"MOSFET" isifinyezo se-Metal Oxide Semicoductor Field Effect Transistor. Kuyidivayisi eyenziwe ngezinto ezintathu: insimbi, i-oxide (SiO2 noma i-SiN) kanye ne-semiconductor. I-MOSFET ingelinye lamadivayisi ayisisekelo emkhakheni we-semiconductor. Noma ngabe iku-IC design noma izinhlelo zokusebenza zesekethe yezinga lebhodi, inkulu kakhulu. Imingcele eyinhloko ye-MOSFET ihlanganisa i-ID, i-IDM, VGSS, V(BR)DSS, RDS(on), VGS(th), njll. Uyazazi lezi? I-OLUKEY Inkampani, njenge-winsok yaseTaiwanese ephakathi nendawo ukuya phezulu kanye ne-low-voltageI-MOSFETumhlinzeki wesevisi ye-ejenti, unethimba eliwumgogodla elinesipiliyoni seminyaka ecishe ibe ngu-20 ukukuchazela ngokuningiliziwe imingcele ehlukahlukene ye-MOSFET!
Incazelo yencazelo yemingcele ye-MOSFET
1. Amapharamitha amakhulu kakhulu:
I-ID: Ubuningi bamanje bomthombo wokukhipha amanzi. Kubhekiselwa kumkhawulo wamanje ovunyelwe ukudlula phakathi komsele kanye nomthombo lapho i-transistor yomphumela wenkundla isebenza ngokujwayelekile. Ukusebenza kwamanje kwe-transistor yomphumela wenkundla akufanele yeqe i-ID. Le pharamitha iyehla njengoba izinga lokushisa lendawo ehlanganayo likhuphuka.
I-IDM: Umthamo omkhulu wamanje wokudonsa amanzi. Le pharamitha izokwehla njengoba izinga lokushisa lendawo likhuphuka, libonise ukumelana nomthelela futhi lihlobene nesikhathi sokushaya kwenhliziyo. Uma le pharamitha incane kakhulu, isistimu ingaba sengcupheni yokwehliswa amandla amanje ngesikhathi sokuhlolwa kwe-OCP.
PD: Amandla amakhulu ahlakaziwe. Kubhekiselwa ekuhlakazweni okukhulu komthombo wokukhipha amandla avunyelwe ngaphandle kokuphazamisa ukusebenza kwe-transistor yomphumela wenkundla. Uma isetshenziswa, ukusetshenziswa kwamandla kwangempela kwe-FET kufanele kube ngaphansi kwalokho kwe-PDSM futhi kushiye umkhawulo othile. Le pharamitha ngokuvamile iyehla njengoba izinga lokushisa lokuhlangana likhuphuka
I-VDSS: Umthamo omkhulu wokumelana nomthombo wokukhipha amanzi. I-voltage yomthombo wokukhipha amanzi lapho i-drain yamanje ifinyelela inani elithile (ikhuphuka kakhulu) ngaphansi kwezinga lokushisa elithile kanye nesekethe emfushane yomthombo wesango. I-drain-source voltage kuleli cala ibizwa nangokuthi i-avalanche breakdown voltage. I-VDSS ine-coefficient yokushisa ephozithivu. Ku-50°C, i-VDSS icishe ibe ngu-90% walokho ku-25°C. Ngenxa yemvume evamise ukushiywa ekukhiqizweni okuvamile, i-avalanche voltage breakdown ye-MOSFET ihlale ingaphezu kwamandla kagesi alinganiselwe.
OLUKEYAmacebiso Afudumele: Ukuqinisekisa ukwethembeka komkhiqizo, ngaphansi kwezimo ezimbi kakhulu zokusebenza, kunconywa ukuthi i-voltage yokusebenza akufanele idlule u-80~90% yenani elilinganiselwe.
I-VGSS: Ubukhulu besango-umthombo wokumelana ne-voltage. Ibhekisela enanini le-VGS lapho i-current reverse phakathi kwesango nomthombo iqala ukwanda kakhulu. Ukweqa leli nani lamandla kagesi kuzodala ukuwohloka kwe-dielectric kwesendlalelo se-oxide yesango, okuwukuwohloka okulimazayo nokungenakuhlehliswa.
TJ: Izinga lokushisa eliphezulu le-junction yokusebenza. Ivamise ukuba ngu-150 ℃ noma i-175 ℃. Ngaphansi kwezimo zokusebenza zokuklama idivayisi, kuyadingeka ukugwema ukudlula lokhu kushisa futhi ushiye umkhawulo othile.
I-TSTG: izinga lokushisa lokulondoloza
Lawa mapharamitha amabili, i-TJ ne-TSTG, ilinganisa ibanga lezinga lokushisa lokuhlangana elivunyelwe indawo yokusebenza nesitoreji yedivayisi. Leli banga lokushisa lisethwe ukuze lihlangabezane nezidingo eziyisisekelo zempilo yokusebenza kwedivayisi. Uma idivayisi iqinisekiswa ukuthi isebenza ngaphakathi kwalolu banga lokushisa, impilo yayo yokusebenza izonwetshwa kakhulu.
2. Imingcele emile
Izimo zokuhlola ze-MOSFET ngokuvamile ziyi-2.5V, 4.5V, kanye ne-10V.
I-V(BR)DSS: I-voltage ehlukanisa umthombo wokukhipha amanzi. Kubhekiselwa ku-voltage ephezulu yomthombo wokukhipha amanzi i-transistor yomphumela wenkundla engamelana nayo uma i-voltage yesango yomthombo we-VGS ingu-0. Lona umkhawulo obekiwe, futhi i-voltage yokusebenza esetshenziswa ku-transistor yomphumela wenkundla kufanele ibe ngaphansi kuka-V(BR) I-DSS. Inezici zokushisa ezinhle. Ngakho-ke, inani lale parameter ngaphansi kwezimo eziphansi zokushisa kufanele kuthathwe njengokucatshangelwa kokuphepha.
△V(BR)DSS/△Tj: I-temperature coefficient of drain-source breakdown voltage, ngokuvamile ngu-0.1V/℃
I-RDS(ivuliwe): Ngaphansi kwezimo ezithile ze-VGS (imvamisa engu-10V), izinga lokushisa lokuhlangana kanye ne-drain current, ukumelana okuphezulu phakathi kokukhipha amanzi nomthombo lapho i-MOSFET ivuliwe. Ipharamitha ebaluleke kakhulu enquma amandla asetshenziswayo lapho i-MOSFET ivuliwe. Le pharamitha ngokuvamile iyanda njengoba izinga lokushisa lendawo ehlanganayo likhuphuka. Ngakho-ke, inani lale pharamitha endaweni yokushisa ephezulu kakhulu yokusebenza kufanele isetshenziselwe ukubala ukulahleka nokwehla kwamandla kagesi.
I-VGS(th): i-voltage yokuvula (i-threshold voltage). Lapho i-voltage yokulawula isango langaphandle i-VGS idlula i-VGS(th), izendlalelo ezingaphezulu zokuguqulwa komsele kanye nezifunda zomthombo zakha isiteshi esixhunyiwe. Ezinhlelweni zokusebenza, i-voltage yesango lapho i-ID ilingana no-1 mA ngaphansi kwesimo se-drain short-circuit ngokuvamile ibizwa ngokuthi i-voltage yokuvula. Le pharamitha ngokuvamile iyehla njengoba izinga lokushisa lendawo ehlanganayo likhuphuka
I-IDSS: i-drain-source current, i-drain-source current uma i-voltage yesango i-VGS=0 ne-VDS iyinani elithile. Ngokuvamile ezingeni le-microamp
I-IGSS: idrayivu yomthombo wesango yamanje noma yamanje ehlehlayo. Njengoba okokufaka kwe-MOSFET kukhulu kakhulu, i-IGSS ivamise ukuba sezingeni le-nanoamp.
3. Amapharamitha anamandla
gfs: transconductance. Kubhekiselwa esilinganisweni soshintsho ekukhishweni kwamanje kokuphumayo kuya ekushintsheni kwamandla kagesi wesango lomthombo. Kuyisilinganiso sekhono le-voltage yomthombo wesango ukulawula amandla okukhipha amanzi. Sicela ubheke ishadi lobudlelwano bokudlulisa phakathi kwama-gf ne-VGS.
Qg: Isamba sokushaja kwesango. I-MOSFET iyithuluzi lokushayela lohlobo lwe-voltage. Inqubo yokushayela iyinqubo yokusungulwa kwe-voltage yesango. Lokhu kufinyelelwa ngokushaja amandla phakathi komthombo wesango nokukhipha isango. Lesi sici sizoxoxwa ngokuningiliziwe ngezansi.
Qgs: Umthamo wokushaja umthombo wesango
I-Qgd: i-gate-to-drain charge (kucatshangelwa umphumela we-Miller). I-MOSFET iyithuluzi lokushayela lohlobo lwe-voltage. Inqubo yokushayela iyinqubo yokusungulwa kwe-voltage yesango. Lokhu kufinyelelwa ngokushaja amandla phakathi komthombo wesango nokukhipha isango.
Td(ku): isikhathi sokubambezeleka kokwenziwa. Isikhathi esisuka lapho i-voltage yokufaka ikhuphuka iye ku-10% kuze kube yilapho i-VDS yehla iye ku-90% we-amplitude yayo
Tr: isikhathi sokukhuphuka, isikhathi sokuthi i-voltage ephumayo i-VDS yehle isuka ku-90% iye ku-10% yobukhulu bayo
I-Td(off): Isikhathi sokulibaziseka sokuvala, isikhathi kusukela lapho i-voltage efakiwe yehla ifika ku-90% ukuya lapho i-VDS ikhuphuka ifike ku-10% wevoltage yayo yokuvala
Tf: Isikhathi sokuwa, isikhathi sokuthi i-voltage ephumayo i-VDS ikhuphuke isuka ku-10% iye ku-90% yobukhulu bayo
I-Ciss: Umthamo wokufaka, yenza i-drain-circuit kanye nomthombo, futhi ulinganise amandla phakathi kwesango nomthombo ngesignali ye-AC. Ciss= CGD + CGS (CDS short circuit). Inomthelela oqondile ekubambezelekeni kokukhanyisa nokuvala kwedivayisi.
I-Coss: Amandla okukhiphayo, i-short-circuit isango nomthombo, futhi ulinganise amandla phakathi kwe-drain kanye nomthombo ngesignali ye-AC. I-Coss = CDS +CGD
I-Crss: Amandla okudlulisela emuva emuva. Ngomthombo oxhunywe emhlabathini, amandla alinganisiwe phakathi komsele nesango Crss=CGD. Enye yezimiso ezibalulekile zokushintsha isikhathi sokukhuphuka nokuwa. Crss=CGD
I-interelectrode capacitance kanye nekhono elenziwa yi-MOSFET le-MOSFET kuhlukaniswe amandla okufaka, amandla okukhipha kanye nekhono lempendulo ngabakhiqizi abaningi. Amanani acashuniwe ngawe-voltage egxilile yokukhipha emthonjeni. Lawa mandla ashintsha njengoba i-drain-source voltage ishintsha, futhi inani le-capacitance linomphumela olinganiselwe. Inani lomthamo wokufakwayo linikeza kuphela inkomba elinganiselwe yokushaja edingwa umjikelezo womshayeli, kuyilapho ulwazi lokushajwa kwesango luwusizo kakhulu. Ibonisa inani lamandla isango okufanele liwakhokhise ukuze lifinyelele i-voltage ethize yesango ukuya emthonjeni.
4. Imingcele yesici sokuqhekeka kwe-Avalanche
Ipharamitha yesici sokuqhekeka kwe-avalanche iyinkomba yekhono le-MOSFET lokumelana nokugcwala ngokweqile endaweni engasebenzi. Uma i-voltage idlula i-voltage yomkhawulo womthombo wokukhipha amanzi, idivayisi izoba sesimweni se-avalanche.
I-EAS: Amandla okuqhekeka kwe-avalanche ye-pulse eyodwa. Lena ipharamitha yomkhawulo, ekhombisa amandla aphezulu okuqhekeka kwe-avalanche i-MOSFET engamelana nawo.
I-IAR: i-avalanche current
INDLEBE: Amandla Okuphindwa Kwe-Avalanche Breakdown
5. Imingcele ye-vivo diode
IS: I-continuous maximum freewheeling current (kusuka emthonjeni)
I-ISM: i-pulse maximum freewheeling current (kusuka emthonjeni)
I-VSD: i-voltage eya phambili
Trr: hlehlisa isikhathi sokutakula
Qrr: Buyisela emuva ukutholwa kokushaja
I-Ton: Isikhathi sokuqhuba phambili. (Ayinakwa)
Isikhathi sokuvula se-MOSFET nencazelo yesikhathi sokuvala
Phakathi nenqubo yokufaka isicelo, izici ezilandelayo ngokuvamile zidinga ukucatshangelwa:
1. Izici ze-coefficient yezinga lokushisa elihle le-V (BR) DSS. Lesi sici, esihlukile kumadivayisi e-bipolar, siwenza athembeke kakhulu njengoba amazinga okushisa okusebenza avamile enyuka. Kodwa futhi udinga ukunaka ukuthembeka kwayo ngesikhathi sokuqala kwamakhaza aphansi.
2. Izici ze-coefficient zokushisa ezingezinhle ze-V(GS)th. Amandla omkhawulo wesango azokwehla ngokwezinga elithile njengoba izinga lokushisa lokuhlangana likhuphuka. Eminye imisebe izophinde yehlise leli khono lomkhawulo, mhlawumbe nangaphansi kwamandla angu-0. Lesi sici sidinga onjiniyela ukuthi banake ukuphazamiseka nokucupha okungamanga kwama-MOSFET kulezi zimo, ikakhulukazi ezinhlelweni zokusebenza ze-MOSFET ezinamandla omkhawulo ophansi. Ngenxa yalesi sici, ngezinye izikhathi kuyadingeka ukuklama amandla e-off-voltage yomshayeli wesango enani elingalungile (kubhekiselwa kuhlobo lwe-N, uhlobo lwe-P nokunye) ukuze kugwenywe ukuphazamiseka nokucupha okungamanga.
3.Izici ze-coefficient zokushisa ezinhle ze-VDSon/RDSo. Isici sokuthi i-VDSon/RDSon inyuka kancane njengoba izinga lokushisa lendawo likhuphuka yenza kube nokwenzeka ukusebenzisa ama-MOSFET ngokuqondile ngokuhambisana. Amadivaysi e-Bipolar ahlukile kulokhu, ngakho ukusetshenziswa kwawo ngokuhambisana kuba nzima kakhulu. I-RDSon nayo izokhuphuka kancane njengoba i-ID ikhula. Lesi sici kanye nezici zokushisa ezinhle ze-junction kanye ne-RDSon yangaphezulu yenza i-MOSFET igweme ukuwohloka kwesibili njengamadivaysi e-bipolar. Nokho, kufanele kuqashelwe ukuthi umphumela walesi sici ulinganiselwe. Uma isetshenziswa ngokuhambisana, i-push-pull noma ezinye izinhlelo zokusebenza, awukwazi ukuthembela ngokuphelele ekuzilawuleni kwakho lesi sici. Ezinye izinyathelo ezibalulekile zisadingeka. Lesi sici siphinde sichaze ukuthi ukulahleka kokuqhuba kuba kukhudlwana emazingeni okushisa aphezulu. Ngakho-ke, ukunakwa okukhethekile kufanele kukhokhwe ekukhethweni kwemingcele lapho kubalwa ukulahlekelwa.
4. Izici ezingezinhle zezinga lokushisa le-ID, ukuqonda amapharamitha e-MOSFET nezici zayo eziyinhloko ze-ID kuzokwehla kakhulu njengoba izinga lokushisa lendawo likhuphuka. Lesi sici sikwenza kudingeke ukuthi kucatshangelwe amapharamitha e-ID yayo kumazinga okushisa aphezulu ngesikhathi sokuklama.
5. Izici ze-coefficient zokushisa ezingezinhle zekhono le-avalanche IER/EAS. Ngemva kokwenyuka kwezinga lokushisa lokuhlangana, nakuba i-MOSFET izoba ne-V(BR)DSS enkulu, kufanele kuqashelwe ukuthi i-EAS izoncishiswa kakhulu. Okusho ukuthi, ikhono layo lokumelana nama-avalanche ngaphansi kwezimo zokushisa eziphakeme libuthakathaka kakhulu kunalokho emazingeni okushisa avamile.
6. Amandla okuqhuba nokusebenza kokuhlehla kokuthola i-parasitic diode ku-MOSFET akukhona kangcono kunaleyo yama-diode ajwayelekile. Akulindelekile ukuthi isetshenziswe njengenkampani yenethiwekhi eyinhloko kuluphu ekwakhiweni. Ama-diode avimbelayo avame ukuxhunywa ochungechungeni ukuze enze ama-diode e-parasitic angasebenzi emzimbeni, futhi ama-diode ahambisanayo engeziwe asetshenziselwa ukwakha inkampani yenethiwekhi kagesi. Kodwa-ke, ingabhekwa njengenkampani yenethiwekhi esimweni sokuqhutshwa kwesikhashana noma ezinye izidingo zamanje ezincane ezifana nokulungiswa okuvumelanayo.
7. Ukukhuphuka ngokushesha kwamandla okudonsa amanzi kungase kubangele ukucupha okungamanga kwesango lokushayela, ngakho-ke lokhu kungenzeka kudinga ukucatshangelwa ezinhlelweni ezinkulu ze-dVDS/dt (amasekhethi ashintshashintsha ngokushesha ama-high-frequency).
Isikhathi sokuthumela: Dec-13-2023
