Lokhu kupakishiweI-MOSFETinzwa ye-infrared ye-pyroelectric.Uzimele ongunxande yiwindi lezinzwa.Iphinikhodi ye-G iyitheminali yaphansi, iphinikhodi engu-D iwukukhipha amanzi kwangaphakathi kwe-MOSFET, kanti iphinikhodi engu-S ingumthombo wangaphakathi we-MOSFET.Kusekhethi, u-G uxhumeke emhlabathini, u-D uxhumeke kumandla avumayo, amasiginali we-infrared afakwa efasiteleni, namasiginali kagesi aphuma ku-S.
Isango lokwahlulela G
Umshayeli we-MOS udlala indima enkulu ekubumbeni i-waveform kanye nokuthuthukisa ukushayela: Uma i-G signal waveform yeI-MOSFETayimanqamu ngokwanele, izodala inani elikhulu lokulahleka kwamandla ngesikhathi sesiteji sokushintshwa.Umphumela wayo oseceleni uwukunciphisa ukusebenza kahle kokuguqulwa kwesekethe.I-MOSFET izoba nomkhuhlane omkhulu futhi ilinyazwe kalula ukushisa.Kukhona i-capacitance ethile phakathi kwe-MOSFETGS., uma ikhono lokushayela isignali ye-G linganele, lizophazamisa kakhulu isikhathi sokugxuma kwe-waveform.
I-Short-circuit isigxobo se-GS, khetha izinga le-R × 1 le-multimeter, xhuma i-black test lead ku-S pole, futhi ukuhlolwa okubomvu kuholele esigxotsheni sika-D.Ukumelana kufanele kube ngo-Ω abambalwa kuye ngaphezu kuka-Ω abayishumi.Uma kutholakala ukuthi ukumelana kwephinikhodi ethile kanye nezikhonkwane zayo ezimbili akupheli, futhi kusengapheli ngemva kokushintshanisa imikhondo yokuhlola, kuyaqinisekiswa ukuthi le phini i-G pole, ngoba ifakwe kwezinye izikhonkwane ezimbili.
Nquma umthombo S bese ukhipha u-D
Setha i-multimeter ku-R×1k bese ukala ukumelana phakathi kwamaphini amathathu ngokulandelana.Sebenzisa indlela yokuhola yokuhlola ukushintshanisa ukukala ukumelana kabili.Lena enenani eliphansi lokumelana (ngokuvamile izinkulungwane ezimbalwa Ω ukuya ngaphezu kwezinkulungwane eziyishumi Ω) ukumelana phambili.Ngalesi sikhathi, i-black test lead iyisigxobo sika-S futhi i-red test lead ixhunywe ku-D pole.Ngenxa yezimo ezihlukene zokuhlola, inani elilinganiselwe le-RDS(livuliwe) lingaphezulu kwenani elivamile elinikezwe kumanuwali.
MayelanaI-MOSFET
I-transistor inesiteshi sohlobo lwe-N ngakho sibizwa nge-N-channelI-MOSFET, nomaI-NMOS.I-P-channel MOS (PMOS) FET nayo ikhona, okuyi-PMOSFET eyakhiwe i-N-type BACKGATE ene-doped kancane kanye nomthombo wohlobo lwe-P kanye nokukhipha amanzi.
Ngaphandle kohlobo lwe-N noma i-P-type MOSFET, umgomo wayo wokusebenza uyafana.I-MOSFET ilawula amandla amanje lapho kuphuma khona umshini wokukhipha amandla ngogesi osetshenziswa esangweni letheminali yokufaka.I-MOSFET iyithuluzi elilawulwa yi-voltage.Ilawula izici zedivayisi ngokusebenzisa i-voltage esetshenziswa esangweni.Akubangeli umphumela wokushaja wokugcina obangelwa isisekelo samanje lapho i-transistor isetshenziselwa ukushintsha.Ngakho-ke, ekushintsheni izinhlelo zokusebenza,Ama-MOSFETkufanele ishintshe ngokushesha kunama-transistors.
I-FET futhi ithola igama layo eqinisweni lokuthi okokufaka kwayo (okubizwa ngokuthi isango) kuthinta amandla amanje agelezayo ku-transistor ngokuveza inkambu kagesi kungqimba olubamba ukushisa.Eqinisweni, akukho okwamanje okugeleza kulesi sivikelo, ngakho-ke i-GATE yamanje yeshubhu ye-FET incane kakhulu.
I-FET ejwayeleke kakhulu isebenzisa ungqimba oluncane lwe-silicon dioxide njengesivikeli esingaphansi kwe-GATE.
Lolu hlobo lwe-transistor lubizwa nge-metal oxide semiconductor (MOS) transistor, noma, i-metal oxide semiconductor field effect transistor (MOSFET).Ngenxa yokuthi ama-MOSFET mancane futhi asebenza kahle kakhulu, athathe indawo yama-bipolar transistors ezinhlelweni eziningi.
Isikhathi sokuthumela: Nov-10-2023
