Ama-MOSFETdlala indimaekushintsheni izifundaukulawula umjikelezo wokuvula nokuvala kanye nokuguqulwa kwesignali.Ama-MOSFET zingahlukaniswa kabanzi zibe izigaba ezimbili: N-channel kanye P-channel.
Ku-N-channelI-MOSFETisifunda, iphinikhodi ye-BEEP iphakeme ukunika amandla impendulo ye-buzzer, futhi iphansi ukuze uvale i-buzzer.P-channelI-MOSFETukuze ulawule ukunikezwa kwamandla kwemojula ye-GPS kuvulwa noma kuvaliwe, iphinikhodi ye-GPS_PWR iphansi uma ivuliwe, imojula ye-GPS iphansi ukunikezwa kwamandla okujwayelekile, futhi iphakeme ukwenza imojuli ye-GPS ivaliwe.
Isiteshi se-PI-MOSFETku-substrate ye-silicon yohlobo lwe-N endaweni ye-P + inokubili: i-drain kanye nomthombo. Lezi zigxobo ezimbili azihambisani komunye nomunye, uma kukhona amandla ogesi anele angezwe emthonjeni lapho isekelwe, indawo ye-silicon yohlobo lwe-N ngaphansi kwesango izovela njengongqimba oluphambene lohlobo lwe-P, ibe isiteshi esixhuma i-drain kanye nomthombo. . Ukushintsha i-voltage esangweni kushintsha ukuminyana kwezimbobo esiteshini, ngaleyo ndlela kushintsha ukumelana nesiteshi. Lokhu kubizwa ngokuthi i-P-channel enhancement field effect transistor.
Izici ze-NMOS, ama-Vgs inqobo nje uma kusekhona inani elikhulu kunevelu elithile, elisebenza kukesi lokushayela eliphansi elisekelwe emthonjeni, inqobo nje uma amandla kagesi esango angu-4V noma angu-10V emugqeni.
Izici ze-PMOS, ngokuphambene ne-NMOS, zizovuleka inqobo nje uma i-Vgs ingaphansi kwevelu ethile, futhi ifaneleka ukusetshenziswa esimweni sokushayela okuphezulu lapho umthombo uxhumeke ku-VCC. Kodwa-ke, ngenxa yenani elincane lezinhlobo ezishintshayo, ukumelana okuphezulu kanye nentengo ephezulu, nakuba i-PMOS ingasetshenziswa kalula esimweni se-high-end drive, ngakho-ke ku-high-end drive, ngokuvamile isasebenzisa i-NMOS.
Sekukonke,Ama-MOSFETzinokungena okuphezulu kokufakwayo, zenza kube lula ukuhlangana okuqondile kumasekhethi, futhi kulula ukuwenza abe amasekethe amakhulu ahlanganisiwe .
Isikhathi sokuthumela: Jul-20-2024
