Amadivayisi we-semiconductor yamandla asetshenziswa kakhulu embonini, ekusetshenzisweni, ezempi nakweminye imikhakha, futhi anesikhundla esiphakeme samasu.Ake sibheke isithombe sonke samadivayisi kagesi esithombeni:
Amadivayisi we-semiconductor yamandla angahlukaniswa abe uhlobo olugcwele, uhlobo olulawulwa kancane kanye nohlobo olungalawuleki ngokuya ngezinga lokulawula amasignali wesifunda.Noma ngokuya ngezimpawu zesiginali yesekethe yokushayela, ingahlukaniswa ngohlobo oluqhutshwa yi-voltage, uhlobo oluqhutshwa njengamanje, njll.
| Ukwahlukanisa | uhlobo | Amadivayisi akhethekile we-semiconductor yamandla |
| Ukulawulwa kwezimpawu zikagesi | Uhlobo olulawulwa kancane | I-SCR |
| Ukulawula okugcwele | I-GTO, GTR, MOSFET, IGBT | |
| Ayilawuleki | I-Power Diode | |
| Izici zesignali yokushayela | Uhlobo oluqhutshwa yi-voltage | IGBT, MOSFET, SITH |
| Uhlobo lwamanje olushayelwayo | I-SCR, GTO, GTR | |
| I-waveform yesiginali esebenzayo | Uhlobo lwe-Pulse trigger | SCR, GTO |
| Uhlobo lokulawula ngogesi | GTR,MOSFET,IGBT | |
| Izimo lapho ama-electron aphethe amandla abamba iqhaza | idivayisi ye-bipolar | I-Power Diode, SCR, GTO, GTR,BSIT,BJT |
| Idivayisi ye-Unipolar | I-MOSFET, SIT | |
| Idivayisi eyinhlanganisela | I-MCT, IGBT, SITH kanye ne-IGCT |
Amadivayisi ahlukene we-semiconductor yamandla anezici ezihlukile ezifana ne-voltage, umthamo wamanje, amandla okuvimbela, nosayizi.Ekusetshenzisweni kwangempela, izisetshenziswa ezifanele zidinga ukukhethwa ngokuya ngezinkambu nezidingo ezahlukahlukene.
Imboni ye-semiconductor idlule ezizukulwaneni ezintathu zezinguquko ezibonakalayo kusukela yazalwa.Kuze kube manje, impahla yokuqala ye-semiconductor emelwe ngu-Si isasetshenziswa kakhulu emkhakheni wamadivayisi we-semiconductor yamandla.
| Impahla ye-semiconductor | I-Bandgap (eV) | Iphoyinti lokuncibilika(K) | isicelo main | |
| Izinto ze-semiconductor yesizukulwane sokuqala | Ge | 1.1 | 1221 | I-voltage ephansi, imvamisa ephansi, ama-transistor amandla aphakathi nendawo, ama-photodetectors |
| Izinto ze-semiconductor yesizukulwane sesibili | Si | 0.7 | 1687 | |
| Izinto ze-semiconductor yesizukulwane sesithathu | I-GaAs | 1.4 | 1511 | I-Microwave, ama-millimeter wave amadivaysi, amadivaysi akhipha ukukhanya |
| I-SiC | 3.05 | 2826 | 1. Izinga lokushisa eliphezulu, imvamisa ephezulu, amadivayisi anamandla amakhulu amelana nemisebe 2. I-Blue, grade, i-violet light-emitting diodes, ama-lasemiconductor lasers | |
| I-GaN | 3.4 | 1973 | ||
| AIN | 6.2 | 2470 | ||
| C | 5.5 | ＞3800 | ||
| ZnO | 3.37 | 2248 | ||
Fingqa izici zamadivayisi kagesi alawulwa kancane futhi alawulwa ngokugcwele:
| Uhlobo lwedivayisi | I-SCR | I-GTR | I-MOSFET | I-IGBT |
| Uhlobo lokulawula | I-Pulse trigger | Ukulawula kwamanje | ukulawulwa kwamandla kagesi | isikhungo sefilimu |
| umugqa wokuzivala | Ukuvalwa kokuhamba | idivayisi yokuzivala | idivayisi yokuzivala | idivayisi yokuzivala |
| imvamisa yokusebenza | ＜1khz | ＜30khz | 20khz-Mhz | ＜40khz |
| Amandla okushayela | encane | enkulu | encane | encane |
| ukushintsha ukulahlekelwa | enkulu | enkulu | enkulu | enkulu |
| ukulahlekelwa conduction | encane | encane | enkulu | encane |
| I-voltage kanye nezinga lamanje | 最大 | enkulu | ubuncane | Okuningi |
| Izinhlelo zokusebenza ezijwayelekile | Ukushisa kokungenisa imvamisa emaphakathi | I-UPS frequency converter | ukushintsha ukunikezwa kwamandla | I-UPS frequency converter |
| intengo | ephansi kakhulu | ngaphansi | phakathi | Okubiza kakhulu |
| conductance modulation umphumela | babe | babe | akukho | babe |
Yazi ama-MOSFET
I-MOSFET ine-impedance ephezulu yokufaka, umsindo ophansi, nokuzinza okuhle kwe-thermal;inenqubo elula yokukhiqiza kanye nemisebe enamandla, ngakho-ke ivame ukusetshenziswa kumasekhethi we-amplifier noma ama-switching circuits;
(1) Amapharamitha wokukhetha okuyinhloko: i-drain-source voltage VDS (ukumelana ne-voltage), i-ID yokuvuza okuqhubekayo yamanje, i-RDS(ivuliwe) ukumelana, i-Ciss input capacitance (umthamo we-junction), isici sekhwalithi FOM=Ron*Qg, njll.
(2) Ngokwezinqubo ezihlukene, ihlukaniswe yaba i-TrenchMOS: umsele we-MOSFET, ikakhulukazi endaweni yamandla kagesi aphansi phakathi kuka-100V;I-SGT (Split Gate) MOSFET: isango elihlukanisayo i-MOSFET, ikakhulukazi endaweni yamandla kagesi aphakathi nendawo naphansi phakathi kuka-200V;I-SJ MOSFET: I-super junction MOSFET, ikakhulukazi endaweni yamandla kagesi aphezulu 600-800V;
Ekushintsheni kwamandla kagesi, njenge-open-drain circuit, i-drain ixhunywe kumthwalo ongaqinile, okubizwa ngokuthi i-open-drain.Kumjikelezo we-open-drain, kungakhathaliseki ukuthi umthamo we-voltage uxhumeke kangakanani, umthamo wamanje ungavulwa futhi uvaliwe.Kuyidivayisi ekahle yokushintsha i-analog.Lona umgomo we-MOSFET njengedivaysi yokushintsha.
Mayelana nesabelo semakethe, ama-MOSFET cishe wonke agxile ezandleni zabakhiqizi abakhulu bamazwe ngamazwe.Phakathi kwabo, u-Infineon uthole i-IR (American International Rectifier Company) ngo-2015 futhi waba umholi wemboni.KU-Semiconductor iphinde yaqeda ukutholwa kwe-Fairchild Semiconductor ngo-September 2016. , isabelo semakethe sigxumele endaweni yesibili, bese izilinganiso zokuthengisa kube nguRenesas, Toshiba, IWC, ST, Vishay, Anshi, Magna, njll.;
Izinhlobo ze-MOSFET ezijwayelekile zihlukaniswe ngochungechunge oluningana: i-American, Japanese and Korean.
Uchungechunge lwaseMelika: Infineon, IR, Fairchild, ON Semiconductor, ST, TI, PI, AOS, njll.;
IsiJapane: Toshiba, Renesas, ROHM, njll.;
Uchungechunge lwaseKorea: Magna, KEC, AUK, Morina Hiroshi, Shinan, KIA
Izigaba zephakheji ye-MOSFET
Ngokwendlela efakwe ngayo ebhodini le-PCB, kunezinhlobo ezimbili eziyinhloko zamaphakheji e-MOSFET: i-plug-in (Nge-Hole) kanye ne-surface Mount (i-Surface Mount)..
Uhlobo lwe-plug-in lusho ukuthi izikhonkwane ze-MOSFET zidlula emigodini ekhuphukayo yebhodi le-PCB futhi zishiselwe ebhodini le-PCB.Amaphakheji avamile we-plug-in ahlanganisa: iphakheji ye-dual in-line (DIP), iphakheji ye-transistor outline (TO), kanye nephakheji ye-pin grid array (PGA).
Ukupakisha kwe-plug-in
Ukukhweza phezulu kulapho izikhonkwane ze-MOSFET ne-flange yokukhipha ukushisa zishiselwa khona kumaphedi angaphezulu kwebhodi le-PCB.Amaphakheji ajwayelekile okukhweza ahlanganisa: uhlaka lwe-transistor (D-PAK), i-transistor yohlaka oluncane (SOT), iphakheji yohlaka oluncane (SOP), iphakheji ye-quad flat (QFP), i-plastic leaded chip carrier (PLCC), njll.
iphakethe lokukhweza phezulu
Ngokuthuthukiswa kobuchwepheshe, amabhodi e-PCB afana namabhodi omama namakhadi ezithombe okwamanje asebenzisa amaphakheji e-plug-in aqondile kancane kancane, futhi kusetshenziswa ukupakishwa okwengeziwe kwe-surface mount.
1. Iphakeji ye-Dual in-line (DIP)
Iphakheji ye-DIP inemigqa emibili yamaphini futhi idinga ukufakwa esokhethi ye-chip enesakhiwo se-DIP.Indlela yayo yokuphuma i-SDIP (Nciphisa i-DIP), okuyiphakheji elincipha eliphindwe kabili emgqeni.Ukuminyana kwephinikhodi kuphakeme ngokuphindwe ka-6 kune-DIP.
Amafomu esakhiwo sokupakisha se-DIP ahlanganisa: i-DIP enezingqimba eziningi ze-ceramic dual-in-line DIP, i-DIP ye-ceramic dual-in-line yomugqa owodwa, i-DIP yohlaka lomthofu (okuhlanganisa uhlobo lokuvala uphawu lwengilazi-ceramic, uhlobo lwesakhiwo se-plastic encapsulation, i-ceramic low-melting glass encapsulation uhlobo) njll. Isici sokupakishwa kwe-DIP ukuthi ikwazi ukubona kalula i-welding yamabhodi e-PCB ngembobo futhi ihambisana kahle nebhodi lomama.
Kodwa-ke, ngenxa yokuthi indawo yayo yokupakisha nokuqina kukhulu kakhulu, futhi izikhonkwane zonakaliswa kalula phakathi nenqubo yokuxhuma nokukhipha i-plug, ukwethembeka akulungile.Ngesikhathi esifanayo, ngenxa yethonya lenqubo, inani lezikhonkwane ngokuvamile alidluli i-100. Ngakho-ke, ohlelweni lokuhlanganiswa okuphezulu kwemboni ye-elekthronikhi, ukupakishwa kwe-DIP kuye kwahoxiswa kancane kancane kusukela esigabeni somlando.
2. Iphakheji ye-Transistor Outline (TO)
Ukucaciswa kokupakisha kwangaphambi kwesikhathi, okufana ne-TO-3P, TO-247, TO-92, TO-92L, TO-220, TO-220F, TO-251, njll. wonke amadizayini wokupakisha e-plug-in.
I-TO-3P/247: Kuyifomu lokupakisha elivame ukusetshenziswa lamandla kagesi aphakathi nendawo kanye nama-MOSFET amanje.Umkhiqizo unezici zokumelana ne-voltage ephezulu kanye nokumelana nokuqhekeka okuqinile..
I-TO-220/220F: I-TO-220F iphakethe lepulasitiki eligcwele, futhi asikho isidingo sokwengeza i-insulating pad lapho uyifaka kurediyetha;I-TO-220 ineshidi lensimbi elixhunywe kuphini eliphakathi, futhi i-insulating pad iyadingeka uma ufaka i-radiator.Ama-MOSFET alezi zitayela zamaphakheji amabili anokubonakala okufanayo futhi angasetshenziswa ngokushintshana..
TO-251: Lo mkhiqizo opakishiwe usetshenziselwa kakhulu ukunciphisa izindleko nokunciphisa usayizi womkhiqizo.Isetshenziswa kakhulu ezindaweni ezinama-voltage aphakathi nendawo kanye namandla aphezulu angaphansi kuka-60A kanye namandla aphezulu angaphansi kuka-7N..
TO-92: Le phakheji isetshenziselwa kuphela i-MOSFET enamandla aphansi (okwamanje ngaphansi kuka-10A, imelana ne-voltage engaphansi kuka-60V) kanye ne-high-voltage 1N60/65, ukuze kwehliswe izindleko.
Eminyakeni yamuva nje, ngenxa yezindleko zokushisela eziphezulu zenqubo yokupakisha i-plug-in kanye nokusebenza okuphansi kokushisa kokushisa emikhiqizweni yohlobo lwe-patch, isidingo emakethe ye-surface Mount siqhubekile nokukhula, okuholele nasekuthuthukisweni kwe-TO packaging. emaphaketheni e-surface mount.
I-TO-252 (ebuye ibizwe nge-D-PAK) kanye ne-TO-263 (D2PAK) womabili amaphakheji wokukhweza ngaphezulu.
UKUZE ukupakisha ukubukeka komkhiqizo
I-TO252/D-PAK iphakethe le-chip yepulasitiki, elivame ukusetshenziselwa ukupakisha ama-transistors amandla kanye nama-voltage stabilizing chips.Ingelinye lamaphakheji ajwayelekile amanje.I-MOSFET esebenzisa le ndlela yokupakisha inama-electrode amathathu, isango (G), idrayivu (D), kanye nomthombo (S).Iphinikhodi ye-drain (D) iyanqunywa futhi ayisetshenziswa.Esikhundleni salokho, usinki wokushisa ngemuva usetshenziswa njenge-drain (D), eshiselwe ngqo ku-PCB.Ngakolunye uhlangothi, isetshenziselwa ukukhipha amaza amakhulu, futhi ngakolunye uhlangothi, ichitha ukushisa nge-PCB.Ngakho-ke, kunamaphedi e-D-PAK amathathu ku-PCB, futhi iphedi yokudonsa (D) inkulu.Imininingwane yokupakishwa kwayo imi kanje:
Ukucaciswa kosayizi wephakheji ye-TO-252/D-PAK
I-TO-263 iwuhlobo lwe-TO-220.Ngokuyinhloko yakhelwe ukuthuthukisa ukusebenza kahle kokukhiqiza kanye nokuchithwa kokushisa.Isekela izinga eliphezulu kakhulu lamanje kanye ne-voltage.Kuvame kakhulu kuma-MOSFET aphakathi naphakathi nomthamo wamanje ngaphansi kuka-150A nangaphezulu kuka-30V.Ngaphezu kwe-D2PAK (TO-263AB), ihlanganisa ne-TO263-2, TO263-3, TO263-5, TO263-7 nezinye izitayela, ezingaphansi kwe-TO-263, ikakhulukazi ngenxa yenani elihlukile nebanga lamaphini. .
Ukucaciswa kosayizi wephakheji ye-TO-263/D2PAKs
3. Phina iphakheji yohlu lwegridi (PGA)
Kukhona izikhonkwane eziningi zesikwele sohlelo ngaphakathi nangaphandle kwe-PGA (Pin Grid Array Package) chip.Iphinikhodi ngayinye yohlelo oluyisikwele ihlelwe ebangeni elithile eduze kwe-chip.Ngokuya ngenani lezikhonkwane, lingakhiwa libe yimibuthano emi-2 kuya kwemi-5.Ngesikhathi sokufakwa, vele ufake i-chip kusokhethi ekhethekile ye-PGA.Inezinzuzo zokuxhuma kalula nokukhipha i-plug kanye nokuthembeka okuphezulu, futhi ingakwazi ukuzivumelanisa namafrikhwensi aphezulu.
Isitayela sephakheji ye-PGA
Iningi lama-chip substrates ayo enziwe ngezinto zobumba, kanti amanye asebenzisa inhlaka yepulasitiki ekhethekile njenge-substrate.Ngokuphathelene nobuchwepheshe, ibanga lesikhungo sephini livamise ukuba ngu-2.54mm, kanti inani lezikhonkwane lisukela ku-64 kuya ku-447. Isici salolu hlobo lokupakisha ukuthi indawo yokupakisha (ivolumu) incane, ukusetshenziswa kwamandla kuyancipha (ukusebenza). ) ingamelana, futhi ngokuphambene.Lesi sitayela sokupakisha sama-chips sasivame kakhulu ezinsukwini zokuqala, futhi sasisetshenziselwa kakhulu ukupakisha imikhiqizo esetshenziswa amandla aphezulu njengama-CPU.Isibonelo, i-Intel's 80486 nePentium zonke zisebenzisa lesi sitayela sokupakisha;ayamukelwa kabanzi ngabakhiqizi be-MOSFET.
4. Iphakheji elincane le-Outline Transistor (SOT)
I-SOT (I-Small Out-Line Transistor) iwuhlobo lwesichibi sephakeji yamandla amancane we-transistor, ikakhulukazi i-SOT23, SOT89, SOT143, SOT25 (okungukuthi, SOT23-5), njll. SOT323, SOT363/SOT26 (okungukuthi SOT23-6) nezinye izinhlobo ziyi etholiwe, emincane ngosayizi kunamaphakheji we-TO.
Uhlobo lwephakheji ye-SOT
I-SOT23 iyiphakheji ye-transistor evame ukusetshenziswa enezikhonkwane ezintathu ezimise okwephiko, okungukuthi umqoqi, i-emitter kanye nesisekelo, ezisohlwini lwezinhlangothi zombili zohlangothi olude lwengxenye.Phakathi kwazo, i-emitter nesisekelo zisehlangothini olufanayo.Zivamile kuma-transistors anamandla aphansi, ama-transistors we-field effect kanye nama-transistors ayinhlanganisela anamanethiwekhi aphikisayo.Banamandla amahle kodwa i-solderability impofu.Ukubukeka kuboniswe kuMfanekiso (a) ngezansi.
I-SOT89 inamaphini amathathu amafushane asatshalaliswe ohlangothini olulodwa lwe-transistor.Olunye uhlangothi isinki yokushisa yensimbi exhunywe kusisekelo ukuze kwandiswe amandla okukhipha ukushisa.Kujwayelekile kuma-silicon power surface Mount transistors futhi ifanele ukusetshenziswa kwamandla aphezulu.Ukubukeka kuboniswe kuMfanekiso (b) ngezansi..
I-SOT143 inezikhonkwane ezine ezimise okwezimpiko ezine ezimfushane, ezikhishwe nhlangothi zombili.Umkhawulo obanzi wephinikhodi umqoqi.Lolu hlobo lwephakheji luvamile kuma-high-frequency transistors, futhi ukubonakala kwalo kuboniswe kuMfanekiso (c) ngezansi..
I-SOT252 iyi-transistor enamandla amakhulu enamaphini amathathu aholela ohlangothini olulodwa, kanti iphinikhodi ephakathi yimfushane futhi ingumqoqi.Xhuma kuphini elikhudlwana ngakolunye uhlangothi, okuyishidi lethusi lokukhipha ukushisa, futhi ukubukeka kwalo kunjengoba kukhonjisiwe kuMfanekiso (d) ngezansi.
Ukuqhathanisa okujwayelekile kwephakheji ye-SOT
I-SOT-89 MOSFET enamatheminali amane ivamise ukusetshenziswa kumabhodi omama.Ukucaciswa kwayo kanye nobukhulu bumi kanje:
Ukucaciswa kosayizi we-SOT-89 MOSFET (iyunithi: mm)
5. Iphakheji Yohlaka Oluncane (SOP)
I-SOP (Iphakheji Encane Ephuma Emgqeni) ingenye yamaphakheji angaphezulu, ebizwa nangokuthi i-SOL noma i-DFP.Izikhonkwane zikhishwa ezinhlangothini zombili zephakeji ngendlela yephiko le-seagull shape (L shape).Izinto zokwakha ziyipulasitiki ne-ceramic.Izindinganiso zokupakisha ze-SOP zifaka i-SOP-8, SOP-16, SOP-20, SOP-28, njll. Inombolo engemva kwe-SOP ikhombisa inani lamaphini.Amaphakheji amaningi e-MOSFET SOP asebenzisa ukucaciswa kwe-SOP-8.Imboni ivamise ukushiya u-"P" bese iyifushanisa ngokuthi SO (Small Out-Line).
SOP-8 usayizi wephakheji
I-SO-8 yasungulwa okokuqala yi-PHILIP Company.Ipakishwe ngepulasitiki, ayinalo ipuleti elingaphansi lokukhipha ukushisa, futhi alinakho ukushisisa kahle.Ngokuvamile isetshenziselwa ama-MOSFET anamandla aphansi.Kamuva, ukucaciswa okujwayelekile okufana ne-TSOP (Iphakheji Lohlaka Oluncane Oluncane), i-VSOP (Iphakheji Lohlaka Oluncane Kakhulu), i-SSOP (Nciphisa I-SOP), i-TSSOP (I-Thin Shrink SOP), njll.phakathi kwazo, i-TSOP ne-TSSOP zivame ukusetshenziswa emaphaketheni e-MOSFET.
Ukucaciswa kwe-SOP okuvame ukusetshenziselwa ama-MOSFET
6. Iphakheji le-Quad Flat (QFP)
Ibanga phakathi kwamaphini we-chip kuphakheji le-QFP (Plastic Quad Flat Package) lincane kakhulu futhi izikhonkwane zincane kakhulu.Ngokuvamile isetshenziswa kumasekhethi ahlanganisiwe amakhulu noma amakhulu kakhulu, futhi inani lamaphini ngokuvamile lingaphezu kuka-100. Ama-chips apakishwe ngaleli fomu kufanele asebenzise ubuchwepheshe bokukhweza phezulu be-SMT ukuze kudayiswe i-chip ebhodini lomama.Le ndlela yokupakisha inezici ezine ezinkulu: ① Ifanele ubuchwepheshe bokukhweza phezulu kwe-SMD ukufaka izintambo kumabhodi wesekethe e-PCB;② Ilungele ukusetshenziswa kwe-high-frequency;③ Kulula ukusebenza futhi inokwethenjelwa okuphezulu;④ Isilinganiso phakathi kwendawo ye-chip nendawo yokupakisha sincane.Njengendlela yokupakisha ye-PGA, le ndlela yokupakisha isonga i-chip ngephakheji yepulasitiki futhi ayikwazi ukuqeda ukushisa okukhiqizwa lapho chip isebenza ngesikhathi.Ikhawulela ukwenziwa ngcono kokusebenza kwe-MOSFET;futhi ukupakishwa kwepulasitiki ngokwayo kwandisa usayizi wedivayisi, engahlangabezani nezidingo zokuthuthukiswa kwama-semiconductors ekuqondeni kokukhanya, okuncane, okufushane, nokuncane.Ngaphezu kwalokho, lolu hlobo lwendlela yokupakisha lusekelwe ku-chip eyodwa, enezinkinga zokusebenza kahle kokukhiqiza okuphansi kanye nezindleko eziphezulu zokupakisha.Ngakho-ke, i-QFP ifaneleka kakhulu ukuthi isetshenziswe kumasekhethi e-LSI anengqondo yedijithali njengama-microprocessors/amalungu afanayo amasango, futhi ifanele ukupakishwa kwemikhiqizo yesekethe ye-analog LSI efana nokucubungula isignali ye-VTR nokucubungula isignali yomsindo.
7, Iphakethe le-Quad flat elingenawo umkhondo (QFN)
Iphakheji ye-QFN (Quad Flat Non-leaded) ifakwe othintana nabo be-electrode kuzo zonke izinhlangothi ezine.Njengoba ingekho imikhondo, indawo yokukhweza incane kune-QFP futhi ukuphakama kungaphansi kune-QFP.Phakathi kwazo, i-ceramic QFN ibizwa nangokuthi i-LCC (Leadless Chip Carriers), kanti ipulasitiki eshibhile i-QFN isebenzisa i-glass epoxy resin ephrintiwe substrate base material ibizwa nge-plastic LCC, PCLC, P-LCC, njll. ubuchwepheshe obunosayizi omncane wephedi, umthamo omncane, kanye nepulasitiki njengento yokuvala uphawu.I-QFN isetshenziselwa kakhulu ukupakishwa kwesekethe edidiyelwe, futhi i-MOSFET ngeke isetshenziswe.Nokho, ngenxa yokuthi i-Intel ihlongoze umshayeli ohlanganisiwe nesixazululo se-MOSFET, yethule i-DrMOS kuphakheji ye-QFN-56 ("56" isho izikhonkwane zokuxhuma ezingama-56 ngemuva kwe-chip).
Kufanele kuqashelwe ukuthi iphakheji ye-QFN inokucushwa kokuhola okufanayo kwangaphandle njengephakheji ye-ultra-thin small outline package (TSSOP), kodwa ubukhulu bayo buncane ngo-62% kune-TSSOP.Ngokwedatha yokumodela ye-QFN, ukusebenza kwayo okushisayo kuphakeme ngo-55% kunokwamaphakheji we-TSSOP, futhi ukusebenza kwawo kukagesi (i-inductance namandla) kuphakeme ngo-60% no-30% ngaphezu kokupakishwa kwe-TSSOP ngokulandelanayo.Ububi obukhulu kakhulu ukuthi kunzima ukukhanda.
I-DrMOS kuphakheji ye-QFN-56
Ukunikezwa kwamandla okushintshashintshayo okungokwesiko kwe-DC/DC okusuka phansi akukwazi ukuhlangabezana nezimfuneko zokuminyana kwamandla aphezulu, futhi ayikwazi ukuxazulula inkinga yemiphumela yepharamitha yepharamitha kumafrikhwensi okushintsha okuphezulu.Ngokusungulwa nokuthuthuka kobuchwepheshe, sekuyinto engokoqobo ukuhlanganisa abashayeli nama-MOSFET ukuze kwakhiwe amamojula ama-chip amaningi.Le ndlela yokuhlanganisa ingasindisa isikhala esikhulu futhi ikhulise ukuminyana kokusetshenziswa kwamandla.Ngokwenza kahle kwabashayeli nama-MOSFET, sekuyinto engokoqobo.Ukusebenza kahle kwamandla kanye nekhwalithi ephezulu ye-DC yamanje, lena umshayeli ohlanganisiwe we-DrMOS IC.
I-Renesas 2nd generation DrMOS
Iphakeji le-QFN-56 elingaholi lenza ukuthi i-DrMOS eshisayo ibe phansi kakhulu;nge-internal wire bonding kanye ne-copper clip design, izintambo ze-PCB zangaphandle zingancishiswa, ngaleyo ndlela kuncishiswe inductance nokumelana.Ngaphezu kwalokho, inqubo ye-silicon MOSFET ejulile yesiteshi esetshenziswayo nayo inganciphisa kakhulu ukulahleka kokuqhutshwa, ukushintsha nokushaja kwesango;ihambisana nezilawuli ezihlukahlukene, ingafinyelela izindlela zokusebenza ezihlukene, futhi isekela imodi yokuguqula yesigaba esisebenzayo i-APS (I-Auto Phase Switching).Ngokungeziwe ekufakweni kwe-QFN, ukupakishwa kwe-bilateral flat no-lead (DFN) kuyinqubo entsha yokupakisha ye-elekthronikhi esetshenziswe kabanzi ezingxenyeni ezihlukahlukene ze-ON Semiconductor.Uma kuqhathaniswa ne-QFN, i-DFN inama-electrode aholayo ambalwa nhlangothi zombili.
8. I-Plastic Leaded Chip Carrier (PLCC)
I-PLCC (I-Plastic Quad Flat Package) inomumo oyisikwele futhi incane kakhulu kunephakheji ye-DIP.Inamaphini angu-32 anamaphini nxazonke.Izikhonkwane zikhishwa ezinhlangothini ezine zephakeji ngendlela ye-T.Kungumkhiqizo wepulasitiki.Ibanga lesikhungo sephini liyi-1.27mm, futhi inani lezikhonkwane lisukela ku-18 kuya ku-84. Izikhonkwane ezimise okwe-J azikhubazeki kalula futhi kulula ukuzisebenzisa kune-QFP, kodwa ukuhlolwa kokubukeka ngemva kokushisela kunzima kakhulu.Ukupakishwa kwe-PLCC kulungele ukufaka izintambo ku-PCB kusetshenziswa ubuchwepheshe bokukhweza ubuso be-SMT.Inezinzuzo zesayizi encane nokuthembeka okuphezulu.Ukupakishwa kwe-PLCC kuvamile futhi kusetshenziswa ku-logic LSI, DLD (noma idivayisi ye-logic yohlelo) nakwamanye amasekhethi.Leli fomu lokupakisha livame ukusetshenziswa ku-BIOS yebhodi lomama, kodwa okwamanje alivamile kangako kuma-MOSFET.
Ukuhlanganisa kanye nokwenza ngcono kwamabhizinisi ajwayelekile
Ngenxa yokuthuthuka kwamandla kagesi aphansi kanye namandla aphezulu kuma-CPU, ama-MOSFET adingeka ukuthi abe nokuphumayo okukhulu kwamanje, ukumelana nokuncane, ukukhiqiza ukushisa okuphansi, ukushabalaliswa kokushisa okusheshayo, nosayizi omncane.Ngaphezu kokuthuthukisa ubuchwepheshe nezinqubo zokukhiqiza ama-chip, abakhiqizi be-MOSFET bayaqhubeka nokuthuthukisa ubuchwepheshe bokupakisha.Ngokwesisekelo sokuhambisana nokucaciswa kokubukeka okujwayelekile, baphakamisa izimo zokupakisha ezintsha futhi babhalise amagama ophawu lwentengiso kumaphakheji amasha abawakhayo.
1, RENESAS WPAK, LFPAK kanye namaphakheji e-LFPAK-I
I-WPAK iphakethe lemisebe yokushisa ephezulu elakhiwe ngabakwaRenesas.Ngokulingisa iphakheji ye-D-PAK, usinki wokushisa we-chip ushiselwa ebhodini lomama, futhi ukushisa kukhishwa ngebhodi le-motherboard, ukuze iphakheji elincane le-WPAK likwazi ukufinyelela okwamanje okukhiphayo kwe-D-PAK.I-WPAK-D2 ipakisha ama-MOSFET amabili aphezulu/aphansi ukuze kuncishiswe i-wiring inductance.
Usayizi wephakheji we-Renesas WPAK
I-LFPAK ne-LFPAK-I amanye amaphakheji amancane amabili we-form-factor athuthukiswe yi-Renesas ahambisana ne-SO-8.I-LFPAK ifana ne-D-PAK, kodwa incane kune-D-PAK.I-LFPAK-i ibeka usinki wokushisa phezulu ukuze ukhiphe ukushisa kusinki wokushisa.
Amaphakheji we-Renesas LFPAK kanye ne-LFPAK-I
2. I-Vishay Power-PAK ne-Polar-PAK yokupakisha
I-Power-PAK igama lephakeji ye-MOSFET ebhaliswe yi-Vishay Corporation.I-Power-PAK ihlanganisa izici ezimbili: Power-PAK1212-8 kanye ne-Power-PAK SO-8.
Vishay Power-PAK1212-8 iphakheji
Vishay Power-PAK SO-8 iphakheji
I-Polar PAK iphakethe elincane elinokushisa okunezinhlangothi ezimbili futhi ingenye yobuchwepheshe bokupakisha obuyinhloko be-Vishay.I-Polar PAK iyafana nephakheji evamile ye-so-8.Inamaphuzu okulahla kuzo zombili izinhlangothi ezingenhla neziphansi zephakheji.Akulula ukuqongelela ukushisa ngaphakathi kwephakheji futhi kungakhuphula ukuminyana kwamanje kokusebenza kwamanje kuphindwe kabili kune-SO-8.Njengamanje, uVishay unelayisensi yobuchwepheshe be-Polar PAK ku-STMicroelectronics.
Iphakethe le-Vishay Polar PAK
3. Amaphakheji okuhola ayisicaba e-Onsemi SO-8 kanye ne-WDFN8
I-ON Semiconductor isungule izinhlobo ezimbili zama-MOSFETs ahamba phambili, phakathi kwawo ama-SO-8 ahambisana ne-flat-lead asetshenziswa amabhodi amaningi.KU-Semiconductor's Semiconductor's esanda kwethulwa i-NVMx kanye ne-NVTx power MOSFETs zisebenzisa i-compact DFN5 (SO-8FL) namaphakheji we-WDFN8 ukuze kuncishiswe ukulahleka kokuqhuba.Iphinde ibe ne-QG ephansi namandla okunciphisa ukulahlekelwa kwabashayeli.
KU-Semiconductor SO-8 Flat lead Package
KU-Semiconductor WDFN8 iphakheji
4. I-NXP LFPAK ne-QLPAK yokupakisha
I-NXP (owayekade eyiPhilps) ithuthukise ubuchwepheshe bokupakisha be-SO-8 ibe yi-LFPAK ne-QLPAK.Phakathi kwabo, i-LFPAK ibhekwa njengamandla athembekile kakhulu we-SO-8 iphakheji emhlabeni;kuyilapho i-QLPAK inezici zobukhulu obuncane nokusebenza kahle kokukhipha ukushisa okuphezulu.Uma kuqhathaniswa ne-SO-8 evamile, i-QLPAK ithatha indawo yebhodi le-PCB engu-6*5mm futhi inokumelana nokushisa okungu-1.5k/W.
Iphakheji ye-NXP LFPAK
Ukupakishwa kwe-NXP QLPAK
4. Iphakheji le-ST Semiconductor PowerSO-8
Ubuchwepheshe bokupakisha be-chip ye-STMicroelectronics be-MOSFET buhlanganisa i-SO-8, i-PowerSO-8, i-PowerFLAT, i-DirectFET, i-PolarPAK, njll. Phakathi kwabo, i-Power SO-8 inguqulo ethuthukisiwe ye-SO-8.Ngaphezu kwalokho, kukhona i-PowerSO-10, PowerSO-20, TO-220FP, H2PAK-2 namanye amaphakheji.
Iphakethe le-STMicroelectronics Power SO-8
5. Iphakheji ye-Fairchild Semiconductor Power 56
I-Power 56 igama elikhethekile lika-Farichild, futhi igama layo elisemthethweni yi-DFN5×6.Indawo yayo yokupakisha iqhathaniswa naleyo ye-TSOP-8 evame ukusetshenziswa, futhi iphakheji elincanyana ligcina ukuphakama kwesici sokugunyazwa, futhi umklamo we-Thermal-Pad ongezansi wehlisa ukumelana nokushisa.Ngakho-ke, abakhiqizi abaningi bemishini yamandla basebenzise i-DFN5×6.
Iphakethe le-Fairchild Power 56
6. Iphakheji ye-FET ye-International Rectifier (IR)
I-Direct FET ihlinzeka ngokupholisa okuphezulu okusebenzayo ku-SO-8 noma isigxivizo sonyawo esincane futhi ilungele izinhlelo zokusebenza zokuguqula amandla e-AC-DC kanye ne-DC-DC kumakhompyutha, amakhompyutha aphathekayo, ezokuxhumana kanye namathuluzi kagesi omthengi.Ukwakhiwa kwensimbi ye-DirectFET kuhlinzeka ngokuncibilika kokushisa okunezinhlangothi ezimbili, okuphinda kabili amandla amanje okubamba ama-high-frequency DC-DC buck converters uma kuqhathaniswa namaphakheji avamile epulasitiki.Iphakheji ye-Direct FET iwuhlobo olufakwe emuva, elinesinki sokushisa esidonsa amanzi (D) sibheke phezulu futhi simbozwe ngegobolondo lensimbi, okuchithwa ngalo ukushisa.Ukupakisha okuqondile kwe-FET kuthuthukisa kakhulu ukunqanyulwa kokushisa futhi kuthatha isikhala esincane ngokukhipha ukushisa okuhle.
Fingqa
Ngokuzayo, njengoba imboni yokukhiqiza nge-elekthronikhi iqhubeka nokuthuthuka ibheke ku-ultra-thin, miniaturization, i-voltage ephansi, kanye namandla aphezulu, ukubukeka kanye nesakhiwo sangaphakathi sokupakisha se-MOSFET nakho kuzoshintsha ukuze kuzivumelanise kangcono nezidingo zentuthuko yokukhiqiza. imboni.Ngaphezu kwalokho, ukuze kwehliswe umkhawulo wokukhethwa kwabakhiqizi be-elekthronikhi, inkambiso yokuthuthukiswa kwe-MOSFET ekuqondeni kwe-modularization kanye nokupakishwa kwezinga lesistimu izoba sobala kakhulu, futhi imikhiqizo izothuthuka ngendlela ehlelekile isuka kubukhulu obuningi obunjengokusebenza nezindleko. .Iphakheji ingesinye sezici ezibalulekile zokubhekisela ekukhethweni kwe-MOSFET.Imikhiqizo ehlukene ye-elekthronikhi inezidingo ezihlukile zikagesi, futhi izindawo ezihlukene zokufakela nazo zidinga ukucaciswa kosayizi ofanayo ukuze kuhlangatshezwane nazo.Ekukhetheni kwangempela, isinqumo kufanele senziwe ngokuvumelana nezidingo zangempela ngaphansi komgomo jikelele.Amanye amasistimu kagesi anqunyelwe usayizi we-PCB nobude bangaphakathi.Isibonelo, amandla emojula wezinhlelo zokuxhumana ngokuvamile zisebenzisa amaphakheji e-DFN5*6 kanye ne-DFN3*3 ngenxa yemikhawulo yobude;kwezinye izinsiza zamandla e-ACDC, imiklamo emincane kakhulu noma ngenxa yemikhawulo yegobolondo ifanele ukuhlanganisa ama-MOSFET wamandla ahlanganisiwe angu-TO220.Ngalesi sikhathi, izikhonkwane zingafakwa ngokuqondile empandeni, engafaneleki imikhiqizo ehlanganisiwe ye-TO247;amanye amadizayini azacile kakhulu adinga ukuthi izikhonkwane zedivayisi zigotshwe futhi zibekwe phansi, okuzokhuphula inkimbinkimbi yokukhethwa kwe-MOSFET.
Indlela yokukhetha i-MOSFET
Unjiniyela wake wangitshela ukuthi akakaze abheke ikhasi lokuqala le-data sheet ye-MOSFET ngoba ulwazi "olusebenzayo" luvela ekhasini lesibili nangaphezulu.Cishe wonke amakhasi eshidini ledatha le-MOSFET liqukethe ulwazi olubalulekile lwabaklami.Kodwa akuhlale kucacile ukuthi ichazwa kanjani idatha enikezwe abakhiqizi.
Lesi sihloko sichaza ezinye zezici ezibalulekile zama-MOSFET, ukuthi zishiwo kanjani kudathabhethi, kanye nesithombe esicacile okudingeka uziqonde.Njengamadivaysi amaningi kagesi, ama-MOSFET athintwa izinga lokushisa lokusebenza.Ngakho-ke kubalulekile ukuqonda izimo zokuhlola lapho izinkomba ezibaluliwe zisetshenziswa khona.Kubalulekile futhi ukuqonda ukuthi izinkomba ozibona "Esethulweni Somkhiqizo" zingamanani "aphezulu" noma "ajwayelekile", ngoba amanye amashidi edatha awakwenzi kucace.
Ibanga le-voltage
Isici esiyinhloko esinquma i-MOSFET amandla ayo omthombo we-drain-source VDS, noma "i-drain-source breakdown voltage", okuyi-voltage ephakeme kakhulu i-MOSFET engakwazi ukumelana nayo ngaphandle kokulimala lapho isango lifinyezwa emthonjeni kanye ne-drain current. ngi 250μA..I-VDS ibizwa nangokuthi "i-voltage ephezulu kakhulu ku-25 ° C", kodwa kubalulekile ukukhumbula ukuthi le voltheji ephelele incike ekushiseni, futhi ngokuvamile kukhona "i-coefficient ye-VDS yokushisa" eshidini ledatha.Kudingeka futhi uqonde ukuthi i-VDS ephezulu i-voltage ye-DC kanye nanoma yiziphi izinsimbi zama-voltage nama-ripples okungenzeka akhona kusekethe.Isibonelo, uma usebenzisa idivayisi engu-30V kugesi ongu-30V ene-100mV, 5ns spike, i-voltage izodlula umkhawulo ophelele wedivayisi futhi idivayisi ingase ingene kumodi ye-avalanche.Kulokhu, ukwethembeka kwe-MOSFET akunakuqinisekiswa.Emazingeni okushisa aphezulu, i-coefficient yokushisa ingashintsha kakhulu i-voltage yokuwohloka.Isibonelo, amanye ama-MOSFET wesiteshi se-N anesilinganiso sikagesi esingu-600V ane-coefficient yezinga lokushisa elihle.Njengoba besondela kumazinga okushisa aphezulu okuhlangana kwawo, izinga lokushisa libangela la ma-MOSFET ukuthi aziphathe njengama-MOSFET angu-650V.Imithetho yokuklama yabasebenzisi abaningi be-MOSFET idinga isici esincishiswayo sika-10% kuya ku-20%.Kweminye imiklamo, uma kucatshangelwa ukuthi i-voltage yangempela yokuwohloka iphezulu ngo-5% kuya ku-10% kunevelu elinganiselwe ku-25°C, umkhawulo womklamo owusizo ohambisanayo uzokwengezwa ekwakhiweni kwangempela, okuzuzisa kakhulu kumklamo.Okubaluleke ngokufanayo ekukhetheni okulungile kwama-MOSFET ukuqonda indima ye-voltage yesango yomthombo we-VGS phakathi nenqubo yokuqhuba.La mandla kagesi ivoltheji eqinisekisa ukuqhutshwa okugcwele kwe-MOSFET ngaphansi kwesimo se-RDS(on) esiphezulu esinikeziwe.Yingakho i-on-resistance ihlale ihlobene nezinga le-VGS, futhi kungale voltage kuphela lapho idivayisi ingavulwa khona.Umphumela obalulekile wokuklama ukuthi awukwazi ukuvula i-MOSFET ngokugcwele nge-voltage ephansi kune-VGS encane esetshenziselwa ukuzuza isilinganiso se-RDS(on).Isibonelo, ukuze uvule i-MOSFET ngokugcwele ngesilawuli esincane esingu-3.3V, udinga ukwazi ukuvula i-MOSFET ku-VGS=2.5V noma ngaphansi.
Ukumelana nokumelana, ukushaja kwesango, kanye "nesibalo sokufaneleka"
Ukumelana nokumelana kwe-MOSFET kuhlala kunqunywa kuvolthigethi eyodwa noma ngaphezulu yesango ukuya emthonjeni.Umkhawulo omkhulu we-RDS(uvuliwe) ungaba ngo-20% ukuya ku-50% ngaphezu kwevelu evamile.Umkhawulo omkhulu we-RDS(uvuliwe) uvame ukusho inani ezingeni lokushisa lenhlanganiso elingu-25°C.Emazingeni okushisa aphezulu, i-RDS(ivuliwe) inganyuka ngo-30% iye ku-150%, njengoba kuboniswe kuMfanekiso 1. Njengoba i-RDS(ivuliwe) ishintsha ngezinga lokushisa kanye nenani elincane lokumelana lingenakuqinisekiswa, ukuthola okwamanje okusekelwe ku-RDS(on) akukwazi ukuqinisekiswa. indlela enembe kakhulu.
Umfanekiso 1 RDS(uvuliwe) ukhuphuka ngezinga lokushisa ebangeni elingama-30% ukuya ku-150% wezinga eliphezulu lokushisa lokusebenza.
Ukumelana nakho kubaluleke kakhulu kukho kokubili i-N-channel kanye ne-P-channel MOSFETs.Ekushintsheni okuphakelwayo kwamandla, i-Qg iwumgomo oyinhloko wokukhetha wama-MOSFET wesiteshi se-N asetshenziswa ekushintsheni amandla kagesi ngoba i-Qg ithinta ukulahlekelwa kokushintsha.Lokhu kulahlekelwa kunemiphumela emibili: eyodwa isikhathi sokushintsha esithinta ukuvula nokuvala i-MOSFET;enye ingamandla adingekayo ukushaja i-capacitance yesango phakathi nenqubo ngayinye yokushintsha.Into eyodwa okufanele uyikhumbule ukuthi i-Qg incike ku-voltage yomthombo wesango, noma ngabe ukusebenzisa i-Vgs ephansi kunciphisa ukulahlekelwa kokushintsha.Njengendlela esheshayo yokuqhathanisa ama-MOSFET ahloselwe ukusetshenziswa ekushintsheni izinhlelo zokusebenza, abaklami bavame ukusebenzisa ifomula eyodwa ehlanganisa i-RDS(on) yokulahlekelwa kokuqhuba kanye ne-Qg yokushintsha ukulahlekelwa: i-RDS(on)xQg.Le "figure of merit" (FOM) ifingqa ukusebenza kwedivayisi futhi ivumela ama-MOSFET ukuthi aqhathaniswe ngokwamanani ajwayelekile noma aphezulu.Ukuqinisekisa ukuqhathanisa okunembile kuwo wonke amadivayisi, udinga ukwenza isiqiniseko sokuthi i-VGS efanayo isetshenziselwa i-RDS(on) ne-Qg, nokuthi amanani ajwayelekile kanye nomkhawulo awenzi ahlanganiswe ndawonye ekushicilelweni.I-FOM ephansi izokunikeza ukusebenza okungcono ekushintsheni izinhlelo zokusebenza, kodwa ayiqinisekisiwe.Imiphumela engcono kakhulu yokuqhathanisa ingatholakala kuphela kumjikelezo wangempela, futhi kwezinye izimo isekethe ingase idinge ukucutshungulwa kahle ku-MOSFET ngayinye.Isilinganiso sokushabalaliswa kwamandla kwamanje namandla, ngokusekelwe ezimeni zokuhlola ezihlukene, ama-MOSFET amaningi anomthamo owodwa noma ngaphezulu oqhubekayo eshidini ledatha.Uzofuna ukubheka ishidi ledatha ngokucophelela ukuze uthole ukuthi isilinganiso sikwizinga lokushisa elishiwo lesimo (isb. TC=25°C), noma izinga lokushisa le-ambient (isb. TA=25°C).Imaphi kulawa manani afaneleka kakhulu azoncika ezicini zedivayisi kanye nohlelo lokusebenza (bheka uMdwebo 2).
Umfanekiso 2 Wonke amanani aphezulu wamanje namandla ayidatha yangempela
Kumadivayisi amancane okukhweza asetshenziswa kumadivayisi aphathwa ngesandla, ileveli yamanje efaneleka kakhulu ingase ibe yileyo ekuzinga lokushisa kwe-ambient elingu-70°C.Okokusebenza okukhulu okunamasinki okushisa nokupholisa komoya okuphoqelekile, ileveli yamanje kokuthi TA=25℃ ingase isondele esimweni sangempela.Kwamanye amadivaysi, i-die ingakwazi ukuphatha okwamanje kakhulu ezingeni lokushisa layo eliphezulu le-junction kunemikhawulo yephakheji.Kwamanye amashidi edatha, le leveli yamanje "ye-die-limited" iwulwazi olwengeziwe lweleveli yamanje "enomkhawulo wephakheji", engakunikeza umbono wokuqina kwedayizi.Ukucatshangelwa okufanayo kuyasebenza ekulahlekeni kwamandla okuqhubekayo, okungancikile kuphela ezingeni lokushisa kodwa nangesikhathi.Cabanga ngedivayisi esebenza ngokuqhubekayo ku-PD=4W imizuzwana engu-10 ku-TA=70℃.Okwakha isikhathi "esiqhubekayo" kuzohluka ngokuya ngephakeji ye-MOSFET, ngakho-ke uzofuna ukusebenzisa isakhiwo esijwayelekile esishisayo se-impedance kusuka kudatha yedatha ukuze ubone ukuthi ukuchithwa kwamandla kubukeka kanjani ngemuva kwemizuzwana eyi-10, imizuzwana eyi-100, noma imizuzu eyi-10. .Njengoba kuboniswe kuMfanekiso 3, i-coefficient yokumelana nokushisa yale divayisi ekhethekile ngemva kokushaya kwemizuzwana eyi-10 icishe ibe ngu-0.33, okusho ukuthi uma iphakheji selifinyelele ekugcwaleni okushisayo cishe ngemva kwemizuzu eyi-10, amandla okukhipha ukushisa kwedivayisi angu-1.33W kuphela esikhundleni sika-4W. .Nakuba amandla okukhipha ukushisa kwedivayisi angafinyelela cishe ku-2W ngaphansi kokupholisa okuhle.
Umfanekiso 3 Ukumelana nokushisa kwe-MOSFET lapho kusetshenziswa ukushaya kwamandla
Eqinisweni, singahlukanisa indlela yokukhetha i-MOSFET ngezinyathelo ezine.
Isinyathelo sokuqala: khetha isiteshi esingu-N noma isiteshi esingu-P
Isinyathelo sokuqala ekukhetheni idivayisi efanele umklamo wakho ukunquma ukuthi usebenzise i-N-channel noma i-P-channel MOSFET.Kuhlelo lwamandla olujwayelekile, lapho i-MOSFET ixhunywe phansi futhi umthwalo uxhunywe ku-voltage yamapayipi, i-MOSFET yenza iswishi yohlangothi oluphansi.Kuswishi yezinhlangothi eziphansi, ama-MOSFET wesiteshi se-N kufanele asetshenziswe ngenxa yokucatshangelwa kwamandla kagesi adingekayo ukuze kucishwe noma kuvule idivayisi.Uma i-MOSFET ixhunywe ebhasini futhi ilayisha phansi, kusetshenziswa inkinobho yohlangothi oluphezulu.Ama-MOSFET esiteshi se-P avame ukusetshenziswa kule topology, okubuye kube ngenxa yokucatshangelwa kwe-voltage drive.Ukuze ukhethe idivayisi elungile yohlelo lwakho lokusebenza, kufanele unqume amandla kagesi adingekayo ukuze ushayele idivayisi kanye nendlela elula yokukwenza ekwakhiweni kwakho.Isinyathelo esilandelayo ukunquma isilinganiso se-voltage esidingekayo, noma ubukhulu be-voltage idivayisi engakwazi ukumelana nayo.Uma siphezulu isilinganiso sikagesi, izindleko zedivayisi ziphezulu.Ngokusho kokuhlangenwe nakho okungokoqobo, i-voltage elinganiselwe kufanele ibe nkulu kune-voltage yamapayipi amakhulu noma ibhasi.Lokhu kuzonikeza ukuvikeleka okwanele ukuze i-MOSFET ingaphumeleli.Lapho ukhetha i-MOSFET, kuyadingeka ukucacisa i-voltage ephezulu engabekezelelwa kusuka ku-drain kuya emthonjeni, okungukuthi, i-VDS ephezulu.Kubalulekile ukwazi ukuthi i-voltage ephezulu i-MOSFET ingakwazi ukumelana nezinguquko nezinga lokushisa.Abaklami kufanele bahlole ukuhluka kwamandla kagesi kulo lonke ibanga lokushisa lokusebenza.I-voltage elinganiselwe kufanele ibe nemajini eyanele ukumboza lolu hlu lokwehluka ukuze kuqinisekiswe ukuthi isifunda ngeke sehluleke.Ezinye izici zokuphepha onjiniyela bokuklama okudingeka bazicabangele zihlanganisa ama-voltage transients enziwa ukushintsha izinto zikagesi ezifana namamotho noma ama-transformer.Ama-voltage alinganisiwe ayahluka ezinhlelweni ezahlukene;ngokuvamile, i-20V yamadivayisi aphathwayo, 20-30V yezinsiza zamandla ze-FPGA, kanye ne-450-600V yezinhlelo zokusebenza ezingu-85-220VAC.
Isinyathelo sesi-2: Thola isilinganiso samanje
Isinyathelo sesibili ukukhetha isilinganiso samanje se-MOSFET.Ngokuya ngokucushwa kwesifunda, lesi samanje esilinganiselwe kufanele sibe umkhawulo wamanje umthwalo ongamelana nawo ngaphansi kwazo zonke izimo.Ngokufanayo nesimo se-voltage, umklami kufanele aqinisekise ukuthi i-MOSFET ekhethiwe ingakwazi ukumelana nalesi silinganiso samanje, ngisho noma isistimu ikhiqiza ama-spikes amanje.Izimo ezimbili zamanje ezicatshangelwayo imodi eqhubekayo kanye ne-pulse spike.Kumodi yokuqhuba eqhubekayo, i-MOSFET isesimweni esingashintshi, lapho okwamanje kugeleza ngokuqhubekayo kudivayisi.I-pulse spike isho ukuqhuma okukhulu (noma i-spike current) egeleza ocingweni.Uma inani eliphezulu lamanje ngaphansi kwalezi zimo selinqunyiwe, kumane nje kuyindaba yokukhetha idivayisi engakwazi ukuphatha lesi sibalo esiphezulu samanje.Ngemva kokukhetha i-current rated, ukulahlekelwa kokuqhuba kufanele kubalwe.Ezimweni zangempela, i-MOSFET ayilona idivayisi efanelekile ngoba kukhona ukulahleka kwamandla kagesi ngesikhathi senqubo yokuqhuba, okubizwa ngokuthi ukulahlekelwa kwe-conduction.I-MOSFET iziphathisa okokumelana okuguquguqukayo lapho "ivuliwe", enqunywa i-RDS(ON) yedivayisi futhi ishintsha kakhulu ngezinga lokushisa.Ukulahleka kwamandla kwedivayisi kungabalwa nge-Iload2×RDS(ON).Njengoba ukumelana nokumelana kushintsha nezinga lokushisa, ukulahleka kwamandla nakho kuzoshintsha ngokulinganayo.Uma iphezulu i-voltage VGS esetshenziswa ku-MOSFET, i-RDS(ON) izoba mancane;ngokuphambene, i-RDS(ON) izoba phezulu.Kumklami wesistimu, kulapho ukuhweba kungena khona kuye nge-voltage yesistimu.Ngemiklamo ephathekayo, kulula (futhi kuvame kakhulu) ukusebenzisa ama-voltage aphansi, kuyilapho imiklamo yezimboni, ama-voltages aphezulu angasetshenziswa.Qaphela ukuthi ukumelana ne-RDS(ON) kuzokhuphuka kancane ngokwamanje.Ukwehluka kumapharamitha ahlukahlukene kagesi we-RDS(ON) resistor kungatholakala eshidini ledatha yobuchwepheshe elinikezwe umenzi.Ubuchwepheshe bunomthelela omkhulu ezicini zedivayisi, ngoba obunye ubuchwepheshe buvamise ukukhuphula i-RDS(ON) lapho kukhushulwa i-VDS ephezulu.Ngobuchwepheshe obunjalo, uma uhlose ukunciphisa i-VDS ne-RDS(ON), kufanele ukhuphule usayizi we-chip, ngaleyo ndlela wandise usayizi wephakheji ofanayo kanye nezindleko zokuthuthukisa ezihlobene.Kunobuchwepheshe obuningana embonini obuzama ukulawula ukwanda kosayizi we-chip, okubaluleke kakhulu okuwubuchwepheshe bokulinganisa amashaneli kanye nokushaja.Kubuchwepheshe bomsele, umsele ojulile ushunyekwa ku-wafer, ngokuvamile ubekelwe ama-voltage aphansi, ukuze kuncishiswe i-RDS(ON) yokungamelani.Ukuze kwehliswe umthelela we-VDS ephezulu ku-RDS(ON), inqubo yekholomu yokukhula kwe-epitaxial/etching isetshenziswe phakathi nenqubo yokuthuthukisa.Isibonelo, i-Fairchild Semiconductor ithuthukise ubuchwepheshe obubizwa nge-SuperFET obungeza izinyathelo zokukhiqiza ezengeziwe zokunciphisa i-RDS(ON).Lokhu kugxila ku-RDS(ON) kubalulekile ngoba njengoba i-voltage ehlukanayo ye-MOSFET ejwayelekile inyuka, i-RDS(ON) ikhuphuka kakhulu futhi iholela ekwenyukeni kosayizi wokufa.Inqubo ye-SuperFET ishintsha ubudlelwano bokuchayeka phakathi kwe-RDS(ON) nosayizi we-wafer bube ubudlelwano bomugqa.Ngale ndlela, amadivaysi e-SuperFET angakwazi ukuzuza i-RDS(ON) esezingeni eliphansi ngamasayizi amancane, ngisho nama-voltage okuqhekeka afika ku-600V.Umphumela uba ukuthi usayizi we-wafer ungancishiswa kuze kufike ku-35%.Kubasebenzisi bokugcina, lokhu kusho ukuncipha okukhulu kosayizi wephakheji.
Isinyathelo Sesithathu: Thola Izidingo Zokushisa
Isinyathelo esilandelayo ekukhetheni i-MOSFET ukubala izidingo ezishisayo zesistimu.Abaklami kufanele bacabangele izimo ezimbili ezihlukene, isimo esibi kakhulu kanye nesimo somhlaba wangempela.Kunconywa ukusebenzisa umphumela wokubala wesimo esibi kakhulu, ngoba lo mphumela uhlinzeka ngomkhawulo wokuphepha omkhulu futhi uqinisekisa ukuthi uhlelo ngeke lwehluleke.Kukhona futhi idatha yokulinganisa edinga ukunakwa eshidini ledatha le-MOSFET;njengokumelana nokushisa okuphakathi kokuhlangana kwe-semiconductor yedivayisi epakishiwe nendawo, kanye nezinga lokushisa eliphezulu lokuhlangana.Izinga lokushisa le-junction yedivayisi lilingana nezinga lokushisa eliphakeme kakhulu le-ambient kanye nomkhiqizo wokumelana nokushisa kanye nokuchithwa kwamandla (izinga lokushisa lokuhlangana = izinga lokushisa eliphakeme le-ambient + [ukumelana nokushisa × ukuchithwa kwamandla]).Ngokwalesi sibalo, ukuchithwa kwamandla okuphezulu kwesistimu kungaxazululwa, okulingana ne-I2×RDS(ON) ngencazelo.Njengoba umklami enqume inani eliphezulu lamanje elizodlula kudivayisi, i-RDS(ON) ingabalwa kumazinga okushisa ahlukene.Kuyaphawuleka ukuthi lapho usebenzisana namamodeli alula ashisayo, abaklami kufanele bacabangele umthamo oshisayo we-semiconductor junction/ikesi ledivayisi kanye necala/imvelo;lokhu kudinga ukuthi ibhodi lesifunda eliphrintiwe kanye nephakheji lingashisi ngokushesha.Ukuqhekeka kwe-avalanche kusho ukuthi i-voltage ebuyela emuva kudivayisi ye-semiconductor idlula inani eliphakeme futhi yakha inkambu eqinile kagesi ukuze kwandiswe amandla asebenza kudivayisi.Lokhu kwamanje kuzoqeda amandla, kwenyuse izinga lokushisa kwedivayisi, futhi ngokunokwenzeka konakalise idivayisi.Izinkampani ze-semiconductor zizohlola i-avalanche kumadivayisi, zibale i-avalanche voltage yazo, noma zihlole ukuqina kwedivayisi.Kunezindlela ezimbili zokubala ukulinganisa kwe-avalanche voltage;enye indlela yezibalo kanti enye iwukubala okushisayo.Ukubala okushisayo kusetshenziswa kakhulu ngoba kusebenza kakhulu.Izinkampani eziningi zinikeze imininingwane yokuhlolwa kwedivayisi yazo.Isibonelo, i-Fairchild Semiconductor inikeza "Iziqondiso ze-Avalanche zamandla e-MOSFET" (Iziqondiso ze-Avalanche zamandla e-MOSFET-zingalandwa kuwebhusayithi ye-Fairchild).Ngaphezu kwe-computing, ubuchwepheshe bubuye bube nomthelela omkhulu kumphumela we-avalanche.Isibonelo, ukukhuphuka kosayizi wokufa kukhulisa ukumelana ne-avalanche futhi ekugcineni kukhulisa ukuqina kwedivayisi.Kubasebenzisi bokugcina, lokhu kusho ukusebenzisa amaphakheji amakhulu ohlelweni.
Isinyathelo sesi-4: Nquma ukusebenza kweswishi
Isinyathelo sokugcina ekukhetheni i-MOSFET ukunquma ukusebenza kokushintsha kwe-MOSFET.Kunamapharamitha amaningi athinta ukusebenza kokushintsha, kodwa okubaluleke kakhulu yisango/ukukhipha amanzi, isango/umthombo kanye namandla okukhipha/umthombo.Lawa ma-capacitor adala ukulahleka kokushintsha kudivayisi ngoba akhokhiswa njalo uma eshintsha.Ngakho-ke ijubane lokushintsha le-MOSFET liyancishiswa, futhi ukusebenza kahle kwedivayisi nakho kuyancipha.Ukuze ubale ukulahlekelwa okuphelele kudivayisi ngesikhathi sokushintsha, umklami kufanele abale ukulahlekelwa ngesikhathi sokuvula (i-Eon) kanye nokulahlekelwa phakathi nokucisha (Eoff).Amandla aphelele weswishi ye-MOSFET angavezwa ngezibalo ezilandelayo: Psw=(Eon+Eoff)×imvamisa yokushintsha.Ukushajwa kwesango (Qgd) kunomthelela omkhulu ekushintsheni ukusebenza.Ngokusekelwe ekubalulekeni kokushintsha ukusebenza, ubuchwepheshe obusha buthuthukiswa njalo ukuxazulula le nkinga yokushintsha.Ukwenyuka kosayizi we-chip kukhulisa ukushaja kwesango;lokhu kwandisa usayizi wedivayisi.Ukuze kuncishiswe ukulahlekelwa kokushintsha, kuye kwavela ubuchwepheshe obusha obufana ne-channel thick bottom oxidation, okuhloswe ngayo ukunciphisa ukushaja kwesango.Isibonelo, ubuchwepheshe obusha be-SuperFET bunganciphisa ukulahleka kokuqhuba futhi buthuthukise ukusebenza kokushintsha ngokunciphisa i-RDS(ON) kanye nokushajwa kwesango (Qg).Ngale ndlela, ama-MOSFET angakwazi ukubhekana nokushintshashintsha kwamandla kagesi anesivinini esikhulu (i-dv/dt) kanye nama-transient amanje (di/dt) ngesikhathi sokushintshwa, futhi angasebenza ngisho nokwethembeka kumaza okushintsha aphezulu.
Isikhathi sokuthumela: Oct-23-2023
