I-Field Effect Transistor efushanisiwe njengeI-MOSFET.Kunezinhlobo ezimbili eziyinhloko: amashubhu omphumela wenkundla ye-junction kanye namashubhu omphumela wensimu ye-metal-oxide semiconductor. I-MOSFET yaziwa nangokuthi i-unipolar transistor eneningi labathwali ababandakanyeka ekuqhubeni. Amadivayisi we-semiconductor alawulwa nge-voltage. Ngenxa yokumelana nokufakwayo okuphezulu, umsindo ophansi, ukusetshenziswa kwamandla okuphansi, nezinye izici, okuyenza ibe imbangi eqinile kuma-bipolar transistors namandla transistors.
I. Imingcele eyinhloko ye-MOSFET
1, DC nemingcele
I-Saturation drain current ingachazwa ngokuthi i-drain current ehambisana nalapho i-voltage phakathi kwesango nomthombo ilingana noziro futhi i-voltage ephakathi kokukhipha amanzi nomthombo inkulu kunevoltheji yokuncinza.
I-Pinch-off voltage UP: I-UGS edingekayo ukunciphisa i-ID ibe yamanje encane uma i-UDS iqinisekile;
I-voltage yokuvula i-UT: I-UGS iyadingeka ukuletha i-ID enanini elithile uma i-UDS iqinisekile.
2, Amapharamitha we-AC
I-low-frequency transconductance gm : Ichaza umthelela wokulawula wesango kanye ne-voltage yomthombo ku-drain current.
I-Inter-pole capacitance: amandla phakathi kwama-electrode amathathu e-MOSFET, inani elincane, ukusebenza kangcono.
3, Nciphisa amapharamitha
Khipha, i-voltage yokuwohloka komthombo: lapho i-drain current ikhuphuka kakhulu, izokhiqiza ukuphuka kwe-avalanche lapho i-UDS.
I-voltage yokuhlukaniswa kwesango: i-junction field effect tube ukusebenza okuvamile, isango kanye nomthombo phakathi kwe-PN junction esimweni sokuchelela okuhlanekezelwe, yamanje inkulu kakhulu ukuthi ingakhiqiza ukwaphuka.
II. Izici zeAma-MOSFET
I-MOSFET inomsebenzi wokukhulisa futhi ingakha isekethe ekhulisiwe. Uma iqhathaniswa ne-triode, inezici ezilandelayo.
(1) I-MOSFET iyithuluzi elilawulwa yi-voltage, futhi amandla alawulwa yi-UGS;
(2) Okwamanje ekufakweni kwe-MOSFET kuncane kakhulu, ngakho ukumelana nokokufaka kuphezulu kakhulu;
(3) Ukuzinza kwayo kwezinga lokushisa kuhle ngoba isebenzisa izithwali eziningi ze-conductivity;
(4) I-voltage amplification coefficient yesekethe yayo yokukhulisa i-voltage incane kunaleyo ye-triode;
(5) Iyakwazi ukumelana nemisebe.
Okwesithathu,I-MOSFET kanye nokuqhathanisa kwe-transistor
(1) Umthombo we-MOSFET, isango, umthombo wokukhipha amanzi kanye nomthombo we-triode, isisekelo, isigxobo sephoyinti esimisiwe sihambisana nendima efanayo.
(2) I-MOSFET iyisisetshenziswa samanje esilawulwa yi-voltage, i-amplification coefficient incane, ikhono lokukhulisa liphansi; i-triode iyidivayisi ye-voltage elawulwa manje, ikhono lokukhulisa amandla liqinile.
(3) Isango le-MOSFET ngokuyisisekelo alithathi elamanje; nomsebenzi we-triode, isisekelo sizomunca wamanje othile. Ngakho-ke, ukumelana nokufaka kwesango le-MOSFET kuphezulu kunokumelana nokokufaka kwe-triode.
(4) Inqubo yokuqhuba ye-MOSFET ibamba iqhaza le-polytron, kanti i-triode ibamba iqhaza lezinhlobo ezimbili zabathwali, i-polytron ne-oligotron, futhi ukugxila kwayo kwe-oligotron kuthinteka kakhulu izinga lokushisa, imisebe nezinye izici, ngakho-ke, i-MOSFET inokusimama okungcono kwezinga lokushisa nokumelana nemisebe kune-transistor. I-MOSFET kufanele ikhethwe lapho izimo zemvelo zishintsha kakhulu.
(5) Uma i-MOSFET ixhunywe kumthombo wensimbi kanye ne-substrate, umthombo nokudonsa kungashintshwa futhi izici azishintshi kakhulu, kuyilapho uma umqoqi kanye ne-emitter ye-transistor kushintshaniswa, izici zihlukile kanye nenani lika-β. kuncishisiwe.
(6) Isibalo somsindo we-MOSFET sincane.
(7) I-MOSFET ne-triode zingakhiwa amasekhethi e-amplifier ahlukahlukene kanye namasekethe ashintshayo, kodwa eyokuqala isebenzisa amandla amancane, ukuzinza okuphezulu kwe-thermal, ububanzi obubanzi bamandla kagesi, ngakho-ke isetshenziswa kabanzi emikhakheni emikhulu kanye ne-Ultra-large- sikala izifunda ezididiyelwe.
(8) I-on-resistance ye-triode inkulu, futhi ukumelana kwe-MOSFET kuncane, ngakho-ke ama-MOSFET ngokuvamile asetshenziswa njengamaswishi asebenza kahle kakhulu.
Isikhathi sokuthumela: May-16-2024
