Njengenye yemishini eyisisekelo emkhakheni we-semiconductor, i-MOSFET isetshenziswa kabanzi kukho kokubili ukwakheka kwe-IC kanye nezinhlelo zokusebenza zesekethe yezinga lebhodi. Ngakho-ke kungakanani okwaziyo ngamapharamitha ahlukahlukene we-MOSFET? Njengochwepheshe kuma-MOSFET kagesi aphakathi nendawo naphansi,Olukeyizokuchazela ngokuningiliziwe amapharamitha ahlukahlukene we-MOSFET!
I-VDSS ephezulu yomthombo wokukhipha amanzi imelana ne-voltage
I-voltage yomthombo wokukhipha amanzi lapho i-drain yamanje ifinyelela inani elithile (ikhuphuka kakhulu) ngaphansi kwezinga lokushisa elithile kanye nesekethe emfushane yomthombo wesango. I-drain-source voltage kuleli cala ibizwa nangokuthi i-avalanche breakdown voltage. I-VDSS ine-coefficient yokushisa ephozithivu. Ku-50°C, i-VDSS icishe ibe ngu-90% walokho ku-25°C. Ngenxa yemvume evame ukushiywa ekukhiqizeni okuvamile, i-avalanche breakdown voltage yeI-MOSFETihlale ingaphezu kwamandla kagesi alinganiselwe.
Isikhumbuzi esifudumele sika-Olukey: Ukuze kuqinisekiswe ukwethembeka komkhiqizo, ngaphansi kwezimo ezimbi kakhulu zokusebenza, kunconywa ukuthi i-voltage yokusebenza akufanele idlule u-80~90% yenani elilinganiselwe.
I-VGSS ephezulu yesango-umthombo imelana ne-voltage
Ibhekisela enanini le-VGS lapho i-current reverse phakathi kwesango nomthombo iqala ukwanda kakhulu. Ukweqa leli nani lamandla kagesi kuzodala ukuwohloka kwe-dielectric kwesendlalelo se-oxide yesango, okuwukuwohloka okulimazayo nokungenakuhlehliswa.
I-ID ephezulu yomthombo wamanje wamanje
Kubhekiselwa kumkhawulo wamanje ovunyelwe ukudlula phakathi komsele kanye nomthombo lapho i-transistor yomphumela wenkundla isebenza ngokujwayelekile. Ukusebenza kwamanje kwe-MOSFET akufanele kweqe i-ID. Le pharamitha izokwehla njengoba izinga lokushisa lendawo ehlanganayo likhuphuka.
I-IDM esiphezulu se-pulse drain-source current
Ibonisa izinga lokushaya kwenhliziyo idivayisi engakwazi ukuyiphatha. Le parameter izokwehla njengoba izinga lokushisa lokuhlangana likhuphuka. Uma le pharamitha incane kakhulu, isistimu ingaba sengcupheni yokwehliswa amandla amanje ngesikhathi sokuhlolwa kwe-OCP.
I-PD esiphezulu sokuchithwa kwamandla
Kubhekiselwa ekuhlakazweni okukhulu komthombo wokukhipha amandla avunyelwe ngaphandle kokuphazamisa ukusebenza kwe-transistor yomphumela wenkundla. Uma isetshenziswa, ukusetshenziswa kwamandla kwangempela kwe-transistor yomphumela wenkundla kufanele kube ngaphansi kwalokho kwe-PDSM futhi kushiye imajini ethile. Le parameter ngokuvamile iyehla njengoba izinga lokushisa lendawo ehlanganayo likhuphuka.
I-TJ, i-TSTG izinga lokushisa lokusebenza kanye nebanga lokushisa kwendawo yokugcina
Lawa mapharamitha amabili alinganisa ububanzi bezinga lokushisa elivunyelwa indawo yokusebenza nesitoreji sedivayisi. Leli banga lokushisa lisethwe ukuze lihlangabezane nezidingo eziyisisekelo zempilo yokusebenza kwedivayisi. Uma idivayisi iqinisekiswa ukuthi isebenza ngaphakathi kwalolu banga lokushisa, impilo yayo yokusebenza izonwetshwa kakhulu.
Isikhathi sokuthumela: Dec-15-2023
