Ukuqashelwa kwe-Insulated Layer Gate MOSFETs

Uhlobo lwesango lokuvikela ukuvikela uhlobo lwe-MOSFETI-MOSFET (ngemuva kwalokhu okuzobizwa ngokuthi i-MOSFET), eneshevu yekhebula le-silicon dioxide phakathi nogesi wesango kanye nokukhipha umthombo.

I-MOSFET nayoIsiteshi se-N kanye ne-P-channel izigaba ezimbili, kodwa isigaba ngasinye sihlukaniswe ngohlobo lwesibili lwesithuthukisi kanye nokuncipha kokukhanya, ngakho kunengqikithi yezinhlobo ezine:Ukuthuthukiswa kwesiteshi se-N, ukuthuthukiswa kwesiteshi se-P, ukuncipha kokukhanya kwesiteshi se-N, uhlobo lokuncipha kokukhanya kwesiteshi se-P. Kodwa lapho voltage yomthombo wesango inguziro, i-drain current futhi zero of the pipe are ngcono tube. Kodwa-ke, lapho i-voltage yomthombo wesango inguziro, i-drain current ingeyena uziro ihlukaniswa njengamashubhu ohlobo olusebenzisa ukukhanya.
Umgomo othuthukisiwe we-MOSFET:

Lapho usebenza phakathi komthombo wesango ungasebenzisi i-voltage, indawo ephakathi nendawo yomthombo we-PN yokudonsa ibheke kolunye uhlangothi, ngakho-ke ngeke kube khona isiteshi sokuhambisa, noma ngabe indawo ephakathi nendawo yomthombo ene-voltage, ugesi we-conductive trench uvaliwe, akunakwenzeka ukuba ube nokusebenza kwamanje ngokusho. Lapho umthombo ophakathi nomthombo wesango kanye ne-voltage yesiqondiso esihle enanini elithile, phakathi nendawo yokukhipha amanzi kuzokhiqiza isiteshi sokuphepha esiqhubayo, ukuze umsele osanda kukhiqizwa yilo mthombo wegesi wesango ubizwe ngokuthi i-voltage evulekile VGS, kukhudlwana phakathi kwe-voltage yomthombo wesango, umsele we-conductive ubanzi, okwenza kube nokugeleza okukhulu kukagesi.

Isimiso se-Slight Dissipative MOSFET:

Lapho isebenza, ayikho i-voltage esetshenziswa phakathi nomthombo wesango, ngokungafani nohlobo lokuthuthukisa i-MOSFET, futhi isiteshi sokuhambisa sikhona phakathi nomthombo wokukhipha amanzi, ngakho-ke i-voltage eqondile kuphela yengezwa phakathi nomthombo wokukhipha amanzi, okuyinto kubangela ukugeleza kwamanje kokukhipha amanzi. Ngaphezu kwalokho, umthombo wesango ophakathi nendawo oqondile we-voltage, ukunwetshwa kwesiteshi esiqhutshwayo, engeza indawo ehlukile ye-voltage, i-conductive channel iyancipha, ngokuhamba kukagesi kuzoba kuncane, ngokuthuthukiswa kokuqhathanisa kwe-MOSFET, kungase futhi kube enombolweni ephozithivu nenegethivu yenombolo ethile yezifunda ngaphakathi komzila wokuqhuba.

Ukusebenza kwe-MOSFET:

Okokuqala, ama-MOSFET asetshenziselwa ukukhulisa. Ngoba ukumelana okokufaka kwe-MOSFET amplifier kuphezulu kakhulu, ngakho-ke i-capacitor yokuhlunga ingaba yincane, ngaphandle kwesidingo sokusebenzisa ama-electrolytic capacitors.

Okwesibili, ukumelana nokufaka okuphezulu kakhulu kwe-MOSFET kulungele ikakhulukazi ukuguqulwa kwesici se-impedance. Ivame ukusetshenziswa esigabeni sokufakwayo se-amplifier esinamaleveli amaningi sokuguqulwa kwesici se-impedance.

I-MOSFET ingasetshenziswa njenge-resistor elungisekayo.

Okwesine, i-MOSFET ingaba lula njengomthombo wamandla we-DC.

V. I-MOSFET ingasetshenziswa njengento eshintshayo.