe-pn junction, ukwenzeka kwesendlalelo sokuncipha ukuze kunwetshwe ukuhluka kokuphatha isizathu. Olwandle olungagcwele kakhulu lwe-VGS=0, ukunwetshwa kongqimba olukhonjisiwe lwenguquko akukukhulu kakhulu ngoba, ngokuya ngozibuthe we-VDS owengezwe phakathi komthombo wokukhipha amanzi, amanye ama-electron olwandle oluwumthombo adonswa wumsele. , okungukuthi, kunomsebenzi we-ID ye-DC osuka ku-drain ukuya emthonjeni. Isendlalelo esimaphakathi esinwebeka sisuka esangweni siye emseleni sizokwenza uhlobo lokuvinjwa kwawo wonke umzimba wesiteshi, i-ID egcwele. Bhekisela kule phethini njengokuncinza. Lokhu kufanekisa ukuthi isendlalelo soguquko sivimba sonke isiteshi, futhi akukhona ukuthi i-DC inqanyuliwe.

Kusendlalelo soguquko, ngoba akukho-self-movement yama-electron nezimbobo, ngesimo sangempela sezimpawu zokuvikela ubukhona be-DC jikelele yamanje kunzima ukuhamba. Nokho, inkambu kazibuthe phakathi komsele - umthombo, ekusebenzeni, ungqimba olubili loguquko oluthinta amanzi kanye nesigxobo sesango esingezansi kwesokunxele, ngenxa yokuthi indawo kazibuthe ekhukhulekayo idonsa ama-electron anesivinini esikhulu ngokusebenzisa isendlalelo soguquko. Ngoba amandla kazibuthe okhukhulekayo awashintshi ukugcwala kwesigcawu se-ID. Okwesibili, i-VGS iye endaweni engalungile ishintsha, ukuze i-VGS = VGS (ivaliwe), bese ungqimba olushintshayo lushintsha kakhulu ukuma kokumboza ulwandle lonke. Futhi insimu kazibuthe ye-VDS yengezwe kakhulu kungqimba loguquko, inkambu kazibuthe edonsa i-electron endaweni yokukhukhuleka, inqobo nje uma iseduze nesigxobo somthombo we-short kakhulu konke, okungaphezulu ukuze amandla e-DC ekwazi ukumila.