Isekethe ephethe i-MOSFET ehlanganisa ukumelana ne-R1-R6, i-electrolytic capacitor C1-C3, i-capacitor C4, i-PNP triode VD1, i-diode D1-D2, i-intermediate relay K1, isiqhathaniso se-voltage, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556, kanye ne-MOSFET Q1, ngephinikhodi engu-6 ye-dual-time base edidiyelwe chip NE556 esebenza njengokufakwa kwesignali, kanye nokuphela kwe-resistor R1 exhunywe ngesikhathi esifanayo ku-Pin 6 ye-dual-time base base integrated chip NE556 isetshenziswa njengokufakwa kwesignali, Ingxenye eyodwa ye-resistor R1 ixhunywe kuphini elingu-14 le-chip edidiyelwe yesikhathi esikabili i-NE556, umkhawulo owodwa we-resistor R2, umkhawulo owodwa we-resistor R4, i-emitter ye-PNP transistor VD1, umsele we-MOSFET Q1, kanye ne-DC. ukunikezwa kwamandla kagesi, kanye nesinye isiphetho se-resistor R1 sixhunywe kuphinikhodi engu-1 yesisekelo sesikhathi esikabili se-chip edidiyelwe i-NE556, iphinikhodi engu-2 ye-chip edidiyelwe yesikhathi esikabili NE556, amandla e-electrolytic aqondile we-capacitor C1, kanye ne-intermediate relay. I-K1 ivamise ukuvala othintana naye u-K1-1, omunye umkhawulo we-intermediate relay K1 uvamise ukuvala othintana naye u-K1-1, isigxobo esinegethivu se-electrolytic capacitor C1 kanye nokuphela kwe-capacitor C3 kuxhunywe endaweni yokuphakelwa kwamandla, enye ingxenye ye-capacitor C3 ixhunywe kuphinikhodi 3 ye-dual time base edidiyelwe chip NE556, iphinikhodi 4 ye-dual time base edidiyelwe chip NE556 ixhunywe esigxotsheni esihle se-electrolytic capacitor C2 kanye nomunye umkhawulo we-resistor R2 ngesikhathi esifanayo, futhi isigxobo esinegethivu se-electrolytic capacitor C2 sixhunywe endaweni yokunikeza amandla, futhi isigxobo esinegethivu se-electrolytic capacitor C2 sixhunywe endaweni yokuphakela amandla. Isigxobo esinegethivu se-C2 sixhunywe endaweni okuphakelwa kuyo amandla, iphinikhodi 5 ye-dual time base edidiyelwe chip NE556 ixhunywe ekugcineni kwe-resistor R3, enye ingxenye ye-resistor R3 ixhunywe ekufakweni kwesigaba esihle sesiqhathanisi samandla kagesi. , okokufaka kwesigaba esingalungile sesiqhathanisi samandla kagesi kuxhunywe esigxotsheni esihle se-diode D1 kanye nesinye isiphetho se-resistor R4 ngesikhathi esifanayo, isigxobo esinegethivu se-diode D1 sixhunywe endaweni yokunikeza amandla, kanye nokuphuma i-voltage comparator ixhunywe ekupheleni kwe-resistor R5, enye i-resistor R5 ixhunywe ku-PNP triplex. Ukukhishwa kwe-voltage comparator kuxhunywe ekugcineni kwe-resistor R5, enye ingxenye ye-resistor R5 ixhunywe esisekelweni se-PNP transistor VD1, umqoqi we-PNP transistor VD1 uxhunywe esigxotsheni esihle se-diode. I-D2, isigxobo esingalungile se-diode D2 sixhunywe ekupheleni kwe-resistor R6, ekupheleni kwe-capacitor C4, nesango le-MOSFET ngasikhathi sinye, omunye umkhawulo we-resistor R6, omunye umkhawulo we i-capacitor C4, kanye nesinye isiphetho se-intermediate relay K1 zonke zixhunywe kumhlaba wokuphakelwa kukagesi kanti enye ingxenye yesidluliseli esimaphakathi i-K1 ixhunywe kumthombo womthomboI-MOSFET.
Umjikelezo wokugcina we-MOSFET, lapho u-A ehlinzeka ngesignali ye-trigger ephansi, ngalesi sikhathi isethi yesikhathi esikabili isisekelo esihlanganisiwe se-chip NE556, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 pin 5 izinga eliphezulu lokukhiphayo, izinga eliphezulu ekufakweni kwesigaba esihle sesiqhathanisi samandla kagesi, okungekuhle. okokufaka kwesigaba sokulinganisa i-voltage nge-resistor R4 kanye ne-diode D1 ukuhlinzeka nge-voltage yereferensi, ngalesi sikhathi, izinga eliphezulu lokuphuma kwe-voltage comparator, izinga eliphezulu ukwenza i-Triode VD1 iqhube, yamanje egeleza isuka kumqoqi we-triode VD1 ishaja i-capacitor C4 nge-diode D2, futhi ngesikhathi esifanayo, i-MOSFET Q1 iqhuba, ngalesi sikhathi, ikhoyili ye-relay ephakathi K1 iyamuncwa, futhi ukudluliselwa okuphakathi kwe-K1 okuvamise ukuvala othintana naye u-K 1-1 kuyanqanyulwa, futhi ngemva kokuxhuma okuphakathi. i-relay K1 ngokuvamile evalekile othintana naye u-K 1-1 uyanqanyulwa, amandla kagesi e-DC aye ku-1 futhi 2 izinyawo ze-dual-time base-integrated chip NE556 inikeza amandla kagesi agcinwa kuze kube yilapho i-voltage ekuphini 1 kanye nophini 2 we-dual- Isisekelo sesikhathi se-chip i-NE556 ishajwa ku-2/3 we-voltage yokuhlinzeka, i-chip ehlanganisiwe yesikhathi esikabili i-NE556 isethwe kabusha ngokuzenzakalelayo, futhi iphinikhodi engu-5 ye-dual-time base-integrated chip NE556 ibuyiselwa ngokuzenzakalelayo ibe sezingeni eliphansi, futhi ama-circuits alandelayo awasebenzi, kuyilapho ngalesi sikhathi, i-capacitor C4 ikhishwa ukuze kugcinwe ukuqhuba kwe-MOSFET Q1 kuze kube sekupheleni kokukhishwa kwe-C4 capacitance kanye nokukhululwa kwekhoyili ye-relay K1, ukudluliselwa okuphakathi kwe-K1 kuvame ukuvala ukuxhumana kwe-K 11, kulokhu. isikhathi ngokusebenzisa i-relay ephakathi nendawo evaliwe i-K1 othintana naye ovamise ukuvala i-K 1-1 izoba isisekelo sesikhathi esimbaxambili esihlanganisiwe se-chip NE556 unyawo olu-1 kanye namafithi angu-2 wokukhishwa kwamandla kagesi, ngokuzayo kuya ku-chip ehlanganisiwe yesikhathi esikabili i-NE556 pin 6 ukuze inikeze okuphansi isignali yokuqalisa ukwenza isisekelo sesikhathi esikabili i-chip NE556 isethwe ukuze ilungiselelwe.
Isakhiwo sesifunda salolu hlelo lokusebenza silula futhi siyinoveli, lapho isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 pin 1 kanye nephinikhodi engu-2 ishaja ku-2/3 we-voltage yokuhlinzeka, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 singasethwa kabusha ngokuzenzakalelayo, isisekelo sesikhathi esikabili esihlanganisiwe se-chip. I-NE556 pin 5 ibuyela ngokuzenzakalelayo ezingeni eliphansi, ukuze amasekethe alandelayo angasebenzi, ukuze amise ngokuzenzakalelayo ukushaja i-capacitor C4, futhi ngemva kokumisa ukushajwa kwe-capacitor C4 egcinwe yi-MOSFET Q1 conductive, lolu hlelo lokusebenza lungagcina ngokuqhubekayo.I-MOSFETI-Q1 conductive imizuzwana emi-3.
Kuhlanganisa resistors R1-R6, electrolytic capacitor C1-C3, capacitor C4, PNP transistor VD1, diode D1-D2, intermediate relay K1, voltage comparator, isisekelo esikabili base chip edidiyelwe NE556 kanye MOSFET Q1, pin 6 yesisekelo sesikhathi esikabili edidiyelwe. I-chip NE556 isetshenziswa njengokufakwa kwesignali, futhi umkhawulo owodwa we-resistor R1 uxhunywe kuphinikhodi engu-14 ye-dual base base integrated chip NE556, resistor R2, iphinikhodi engu-14 ye-dual time base edidiyelwe chip NE556 kanye nephinikhodi engu-14 yesikhathi esikabili. i-base ehlanganisiwe ye-chip NE556, kanye ne-resistor R2 ixhunywe kuphinikhodi engu-14 yesisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556. iphinikhodi engu-14 ye-dual-time base integrated chip NE556, umkhawulo owodwa we-resistor R2, umkhawulo owodwa we-resistor R4, i-PNP transistor
Hlobo luni lomgomo wokusebenza?
Lapho u-A enikeza isignali ye-trigger ephansi, bese kuba isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556, isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 pin 5 izinga eliphezulu lokukhiphayo, izinga eliphezulu ekufakweni kwesigaba esihle sesiqhathanisi samandla kagesi, okokufaka kwesigaba esingesihle I-voltage comparator yi-resistor R4 kanye ne-diode D1 ukunikeza i-voltage yereferensi, kulokhu, izinga eliphezulu lokuphuma kwe-voltage comparator, izinga eliphezulu le-transistor VD1 conduction, ukugeleza kwamanje kusuka kumqoqi we-transistor VD1 nge-diode D2 kuya i-capacitor C4 iyashaja, ngalesi sikhathi, ukumuncwa kwekhoyili ye-relay K1, ukumunca ikhoyili edluliselwe phakathi kwe-K1. Ukugeleza kwamanje kusuka kumqoqi we-transistor VD1 kukhokhiswa ku-capacitor C4 nge-diode D2, futhi ngesikhathi esifanayo,I-MOSFETI-Q1 iqhuba, ngalesi sikhathi, ikhoyili ye-intermediate relay K1 iyamuncwa, futhi i-intermediate relay K1 othintana naye ovalekile ngokuvamile u-K 1-1 uyanqanyulwa, futhi ngemva kokudluliselwa okuphakathi kwe-K1 othintana naye ovalekile u-K 1-1 uyanqanyulwa, amandla amandla kagesi ahlinzekwe ngumthombo wamandla we-DC kumitha engu-1 no-2 ye-dual timebase edidiyelwe chip i-NE556 igcinwa kuze kube yilapho i-voltage iku-pin 1 kanye ne-pin 2 ye-dual-time base-integrated chip NE556 ishajwa ibe ngu-2/3 we i-voltage yokuhlinzeka, i-chip edidiyelwe yesikhathi esikabili i-NE556 isethwa kabusha ngokuzenzakalelayo, futhi iphinikhodi engu-5 ye-dual-time base integrated chip NE556 ibuyiselwa ngokuzenzakalelayo ibe sezingeni eliphansi, futhi amasekethe alandelayo awasebenzi, futhi ngalesi sikhathi, i-capacitor C4 ikhishwa ukuze kugcinwe i-MOSFET Q1 conduction kuze kube sekupheleni kokukhishwa kwe-capacitor C4, futhi kukhishwa ikhoyili ye-intermediate relay K1, kanye ne-intermediate relay K1 othintana naye ovalekile u-K 1-1 uyanqanyulwa. I-Relay K1 ngokuvamile ivaliwe othintana naye u-K 1-1 uvaliwe, kulokhu ngokusebenzisa i-relay ephakathi evaliwe i-K1 othintana naye ngokuvamile ovaliwe u-K 1-1 uzoba isisekelo sesikhathi esikabili esihlanganisiwe se-chip NE556 1 izinyawo namamitha angu-2 ekukhululweni kwamandla kagesi, ngokuzayo i-chip edidiyelwe yesikhathi esikabili i-NE556 pin 6 ukuze inikeze isignali yokuqalisa ukuze ihlale phansi, ukuze kwenziwe amalungiselelo esethi ehlanganisiwe yesisekelo sesikhathi esikabili ye-chip NE556.
Isikhathi sokuthumela: Apr-19-2024
