Izikhonkwane ezintathu ze-MOSFET, ngingazihlukanisa kanjani?

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Izikhonkwane ezintathu ze-MOSFET, ngingazihlukanisa kanjani?

Ama-MOSFET (Field Effect Tubes) ngokuvamile anezikhonkwane ezintathu, Isango (G for short), Source (S for short) kanye ne-Drain (D ngamafuphi). Lezi zikhonkwane ezintathu zingahlukaniswa ngezindlela ezilandelayo:

Izikhonkwane ezintathu ze-MOSFET, ngingazihlukanisa kanjani

I. Iphinikhodi yokuhlonza

Isango (G):Ivame ukubizwa ngokuthi "G" noma ingabonakala ngokulinganisa ukumelana kwezinye izikhonkwane ezimbili, njengoba isango linomphumela ophakeme kakhulu esimweni esingenawo amandla futhi alixhunyiwe kakhulu kwezinye izikhonkwane ezimbili.

Umthombo (S):Ivamise ukubizwa ngokuthi "S" noma "S2", iphinikhodi yamanje yokungena futhi ngokuvamile ixhunywa kutheminali enegethivu ye-MOSFET.

Khipha amanzi (D):Ngokuvamile ibhalwe ukuthi "D", iyiphinikhodi yamanje futhi ixhunywe kutheminali ephozithivu yesekethe yangaphandle.

II. Phina Umsebenzi

Isango (G):Iphinikhodi eyisihluthulelo elawula ukushintshwa kwe-MOSFET, ngokulawula i-voltage esangweni ukuze ilawule ukuvula nokuvala i-MOSFET. Esimweni esingenawo amandla, i-impedance yesango ngokuvamile iphakeme kakhulu, ngaphandle kokuxhumana okubalulekile kwezinye izikhonkwane ezimbili.

Umthombo (S):iphinikhodi yamanje yokungena futhi ngokuvamile ixhunywa kutheminali enegethivu ye-MOSFET. Ku-NMOS, umthombo ngokuvamile usekelwe (GND); ku-PMOS, umthombo ungase uxhunywe ku-positive supply (VCC).

Khipha amanzi (D):Iphinikhodi yamanje futhi ixhunywe kutheminali ephozithivu yesekethe yangaphandle. Ku-NMOS, i-drain ixhunywe ku-positive supply (VCC) noma umthwalo; ku-PMOS, umsele uxhumeke emhlabathini (GND) noma ukulayisha.

III. Izindlela zokulinganisa

Sebenzisa i-multimeter:

Setha i-multimeter esimweni esifanele sokumelana (isb. R x 1k).

Sebenzisa itheminali enegethivu ye-multimeter exhunywe kunoma iyiphi i-electrode, elinye ipeni ukuze uthinte izigxobo ezimbili ezisele ngokushintshana, ukuze ulinganise ukumelana kwayo.

Uma amanani amabili okumelana alinganisiwe cishe alingana, ukuxhumana kwepeni okungalungile kwesango (G), ngoba isango nezinye izikhonkwane ezimbili phakathi kokumelana ngokuvamile zikhulu kakhulu.

Okulandelayo, i-multimeter izoshayelwa ku-R × 1 igiya, ipeni elimnyama lixhunywe emthonjeni (S), ipeni elibomvu elixhunywe ku-drain (D), inani lokumelana elilinganisiwe kufanele libe ama-ohm ambalwa kuya kuma-ohm amaningi, okubonisa. ukuthi umthombo nokukhipha amanzi phakathi kwezimo ezithile kungaba ukuqhutshwa.

Qaphela ukuhlelwa kwephinikhodi:

Kuma-MOSFET anohlelo lwephini elichazwe kahle (njengamanye amafomu ephakeji), indawo kanye nomsebenzi wephinikhodi ngayinye kunganqunywa ngokubheka umdwebo wokuhlelwa kwephinikhodi noma idatha yedatha.

IV. Izinyathelo zokuzivikela

Amamodeli ahlukene e-MOSFET angase abe nezinhlelo zamaphinikhodi ahlukene kanye nezimpawu, ngakho-ke kuhle kakhulu ukuthi ubheke idatha yedatha noma umdwebo wephakheji wemodeli ethile ngaphambi kokusetshenziswa.

 

Lapho ukala futhi uxhuma izikhonkwane, qiniseka ukuthi unaka ukuvikelwa kukagesi omile ukuze ugweme ukulimaza i-MOSFET.

 

Ama-MOSFET angamadivayisi alawulwa amandla kagesi anesivinini sokushintsha ngokushesha, kodwa ekusebenzeni okungokoqobo kusadingeka ukunaka ukwakheka nokusebenza kahle kwesekethe yokushayela ukuze kuqinisekiswe ukuthi i-MOSFET ingasebenza kahle nangokuthembekile.

 

Kafushane, izikhonkwane ezintathu ze-MOSFET zingahlukaniswa ngokunembile ngezindlela ezihlukahlukene ezifana nokuhlonza iphini, umsebenzi wephini kanye nezindlela zokulinganisa.


Isikhathi sokuthumela: Sep-19-2024