Kunezinhlobo ezimbili ezinkulu ze-MOSFET: uhlobo lwe-split junction kanye nohlobo lwesango elivalekile. I-Junction MOSFET (JFET) iqanjwe ngoba inamajunction amabili e-PN, kanye nesango elivalekileI-MOSFET(I-JGFET) ibizwa ngokuthi isango lifakwe ngokuphelele kwamanye ama-electrode. Njengamanje, phakathi kwama-MOSFET esangweni afakwe intulation, elisetshenziswa kakhulu yi-MOSFET, ebizwa ngokuthi i-MOSFET (metal-oxide-semiconductor MOSFET); ngaphezu kwalokho, kukhona ama-MOSFET wamandla we-PMOS, i-NMOS kanye ne-VMOS, kanye namamojula wamandla we-πMOS ne-VMOS asanda kwethulwa, njll.
Ngokwezinto ezihlukile ze-semiconductor yesiteshi, uhlobo lwe-junction kanye nohlobo lwesango lokuvikela luhlukaniswe ngesiteshi nesiteshi esingu-P. Uma ihlukaniswa ngokuya ngemodi yokuqhuba, i-MOSFET ingahlukaniswa ngohlobo lokuncipha nohlobo lokuthuthukisa. Ama-Junction MOSFET awuhlobo lokuwohloka kwawo wonke, futhi ama-MOSFET wesango afakwe ngaphakathi ayizinhlobo zokuncipha kanye nohlobo lokuthuthukisa.
Ama-transistors omphumela wenkundla angahlukaniswa abe ama-transistors we-junction field effect kanye nama-MOSFET. Ama-MOSFET ahlukaniswe abe izigaba ezine: uhlobo lokuchithwa kwesiteshi esingu-N kanye nohlobo lokuthuthukisa; Uhlobo lokuqedwa kwesiteshi se-P kanye nohlobo lokuthuthuka.
Izici ze-MOSFET
Isici se-MOSFET yi-voltage yesango eliseningizimu UG; elawula i-ID yayo yamanje yokukhipha. Uma kuqhathaniswa nama-bipolar transistors ajwayelekile, ama-MOSFET anezimpawu zokuthikamezeka kokufaka okuphezulu, umsindo ophansi, ububanzi obukhulu obuguquguqukayo, ukusetshenziswa kwamandla okuphansi, nokuhlanganiswa okulula.
Lapho inani eliphelele le-voltage ye-bias negative (-UG) likhuphuka, isendlalelo sokunciphisa siyakhula, isiteshi siyancipha, futhi i-ID yamanje yokukhipha iyancipha. Lapho inani eliphelele le-voltage ye-bias negative (-UG) lehla, isendlalelo sokunciphisa siyancipha, isiteshi siyakhula, futhi i-ID yamanje yokukhipha iyanda. Kungabonakala ukuthi i-ID yamanje yokudonsa ilawulwa yi-voltage yesango, ngakho-ke i-MOSFET iyidivayisi elawulwa yi-voltage, okungukuthi, izinguquko ku-current okukhiphayo zilawulwa izinguquko ku-voltage yokufaka, ukuze kuzuzwe ukukhulisa nokukhulisa amandla. ezinye izinjongo.
Njengama-bipolar transistors, lapho i-MOSFET isetshenziswa kumasekethe afana nokukhulisa, i-voltage echema nayo kufanele yengezwe esangweni layo.
Isango leshubhu lomphumela wenkundla yesiphambano kufanele lisetshenziswe nge-voltage ehlehlayo yokuchema, okungukuthi, i-voltage yesango engalungile kufanele ifakwe kushubhu le-N-channel futhi uzipho lwesango oluphozithivu kufanele lufakwe eshubhuni ye-P-channel. Isango elivikelwe eliqinisiwe I-MOSFET kufanele ifake i-voltage yesango langaphambili. Amandla kagesi wesango le-MOSFET yemodi yokuncipha angaba yinhle, ibe negethivu, noma "0". Izindlela zokwengeza ukuchema zifaka indlela yokuchema engaguquki, indlela yokuziphakela, indlela yokuhlanganisa eqondile, njll.
I-MOSFETinamapharamitha amaningi, okuhlanganisa amapharamitha e-DC, amapharamitha e-AC kanye nemingcele yomkhawulo, kodwa ekusetshenzisweni okuvamile, udinga kuphela ukunaka le mingcele eyinhloko elandelayo: i-saturated drain-source current ye-IDSS pinch-off voltage Up, (i-junction tube kanye nemodi yokuncipha ifakwe insulated ishubhu lesango, noma i-Voltage UT evulayo (ishubhu lesango elivikelwe eliqinisiwe), i-transconductance gm, i-drain-source breakdown voltage BUDS, i-PDSM yokuqeda amandla aphezulu kanye ne-IDSM yamanje yomthombo wokukhipha amanzi.
(1) Umsinga womthombo wokukhipha amanzi ogcwele amanzi
I-IDSS yamanje yomthombo wokukhipha amanzi egcwele isho amandla akhona lapho amandla kagesi esango UGS=0 ekuhlanganeni noma ekuncipheni kwesango elivalekile i-MOSFET.
(2)Ncinza i-voltage
I-pinch-off voltage UP ibhekisela ku-voltage yesango lapho uxhumano lomthombo wokukhipha amanzi luvele lunqanyulwe enhlonhlweni noma esangweni elivalekile le-MOSFET. Njengoba kuboniswe ku-4-25 ku-UGS-ID yejika leshubhu lesiteshi se-N, incazelo ye-IDSS ne-UP ingabonakala ngokucacile.
(3) I-voltage yokuvula
I-voltage yokuvula i-UT ibhekisela ku-voltage yesango lapho uxhumano lomthombo wokukhipha amanzi lusanda kwenziwa esangweni elivalekile le-MOSFET. Umfanekiso 4-27 ubonisa ijika le-UGS-ID leshubhu lesiteshi esingu-N, futhi incazelo ye-UT ingabonakala ngokucacile.
(4) Transconductance
I-Transconductance gm imele ikhono le-voltage yomthombo wesango i-UGS ukulawula i-ID yamanje yokukhipha amanzi, okungukuthi, isilinganiso soshintsho ku-ID yamanje yokudonsa kuya kuguquko ku-voltage yomthombo wesango i-UGS. 9m ipharamitha ebalulekile ukukala ikhono lokukhulisaI-MOSFET.
(5)I-voltage yokuhlukaniswa komthombo wokudonsa amanzi
I-voltage ehlukanisa umthombo wokukhipha amanzi i-BUDS ibhekisela kumthamo ophezulu wevoltheji womthombo wokudonsa amanzi i-MOSFET engawamukela lapho i-voltage yomthombo wesango i-UGS ingashintshi. Lena ipharamitha ekhawulelayo, futhi i-voltage yokusebenza esetshenziswa ku-MOSFET kufanele ibe ngaphansi kwe-BUDS.
(6)Ubukhulu bokuchithwa kwamandla
I-PDSM enkulu yokushabalalisa amandla iphinde ibe ipharamitha yomkhawulo, ebhekisela ekuchithekeni kwamandla omthombo wokukhipha amanzi aphezulu avunyelwe ngaphandle kokuwohloka kokusebenza kwe-MOSFET. Uma isetshenziswa, ukusetshenziswa kwamandla kwangempela kwe-MOSFET kufanele kube ngaphansi kwe-PDSM futhi kushiye umkhawulo othile.
(7)Umthamo omkhulu wamanje wokudonsa amanzi
I-IDSM yamanje yomthombo omkhulu wokukhipha amanzi ingenye ipharamitha yomkhawulo, ebhekisela kumkhawulo wamanje ovunyelwe ukudlula phakathi komsele nomthombo lapho i-MOSFET isebenza ngokujwayelekile. Ukusebenza kwamanje kwe-MOSFET akumele kudlule i-IDSM.
1. I-MOSFET ingasetshenziselwa ukukhulisa. Njengoba i-impedance yokufaka ye-MOSFET amplifier iphezulu kakhulu, i-coupling capacitor ingaba encane futhi ama-electrolytic capacitor akudingeki asetshenziswe.
2. I-impedance ephezulu yokufaka ye-MOSFET ifaneleka kakhulu ekuguqulweni kwe-impedance. Kuvame ukusetshenziselwa ukuguqulwa kwe-impedance esigabeni sokufaka sama-amplifiers esiteji esiningi.
3. I-MOSFET ingasetshenziswa njenge-resistor eguquguqukayo.
4. I-MOSFET ingasetshenziswa kalula njengomthombo wamanje oqhubekayo.
5. I-MOSFET ingasetshenziswa njengeswishi ye-elekthronikhi.
I-MOSFET inezici zokumelana okuphansi kwangaphakathi, i-voltage ephezulu yokumelana, ukushintsha okusheshayo, namandla aphezulu e-avalanche. I-span yamanje eklanyelwe ingu-1A-200A kanti i-voltage span ingu-30V-1200V. Singalungisa amapharamitha kagesi ngokwezinkambu zokufaka isicelo zekhasimende kanye nezinhlelo zohlelo lokusebenza zokuthuthukisa ukwethembeka komkhiqizo wekhasimende, ukusebenza kahle kokuguqulwa okuphelele kanye nokuncintisana kwentengo yomkhiqizo.
MOSFET vs Transistor Ukuqhathanisa
(1) I-MOSFET iyisici sokulawula amandla kagesi, kuyilapho i-transistor iyisici sokulawula samanje. Uma inani elincane kuphela lamanje livunyelwe ukuthathwa emthonjeni wesignali, i-MOSFET kufanele isetshenziswe; lapho i-voltage yesignali iphansi futhi inani elikhulu lamanje livunyelwe ukuthathwa emthonjeni wesignali, kufanele kusetshenziswe i-transistor.
(2) I-MOSFET isebenzisa izinkampani ezithwala ugesi eziningi ukuze ihambise ugesi, ngakho ibizwa ngokuthi i-unipolar device, kuyilapho ama-transistors enakho kokubili abathwali abaningi nabathwali abambalwa ukuze baphathe ugesi. Ibizwa ngokuthi i-bipolar device.
(3) Umthombo nokukhipha amanzi kwamanye ama-MOSFET kungasetshenziswa ngokushintshana, futhi amandla kagesi esango angaba positive noma abe negethivu, eguquguquka kakhulu kunama-transistors.
(4) I-MOSFET ingasebenza ngaphansi kwezimo ezincane kakhulu zamanje neziphansi kakhulu, futhi inqubo yayo yokukhiqiza ingahlanganisa kalula ama-MOSFET amaningi kusicwecwana se-silicon. Ngakho-ke, ama-MOSFET asetshenziswe kabanzi kumasekethe amakhulu ahlanganisiwe.
Indlela yokwahlulela ikhwalithi ne-polarity ye-MOSFET
Khetha ububanzi be-multimeter ukuya ku-RX1K, xhuma i-black test lead esigxotsheni sika-D, bese isivivinyo esibomvu siholele esigxotsheni sika-S. Thinta izigxobo zika-G no-D ngesikhathi esisodwa ngesandla sakho. I-MOSFET kufanele ibe sesimweni sokuqhuba ngokushesha, okungukuthi, inaliti yemitha ijikela endaweni enokumelana okuncane. , bese uthinta izigxobo ze-G no-S ngezandla zakho, i-MOSFET akufanele ibe nempendulo, okungukuthi, inaliti yemitha ngeke ibuyele emuva endaweni ye-zero. Ngalesi sikhathi, kufanele kwahlulelwe ukuthi i-MOSFET iyishubhu enhle.
Khetha ububanzi be-multimeter ukuya ku-RX1K, bese ukala ukumelana phakathi kwamaphini amathathu e-MOSFET. Uma ukumelana phakathi kwephinikhodi eyodwa nezinye izikhonkwane ezimbili kungapheli, futhi kusengapheli ngemva kokushintshanisa imikhondo yokuhlola, Khona-ke le phini i-G pole, kanti ezinye izikhonkwane ezimbili ziyi-S pole kanye ne-D pole. Bese usebenzisa i-multimeter ukukala inani lokumelana phakathi kwesigxobo sika-S nesigxobo sika-D kanye, shintshanisa imikhondo yokuhlola bese ulinganisa futhi. Lena enenani elincane lokumelana imnyama. Umthofu wokuhlola uxhunywe ku-S pole, futhi umthofu wokuhlola obomvu uxhunywe ku-D pole.
Ukutholwa kwe-MOSFET nezinyathelo zokuphepha zokusetshenziswa
1. Sebenzisa i-multimeter yesikhombi ukuhlonza i-MOSFET
1) Sebenzisa indlela yokulinganisa ukumelana ukuze uhlonze ama-electrode e-junction MOSFET
Ngokokwenzeka kokuthi amanani okumelana phambili nangemuva okuhlangana kwe-PN kwe-MOSFET ahlukile, ama-electrode amathathu e-MOSFET yokuhlangana angabonakala. Indlela eqondile: Setha i-multimeter kububanzi be-R×1k, khetha noma yimaphi ama-electrode amabili, bese ukala amanani awo okumelana aya phambili nakahlehla ngokulandelanayo. Uma amanani okumelana oya phambili nangemuva ama-electrode amabili elingana futhi eyizinkulungwane ezimbalwa zama-ohm, khona-ke ama-electrode amabili i-drain D kanye nomthombo S ngokulandelana. Ngoba kuma-MOSFETs okuhlangana, i-drain kanye nomthombo kuyashintshana, i-electrode esele kufanele ibe isango G. Ungakwazi futhi ukuthinta i-black test lead (i-red test lead nayo iyamukeleka) ye-multimeter kunoma iyiphi i-electrode, kanti enye iholela ekuhloleni thinta ama-electrode amabili asele ngokulandelana ukuze ulinganise inani lokumelana. Lapho amanani okumelana alinganiswa kabili cishe alingana, i-electrode ethinta umthofu wokuhlola omnyama yisango, kanti amanye ama-electrode amabili i-drain kanye nomthombo ngokulandelanayo. Uma amanani okumelana akalwa kabili womabili emakhulu kakhulu, kusho ukuthi isiqondiso esihlanekezelwe se-PN junction, okungukuthi, zombili ziwukumelana nokuhlehla. Kunganqunywa ukuthi iyi-N-channel MOSFET, futhi i-black test lead ixhunywe esangweni; uma amanani okumelana alinganiswa kabili Amanani okumelana mancane kakhulu, okubonisa ukuthi i-PN junction eya phambili, okungukuthi, ukumelana phambili, futhi kunqunywa ukuba yi-P-channel MOSFET. I-black test lead nayo ixhunywe esangweni. Uma isimo esingenhla singenzeki, ungakwazi ukufaka esikhundleni somkhondo wokuhlola omnyama nobomvu bese uqhuba ukuhlolwa ngokwendlela engenhla kuze kubonakale igridi.
2) Sebenzisa indlela yokulinganisa ukumelana ukuze unqume ikhwalithi ye-MOSFET
Indlela yokulinganisa ukumelana iwukusebenzisa i-multimeter ukukala ukumelana phakathi komthombo kanye nokukhipha amanzi e-MOSFET, isango nomthombo, isango nokukhipha amanzi, isango elingu-G1 nesango elingu-G2 ukuze kunqunywe ukuthi liyahambisana yini nenani lokumelana elikhonjiswe encwadini ye-MOSFET. Ukuphatha kuhle noma kubi. Indlela eqondile: Okokuqala, setha i-multimeter kububanzi be-R×10 noma i-R×100, bese ukala ukumelana phakathi komthombo S kanye ne-drain D, ngokuvamile ebangeni lamashumi ama-ohm kuya ezinkulungwaneni ezimbalwa zama-ohm (ingabonakala ku- ibhukwana elithi amashubhu amamodeli ahlukahlukene, amanani awo okumelana ahlukile), uma inani lokumelana elilinganisiwe likhulu kunevelu evamile, kungase kube ngenxa yokuxhumana okubi kwangaphakathi; uma inani lokumelana elilinganisiwe lingapheli, kungase kube isigxobo esiphukile sangaphakathi. Bese usetha i-multimeter ebangeni le-R × 10k, bese ukala amanani okumelana phakathi kwamasango G1 kanye ne-G2, phakathi kwesango nomthombo, naphakathi kwesango ne-drain. Lapho izilinganiso zokumelana ezilinganiselwe zonke zingapheli, khona-ke Kusho ukuthi ithubhu ijwayelekile; uma amanani okumelana angenhla amancane kakhulu noma kukhona indlela, kusho ukuthi i-tube yimbi. Kumele kuqashelwe ukuthi uma amasango amabili ephukile ku-tube, indlela yokufaka ingxenye ingasetshenziselwa ukutholwa.
3) Sebenzisa indlela yokufaka isignali yokungeniswa ukuze ulinganisele amandla okukhulisa we-MOSFET
Indlela eqondile: Sebenzisa izinga le-R×100 lokumelana namamitha amaningi, xhuma umthofu wokuhlola obomvu emthonjeni ongu-S, bese uholela ekuhloleni okumnyama ku-drain D. Engeza i-voltage kagesi engu-1.5V ku-MOSFET. Ngalesi sikhathi, inani lokumelana phakathi kwe-drain kanye nomthombo liboniswa ngenaliti yemitha. Bese ucindezela isango G le-MOSFET ye-junction ngesandla sakho, bese wengeza isignali ye-voltage efakwe emzimbeni womuntu esangweni. Ngale ndlela, ngenxa yomphumela wokukhulisa ithubhu, i-VDS ye-drain-source voltage kanye ne-Ib yamanje ye-drain izoshintsha, okungukuthi, ukumelana phakathi kwe-drain kanye nomthombo kuzoshintsha. Kulokhu, kungabonwa ukuthi inaliti yemitha inyakaza ngezinga elikhulu. Uma inaliti yegridi ebanjwe ngesandla inyakaza kancane, kusho ukuthi ikhono lokukhulisa ithubhu limpofu; uma inaliti inyakaza kakhulu, kusho ukuthi ikhono lokukhulisa ithubhu likhulu; uma inaliti inganyakazi, kusho ukuthi ishubhu libi.
Ngokwendlela engenhla, sisebenzisa isikali se-R×100 se-multimeter ukukala ukuhlangana kwe-MOSFET 3DJ2F. Okokuqala vula i-electrode engu-G yeshubhu bese ukala i-RDS yokumelana nomthombo wokukhipha amanzi ibe ngu-600Ω. Ngemva kokubamba i-electrode engu-G ngesandla sakho, inaliti yemitha ijikela kwesokunxele. Ukumelana okukhonjiwe kwe-RDS kungu-12kΩ. Uma inaliti yemitha ijika ibe nkulu, kusho ukuthi ishubhu lilungile. , futhi inamandla amakhulu wokukhulisa.
Kunamaphuzu ambalwa okufanele uwaqaphele lapho usebenzisa le ndlela: Okokuqala, lapho uhlola i-MOSFET futhi ubambe isango ngesandla sakho, inaliti ye-multimeter ingase ijike iye kwesokudla (inani lokumelana liyancipha) noma kwesokunxele (inani lokumelana liyakhula) . Lokhu kungenxa yokuthi i-voltage ye-AC eyenziwa umzimba womuntu iphezulu uma kuqhathaniswa, futhi ama-MOSFET ahlukene angase abe nezindawo zokusebenza ezihlukene uma elinganiswa nebanga lokumelana (kungaba esebenza endaweni egcwele noma indawo engagcwalisiwe). Ukuhlola kubonise ukuthi i-RDS yamashubhu amaningi iyanda. Okusho ukuthi, isandla sewashi sijikela kwesokunxele; i-RDS yamashubhu ambalwa iyancipha, okubangela ukuthi isandla sewashi sijikele kwesokudla.
Kodwa kungakhathaliseki ukuthi isandla sewashi sijikela ngakuphi, inqobo nje uma isandla sewashi sishwiba ngokuba sikhulu, kusho ukuthi ishubhu linamandla amakhulu okukhulisa. Okwesibili, le ndlela iphinde isebenze kuma-MOSFET. Kodwa kufanele kuqashelwe ukuthi ukumelana kokufaka kwe-MOSFET kuphezulu, futhi i-voltage evunyelwe evunyelwe yesango G akufanele ibe phezulu kakhulu, ngakho-ke ungalincindi isango ngokuqondile ngezandla zakho. Kufanele usebenzise isibambo esivalekile se-screwdriver ukuze uthinte isango ngenduku yensimbi. , ukuvimbela ukukhokhiswa okubangelwa umzimba womuntu ukuthi kufakwe ngokuqondile esangweni, okubangela ukuphuka kwesango. Okwesithathu, ngemva kokulinganisa ngakunye, izigxobo ze-GS kufanele zibe zifushane. Lokhu kungenxa yokuthi kuzoba nenani elincane lenkokhelo ku-GS junction capacitor, eyakha i-voltage ye-VGS. Ngenxa yalokho, izandla zemitha zingase zinganyakazi lapho zikala futhi. Okuwukuphela kwendlela yokukhipha inkokhiso ukusheshisa ukushaja phakathi kwama-electrode e-GS.
4) Sebenzisa indlela yokulinganisa ukumelana ukuze uhlonze ama-MOSFET angaphawuliwe
Okokuqala, sebenzisa indlela yokulinganisa ukumelana ukuze uthole izikhonkwane ezimbili ezinamanani okumelana, okungukuthi umthombo S kanye ne-drain D. Izikhonkwane ezimbili ezisele ziyisango lokuqala i-G1 kanye nesango lesibili i-G2. Bhala phansi inani lokumelana phakathi komthombo S kanye nomsele D olinganiswa ngemikhondo emibili yokuhlola kuqala. Shintsha imikhondo yokuhlola uphinde ulinganise futhi. Bhala inani elilinganisiwe lokumelana. Lena enenani elikhulu lokumelana elilinganiswa kabili iwukuhola kokuhlola okumnyama. I-electrode exhunyiwe i-drain D; umthofu wokuhlola obomvu uxhunywe kumthombo S. Izigxobo zika-S no-D ezihlonzwe ngale ndlela zingabuye ziqinisekiswe ngokulinganisa amandla okukhulisa ishubhu. Okusho ukuthi, ukuhola kokuhlola okumnyama okunamandla amakhulu okukhuliswa kuxhunywe ku-D pole; umthofu wokuhlola obomvu uxhunywe emhlabathini ku-8-pole. Imiphumela yokuhlolwa yazo zombili izindlela kufanele ifane. Ngemva kokunquma izikhundla ze-drain D kanye nomthombo S, faka isekethe ngokwezindawo ezihambisanayo ze-D ne-S. Ngokuvamile, i-G1 ne-G2 izophinde iqondiswe ngokulandelana. Lokhu kunquma izikhundla zamasango amabili i-G1 ne-G2. Lokhu kunquma ukuhleleka kwezikhonkwane ze-D, S, G1, ne-G2.
5) Sebenzisa ukuguqulwa kwevelu yokumelana ne-reverse ukuze unqume usayizi we-transconductance
Lapho ukala ukusebenza kwe-transconductance kwe-MOSFET yokuthuthukisa isiteshi se-VMOSN, ungasebenzisa umthofu wokuhlola obomvu ukuze uxhume umthombo ongu-S kanye nomthofu wokuhlola omnyama ku-drain D. Lokhu kulingana nokwengeza i-voltage ehlehlayo phakathi komthombo nomsele. Ngalesi sikhathi, isango liyisifunda esivulekile, futhi inani lokumelana ne-tube alizinzile kakhulu. Khetha ububanzi be-ohm be-multimeter ukuya kububanzi bokumelana okuphezulu kwe-R×10kΩ. Ngalesi sikhathi, i-voltage kumitha iphezulu. Uma uthinta igridi G ngesandla sakho, uzothola ukuthi inani lokumelana neshubhu lishintsha kakhulu. Ushintsho olukhulu, kuphakama inani le-transconductance ye-tube; uma i-transconductance ye-tube ngaphansi kokuhlolwa incane kakhulu, sebenzisa le ndlela ukukala Lapho , ukumelana okuphambene kushintsha kancane.
Izinyathelo zokuphepha zokusebenzisa i-MOSFET
1) Ukuze usebenzise i-MOSFET ngokuphephile, amanani omkhawulo wamapharamitha anjengamandla ahlakazekile eshubhu, i-voltage ephezulu yomthombo wokukhipha amanzi, i-voltage yomthombo omkhulu wesango, kanye namandla aphezulu amanje angeke kweqiwe ekwakhiweni kwesekethe.
I-2) Uma usebenzisa izinhlobo ezihlukahlukene zama-MOSFET, kufanele zixhunywe kumjikelezo ngokuhambisana ngokuqinile nokuchema okudingekayo, futhi i-polarity ye-MOSFET bias kufanele ibonwe. Isibonelo, kukhona ukuhlangana kwe-PN phakathi komthombo wesango kanye nokukhipha amanzi e-MOSFET ehlanganayo, futhi isango leshubhu le-N-channel alikwazi ukuchema kahle; isango le-P-channel tube alikwazi ukuchema kabi, njll.
3) Ngenxa yokuthi i-impedance yokufaka ye-MOSFET iphezulu kakhulu, izikhonkwane kufanele zifinyezwe ngesikhathi sokuthutha nokugcinwa, futhi kufanele zihlanganiswe nesivikelo sensimbi ukuvimbela amandla angaphandle adangekile ekuqhekekeni kwesango. Ikakhulukazi, sicela uqaphele ukuthi i-MOSFET ayikwazi ukufakwa ebhokisini lepulasitiki. Kungcono ukuyigcina ebhokisini lensimbi. Ngesikhathi esifanayo, qaphela ukugcina umswakama we-tube.
4) Ukuze kuvinjwe ukuqhekeka kwesango le-MOSFET, wonke amathuluzi okuhlola, amabhentshi okusebenzela, ama-ayina asodayo, namasekethe ngokwawo kufanele asekelwe kahle; lapho solder izikhonkwane, solder umthombo kuqala; ngaphambi kokuxhuma kumjikelezo, ithubhu Zonke iziphetho zokuhola kufanele zibe isikhashana-circuited komunye nomunye, futhi i-short-circuiting material kufanele isuswe ngemuva kokuqedwa kwe-welding; lapho ususa ithubhu ku-rack yengxenye, izindlela ezifanele kufanele zisetshenziswe ukuze kuqinisekiswe ukuthi umzimba womuntu usekelwe phansi, njengokusebenzisa indandatho ephansi; vele, uma i-A gas-heated soldering iron ethuthukisiwe ilungele ukushisela ama-MOSFET futhi iqinisekisa ukuphepha; ithubhu akumele ifakwe noma ikhishwe kusekethe ngaphambi kokuthi ugesi ucishwe. Izinyathelo zokuphepha ezingenhla kufanele zinakwe lapho usebenzisa i-MOSFET.
5) Uma ufaka i-MOSFET, qaphela indawo yokufaka futhi uzame ukugwema ukuba seduze nesici sokushisa; ukuze uvimbele ukudlidliza kokufakwa kwepayipi, kuyadingeka ukuqinisa igobolondo le-tube; lapho iphinikhodi igobile, kufanele ibe nkulu ngo-5 mm kunosayizi wempande ukuze kuqinisekiswe ukuthi Gwema ukugoba izikhonkwane futhi ubangele ukuvuza komoya.
Kuma-MOSFET wamandla, izimo ezinhle zokulahla ukushisa ziyadingeka. Ngenxa yokuthi ama-MOSFET kagesi asetshenziswa ngaphansi kwezimo eziphakeme zomthwalo, amasinki okushisa anele kufanele aklanywe ukuze kuqinisekiswe ukuthi izinga lokushisa lekesi alidluli inani elilinganiselwe ukuze idivayisi isebenze ngokuzinza nangokwethembeka isikhathi eside.
Ngamafuphi, ukuze kuqinisekiswe ukusetshenziswa okuphephile kwama-MOSFET, kunezinto eziningi okufanele uzinake, futhi kunezinyathelo ezihlukahlukene zokuphepha okufanele zithathwe. Iningi labasebenzi abangochwepheshe nabezobuchwepheshe, ikakhulukazi iningi labashisekeli be-elekthronikhi, kufanele baqhubeke ngokusekelwe esimweni sabo sangempela futhi bathathe izindlela ezingokoqobo zokusebenzisa ama-MOSFET ngokuphepha nangempumelelo.
Isikhathi sokuthumela: Apr-15-2024
