Yiziphi izifunda ezine ze-MOSFET?

 

Izifunda ezine ze-MOSFET yokuthuthukisa isiteshi

(1) Isifunda esiguquguqukayo sokumelana (esibizwa nangokuthi isifunda esingagcwele)

I-Ucs" Ucs (th) (i-voltage evulayo), i-uDs" UGs-Ucs (th), iyisifunda esingakwesokunxele sokulandelela okubekwe ngaphambili kumfanekiso lapho isiteshi sivulwa khona. Inani lama-UD lincane kulesi sifunda, futhi ukumelana nesiteshi kulawulwa kuphela ama-UG. Uma ama-uG eqinisekile, i-ip nama-uD ebudlelwaneni bomugqa, isifunda silinganiswa njengesethi yemigqa eqondile. Ngalesi sikhathi, ishubhu lomphumela wenkundla D, S phakathi kwesilinganiso se-voltage UGS

Ilawulwa yi-voltage UGS ukumelana nokuguquguquka.

(2) isifunda samanje esiqhubekayo (esaziwa nangokuthi isifunda sokugcwala kwendawo, isifunda sokukhulisa, isifunda esisebenzayo)

Ucs ≥ Ucs (h) kanye no-Ubs ≥ UcsUssth), kumfanekiso wohlangothi lwesokudla lwethrekhi yokuncinza ngaphambili, kodwa okwamanje engakahlakazwa esifundeni, esifundeni, lapho i-uGs kufanele ibe khona, ib cishe ayenzi ukushintsha nama-UDs, kuyisici esihlala sikhona. ngilawulwa kuphela ama-UG, bese i-MOSFETD, S ilingana nokulawulwa kwe-voltage uGs yomthombo wamanje. I-MOSFET isetshenziswa kumasekhethi okukhulisa amandla, ngokuvamile emsebenzini we-MOSFET D, S ilingana nomthombo wamanje wokulawula ama-voltage uGs. I-MOSFET esetshenziswa kumasekhethi wokukhulisa, imvamisa isebenza esifundeni, eyaziwa nangokuthi indawo yokukhulisa.

(3) Indawo yokunamathisela (ephinde ibizwe ngokuthi indawo eyisikiwe)

Indawo yokusika (eyaziwa nangokuthi indawo esikiwe) ukuhlangabezana ne-ucs "Ues (th) yesibalo esiseduze ne-eksisi evundlile yesifunda, isiteshi siboshiwe sonke, saziwa ngokuthi isiqeshana esigcwele sivaliwe, io = 0 , ishubhu alisebenzi.

(4) indawo yokuhlukanisa indawo

Isifunda sokuhlukaniswa sitholakala esifundeni esingakwesokudla sesibalo. Ngama-UD akhulayo, ukuhlangana kwe-PN kungaphansi kwe-voltage ehlehla kakhulu kanye nokuwohloka, i-ip ikhuphuka kakhulu. I-tube kufanele isetshenziswe ukuze kugwenywe ukusebenza endaweni ephukile. Ijika lesici sokudlulisa lingatholwa ku-curve yesici sokukhiphayo. Endleleni esetshenziswa njengegrafu ukuthola. Isibonelo, kuMfanekiso 3 (a) we-Ubs = 6V umugqa oqondile, ukuphambana kwawo namajika ahlukahlukene ahambisana ne-i, Us amanani kuzixhumanisi ze-ib- Uss ezixhunywe kwijika, okungukuthi, ukuthola ijika lesici sokudlulisa.

Amapharamitha weI-MOSFET

Kunamapharamitha amaningi e-MOSFET, okuhlanganisa amapharamitha e-DC, amapharamitha e-AC kanye nemingcele yomkhawulo, kodwa yimingcele elandelayo kuphela esemqoka okufanele ikhathazeke ngokusetshenziswa okufanayo: i-saturated drain-source current ye-IDSS pinch-off voltage Up, (amashubhu ohlobo lwe-junction kanye nokuncipha -uhlobo lwamashubhu amasango avaliwe, noma i-voltage evulayo i-UT (amashubhu esango angavalwa aqinisiwe), i-trans-conductance gm, i-BUDS yomthombo wamandla kagesi wokuvuza, amandla aphezulu ahlakazekile i-PDSM, kanye ne-IDSM yamanje yomthombo wokukhipha amanzi amaningi.

(1) Umsinga wokukhipha amanzi ogcwele amanzi

I-IDSS yamanje yokukhipha amanzi emfucumfucu ingumsinga wokukhipha amanzi endaweni ehlanganayo noma yohlobo lokuncipha elivalekile lesango le-MOSFET lapho i-voltage yesango UGS = 0.

(2) I-voltage ye-clip-off

I-pinch-off voltage UP yi-voltage yesango kuhlobo lwe-junction noma i-depletion-type insulated-gate MOSFET evele inqamuke phakathi komsele nomthombo. Njengoba kuboniswe ku-4-25 kushubhu le-N-channel UGS ijika le-ID, kungaqondwa ukubona ukubaluleka kwe-IDSS kanye ne-UP

MOSFET izifunda ezine

(3) I-voltage yokuvula

I-voltage evulayo i-UT iyi-voltage yesango ku-MOSFET eqinisiwe yesango elenza umthombo we-inter-drain-source uvele uqhubekisele phambili.

(4) Transconductance

I-transconductance gm ikhono lokulawula le-voltage yomthombo wesango i-UGS ku-ID yamanje yokukhipha amanzi, okungukuthi, isilinganiso soshintsho ku-ID yamanje yokudonsa kuya ekushintsheni kugesi wesango lomthombo we-UGS. I-9m iyipharamitha ebalulekile enesisindo sekhono lokukhulisa leI-MOSFET.

(5) Khipha ugesi wokuhlukaniswa komthombo

I-voltage yomthombo wokudonsa amanzi i-BUDS ibhekisela ku-voltage yomthombo wesango i-UGS ethile, ukusebenza okuvamile kwe-MOSFET kungamukela umkhawulo ophezulu wevoltheji yomthombo wokudonsa. Lena ipharamitha yomkhawulo, engezwe ku-voltage yokusebenza ye-MOSFET kumele ibe ngaphansi kwe-BUDS.

(6) Ukukhipha Amandla Okukhulu

I-PDSM yokushabalalisa amandla amaningi iphinde ibe ipharamitha yomkhawulo, ibhekisela ku-I-MOSFETukusebenza akuwohloki lapho ukuchithwa kwamandla komthombo wokuvuza okuphezulu okuphezulu okuvunyelwe. Lapho usebenzisa ukusetshenziswa kwamandla okusebenzayo kwe-MOSFET kufanele kube ngaphansi kwe-PDSM futhi kushiye umkhawulo othile.

(7) Ukudonsa Okuphezulu Kwamanje

I-IDSM yamanje yokuvuza enkulu ingenye ipharamitha yomkhawulo, ibhekisela ekusebenzeni okuvamile kwe-MOSFET, umthombo wokuvuza wesilinganiso esiphezulu esivunyelwe ukudlula ku-manje yokusebenza kwe-MOSFET akufanele udlule i-IDSM.

Isimiso sokusebenza se-MOSFET

Umgomo wokusebenza we-MOSFET (i-N-channel enhancement MOSFET) ukusebenzisa i-VGS ukulawula inani "le-inductive charge", ukuze kuguqulwe isimo seshaneli yokuqondisa eyakhiwe yile "inductive charge", bese ukufeza inhloso. wokulawula umsinga wokudonsa amanzi. Inhloso iwukuba ukulawula i-drain current. Ekwenziweni kwamashubhu, ngenqubo yokwenza inani elikhulu lama-ion amahle kungqimba lwe-insulating, ngakho-ke ngakolunye uhlangothi lwesixhumi esibonakalayo kungenziwa ukukhokhiswa okubi kakhulu, lezi zindleko ezimbi zingenziwa.

Lapho i-voltage yesango ishintsha, inani lenkokhiso elingeniswa esiteshini nalo liyashintsha, ububanzi beshaneli yokuhambisa nakho buyashintsha, futhi ngaleyo ndlela i-ID yamanje yokudonsa ishintsha ne-voltage yesango.

Indima ye-MOSFET

I. I-MOSFET ingasetshenziswa ekukhuliseni. Ngenxa ye-impedance ephezulu yokufaka ye-MOSFET amplifier, i-coupling capacitor ingaba umthamo omncane, ngaphandle kokusebenzisa ama-electrolytic capacitor.

Okwesibili, i-impedance ephezulu yokufaka ye-MOSFET ifaneleka kakhulu ukuguqulwa kwe-impedance. Okuvame ukusetshenziswa esigabeni sokufaka i-amplifier esinezigaba eziningi sokuguqulwa kwe-impedance.

I-MOSFET ingasetshenziswa njenge-resistor eguquguqukayo.

Okwesine, i-MOSFET ingasetshenziswa kalula njengomthombo wamanje oqhubekayo.

Okwesihlanu, i-MOSFET ingasetshenziswa njengesishintshi se-elekthronikhi.