Njengezinto ezishintshayo, i-MOSFET ne-IGBT zivame ukuvela kumasekethe kagesi. Ziyafana futhi ngokubukeka kanye nemingcele yesici. Ngikholwa ukuthi abantu abaningi bazozibuza ukuthi kungani amanye amasekethe adinga ukusebenzisa i-MOSFET, kanti amanye enza. I-IGBT?
Uyini umehluko phakathi kwabo? Olandelayo,Olukeyuzophendula imibuzo yakho!
Yini aI-MOSFET?
I-MOSFET, igama eligcwele lesiShayina i-metal-oxide semiconductor field effect transistor. Ngenxa yokuthi isango lale transistor yomphumela wensimu lihlukaniswe ungqimba oluvikelayo, libizwa nangokuthi i-insulated gate field effect transistor. I-MOSFET ingahlukaniswa ngezinhlobo ezimbili: "N-uhlobo" kanye "nohlobo lwe-P" ngokusho kwe-polarity "yesiteshi" sayo (isithwali esisebenzayo), ngokuvamile esibizwa nangokuthi i-N MOSFET ne-P MOSFET.
I-MOSFET ngokwayo ine-parasitic diode yayo, esetshenziselwa ukuvimbela i-MOSFET ukuthi ingashi lapho i-VDD i-over-voltage. Ngoba ngaphambi kokuthi u-overvoltage udale umonakalo ku-MOSFET, i-diode ihlehla ngokuhlehla kuqala futhi iqondise umsinga omkhulu phansi, ngaleyo ndlela ivimbele i-MOSFET ukuthi ingashi.
Yini i-IGBT?
I-IGBT (I-Insulated Gate Bipolar Transistor) iyithuluzi elihlanganisiwe le-semiconductor elakhiwe i-transistor ne-MOSFET.
Izimpawu zesifunda ze-IGBT azikahlanganiswa. Lapho udweba umdwebo wohlelo, izimpawu ze-triode ne-MOSFET zivame ukubolekwa. Ngalesi sikhathi, ungahlulela ukuthi ingabe i-IGBT noma i-MOSFET kusukela kumodeli emakwe kumdwebo wohlelo.
Ngesikhathi esifanayo, kufanele futhi unake ukuthi IGBT has a diode umzimba. Uma ingaphawulwanga esithombeni, akusho ukuthi ayikho. Ngaphandle uma idatha esemthethweni isho okuhlukile, le diode ikhona. I-diode yomzimba ngaphakathi kwe-IGBT ayiyona i-parasitic, kodwa imiswe ngokukhethekile ukuze ivikele i-reverse entekenteke yokumelana nomthamo we-IGBT. Ibizwa nangokuthi i-FWD (i-freewheeling diode).
Isakhiwo sangaphakathi salokhu okubili sihlukile
Izigxobo ezintathu ze-MOSFET ziwumthombo (S), umsele (D) kanye nesango (G).
Izigxobo ezintathu ze-IGBT ngumqoqi (C), emitter (E) kanye nesango (G).
I-IGBT yakhiwa ngokwengeza isendlalelo esengeziwe ku-drain ye-MOSFET. Isakhiwo sabo sangaphakathi simi kanje:
Izinkambu zokufaka izicelo zazo zombili zihlukile
Izakhiwo zangaphakathi ze-MOSFET ne-IGBT zihlukile, okunquma izinkambu zabo zokufaka izicelo.
Ngenxa yokwakheka kwe-MOSFET, imvamisa ingafinyelela i-current enkulu, engafinyelela ku-KA, kodwa amandla okumelana ne-voltage adingekayo ayinamandla njenge-IGBT. Izindawo zayo eziyinhloko zokufaka isicelo ukushintshwa kwamandla kagesi, ama-ballasts, ukushisa kwe-high-frequency induction, imishini yokushisela i-high-frequency inverter, izinsiza zikagesi zokuxhumana kanye nezinye izinkambu zokuphakelwa kwamandla aphezulu.
I-IGBT ingakhiqiza amandla amaningi, amanje kanye ne-voltage, kodwa imvamisa ayiphezulu kakhulu. Njengamanje, isivinini sokushintsha kanzima se-IGBT singafinyelela ku-100KHZ. I-IGBT isetshenziswa kakhulu emishinini yokushisela, ama-inverters, ama-frequency converters, i-electroplating electrolytic power supply, ukushisa kwe-ultrasonic induction nezinye izinkambu.
Izici eziyinhloko ze-MOSFET ne-IGBT
I-MOSFET inezici ze-impedance ephezulu yokufaka, isivinini sokushintsha ngokushesha, ukuzinza okuhle kwe-thermal, i-voltage control current, njll. Kumjikelezo, ingasetshenziswa njenge-amplifier, switch kagesi nezinye izinjongo.
Njengohlobo olusha lwedivayisi ye-semiconductor ye-elekthronikhi, i-IGBT inezici ze-impedance ephezulu yokufaka, ukusetshenziswa kwamandla okulawulwa kwamandla kagesi aphansi, isifunda sokulawula esilula, ukumelana nomthamo omkhulu, nokubekezelelana okukhulu kwamanje, futhi isetshenziswe kabanzi kumasekethe ahlukahlukene we-elekthronikhi.
Umjikelezo olinganayo we-IGBT uboniswa esithombeni esingezansi. I-IGBT empeleni iyinhlanganisela ye-MOSFET ne-transistor. I-MOSFET inobubi bokumelana okuphezulu, kodwa i-IGBT iyakunqoba lokhu kushiyeka. I-IGBT isenokumelana okuphansi ku-voltage ephezulu. .
Ngokuvamile, inzuzo ye-MOSFET ukuthi inezici ezinhle ze-high-frequency futhi ingasebenza ngemvamisa yamakhulu e-kHz futhi ifike ku-MHz. Ububi ukuthi i-on-resistance inkulu futhi ukusetshenziswa kwamandla kukhulu ku-high-voltage kanye nezimo eziphezulu zamanje. I-IGBT yenza kahle emazingeni aphansi kanye nezimo zamandla aphezulu, nge-on-resistance encane kanye ne-voltage ephezulu yokumelana.
Khetha i-MOSFET noma i-IGBT
Kumjikelezo, ukuthi ukhetha i-MOSFET njengeshubhu yokushintsha amandla noma i-IGBT umbuzo onjiniyela abavame ukuhlangana nawo. Uma izici ezifana ne-voltage, amandla amanje, namandla okushintsha ohlelo kucatshangelwa, amaphuzu alandelayo angafingqwa:
Abantu bavame ukubuza: "Ingabe i-MOSFET noma i-IGBT ingcono?" Eqinisweni, awukho umehluko omuhle noma omubi phakathi kwalokhu okubili. Okubaluleke kakhulu ukubona ukusetshenziswa kwayo kwangempela.
Uma usenemibuzo mayelana nomehluko phakathi kwe-MOSFET ne-IGBT, ungaxhumana no-Olukey ukuze uthole imininingwane.
U-Olukey ikakhulukazi usabalalisa imikhiqizo ye-MOSFET ka-WINSOK aphakathi nendawo naphansi. Imikhiqizo isetshenziswa kakhulu embonini yezempi, amabhodi omshayeli we-LED/LCD, amabhodi omshayeli wezimoto, ukushaja okusheshayo, ugwayi we-elekthronikhi, iziqapha ze-LCD, izinsiza zikagesi, izinto zikagesi ezincane zasendlini, imikhiqizo yezokwelapha, nemikhiqizo ye-Bluetooth. Izilinganiso ze-elekthronikhi, izinto zikagesi zezimoto, imikhiqizo yenethiwekhi, izinto zikagesi zasendlini, izinto ezisebenza ngamakhompiyutha kanye nemikhiqizo ehlukahlukene yedijithali.
Isikhathi sokuthumela: Dec-18-2023
