Ama-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) ngokuvamile abhekwa njengamadivayisi alawulwa ngokugcwele. Lokhu kungenxa yokuthi isimo sokusebenza (sivuliwe noma sivaliwe) se-MOSFET silawulwa ngokuphelele yi-voltage yesango (Vgs) futhi asincikile kusisekelo samanje njengasendabeni ye-bipolar transistor (BJT).
Ku-MOSFET, i-voltage yesango i-Vgs inquma ukuthi ngabe isiteshi esiqhubayo sakhiwe phakathi komthombo kanye ne-drain, kanye nobubanzi kanye nokuhamba kwesiteshi sokuqhuba. Uma i-Vgs idlula i-threshold voltage Vt, ishaneli yokuqhuba iyakhiwa bese i-MOSFET ingena kuhulumeni; uma i-Vgs iwela ngaphansi kwe-Vt, isiteshi esiqhubayo siyanyamalala futhi i-MOSFET isesimweni sokunqanyulwa. Lokhu kulawulwa kulawulwa ngokugcwele ngoba i-voltage yesango ingalawula ngokuzimela nangokunembile isimo sokusebenza se-MOSFET ngaphandle kokuthembela kwamanye amapharamitha amanje noma ama-voltage.
Ngokuphambene, isimo sokusebenza semishini elawulwa uhhafu (isb., i-thyristors) ayithinteki kuphela i-voltage yokulawula noma yamanje, kodwa nangezinye izici (isb, i-anode voltage, yamanje, njll.). Ngenxa yalokho, amadivayisi alawulwa ngokugcwele (isb, ama-MOSFET) ngokuvamile anikeza ukusebenza okungcono ngokunemba kokulawula nokuguquguquka.
Kafushane, ama-MOSFET angamadivayisi alawulwa ngokugcwele isimo sawo sokusebenza esilawulwa ngokuphelele yi-voltage yesango, futhi anezinzuzo zokunemba okuphezulu, ukuguquguquka okuphezulu nokusetshenziswa kwamandla aphansi.
Isikhathi sokuthumela: Sep-20-2024
