Namuhla kumandla aphezulu asetshenziswa kakhuluI-MOSFETukwethula kafushane umgomo wayo wokusebenza. Bona ukuthi iwubona kanjani umsebenzi wayo.
I-Metal-Oxide-Semiconductor okungukuthi, i-Metal-Oxide-Semiconductor, leli gama lichaza ukwakheka kwe-MOSFET kusekethe edidiyelwe, okungukuthi: esakhiweni esithile sedivayisi ye-semiconductor, ehlanganiswe ne-silicon dioxide nensimbi, ukwakheka. wesango.
Umthombo nokukhipha amanzi kwe-MOSFET kuyaphikiswa, womabili amazoni ohlobo lwe-N akhiwe ku-backgate yohlobo lwe-P. Ezimweni eziningi, lezi zindawo ezimbili ziyefana, ngisho noma iziphetho ezimbili zokulungiswa ngeke zithinte ukusebenza kwedivayisi, idivayisi enjalo ibhekwa njenge-symmetrical.
Ukwahlukaniswa: ngokohlobo lwempahla yesiteshi kanye nohlobo lwesango elivalekile lesiteshi ngasinye esingu-N kanye nesiteshi se-P sesibili; ngokuya ngemodi yokuqhuba: I-MOSFET ihlukaniswe yaba yincithakalo kanye nokuthuthukiswa, ngakho-ke i-MOSFET ihlukaniswe ngokunciphisa nokuthuthukiswa kwesiteshi se-N; Ukuncipha kwesiteshi se-P kanye nokuthuthukiswa kwezigaba ezine ezinkulu.
Isimiso sokusebenza se-MOSFET - izici zesakhiwo seI-MOSFETiqhuba kuphela abathwali be-polarity (ama-polys) abathintekayo ku-conductive, i-transistor ye-unipolar. Indlela yokuqhuba iyafana ne-MOSFET enamandla aphansi, kodwa isakhiwo sinomehluko omkhulu, i-MOSFET enamandla aphansi iyisisetshenziswa sokuhambisa esivundlile, iningi lamandla e-MOSFET vertical conductive structure, eyaziwa nangokuthi i-VMOSFET, eyithuthukisa kakhulu i-MOSFET. I-voltage yedivayisi namandla okumelana namanje. Isici esiyinhloko ukuthi kukhona ungqimba lwe-silica insulation phakathi kwesango lensimbi kanye nesiteshi, ngakho-ke linokumelana okuphezulu kokufaka, ithubhu iqhuba ngokugxila okubili okuphezulu kwe-n diffusion zone ukuze yakhe i-n-type conductive channel. Ama-MOSFET okuthuthukisa i-n-channel kufanele asetshenziswe esangweni ngokuchema okuya phambili, futhi kuphela uma i-voltage yomthombo wesango inkulu kune-threshold voltage ye-conductive channel ekhiqizwa i-n-channel MOSFET. Ama-MOSFET ohlobo lwe-n-channel angama-MOSFET angu-n-channel lapho iziteshi eziqhubayo zenziwa khona lapho kungekho voltage yesango esetshenziswayo (i-voltage yomthombo wesango inguziro).
Umgomo wokusebenza kwe-MOSFET ukulawula inani "lemali ekhokhwayo" ngokusebenzisa i-VGS ukuguqula isimo sesiteshi sokuhambisa esakhiwe "inkokhelo ekhokhwayo", bese ufinyelela inhloso yokulawula i-drain current. Ekwenziweni kwamashubhu, ngenqubo yokuvikela ungqimba ekuveleni kwenani elikhulu lama-ion amahle, ngakho-ke ngakolunye uhlangothi lwesixhumi esibonakalayo kungenziwa ukukhokhiswa okubi kakhulu, lezi zinkokhelo ezimbi ekungeneni okuphezulu kokungcola ku-N. isifunda esixhunywe ekwakhiweni kwesiteshi sokuqhuba, ngisho naku-VGS = 0 kukhona ne-ID yamanje yokuvuza enkulu. lapho i-voltage yesango ishintshwa, inani lenkokhiso elenziwa esiteshini nalo liyashintshwa, kanye nobubanzi besiteshi esiqhutshwayo kanye nobuncane besiteshi noshintsho, kanjalo ne-ID yamanje yokuvuza ne-voltage yesango. I-ID yamanje iyahlukahluka nge-voltage yesango.
Manje isicelo ofI-MOSFETithuthukise kakhulu ukufunda kwabantu, ukusebenza kahle, ngenkathi ithuthukisa izinga lethu lempilo. Sinokuqonda okuhluzekile ngakho ngokuqonda okuthile okulula. Ngeke nje isetshenziswe njengethuluzi, ukuqonda okwengeziwe ngezici zayo, isimiso somsebenzi, esizosinika injabulo enkulu.
Isikhathi sokuthumela: Apr-18-2024
