Asebenza kanjani ama-MOSFET?

1, I-MOSFETisingeniso

Isifinyezo se-FieldEffect Transistor (FET)) isihloko esithi MOSFET. ngenani elincane labathwali abazobamba iqhaza ekuqhubeni ukushisa, okwaziwa nangokuthi i-multi-pole transistor. Kungokwe-voltage mastering uhlobo lwe-semi-superconductor indlela. Kukhona ukumelana nokuphumayo kuphezulu (10^8 ~ 10^9Ω), umsindo ophansi, ukusetshenziswa kwamandla okuphansi, uhla olumile, kulula ukuhlanganisa, akukho mkhuba wesibili wokuwohloka, umsebenzi womshwalense wolwandle kanye nezinye izinzuzo, manje usushintshile. i-bipolar transistor kanye ne-transistor ye-junction yamandla yabahlanganyeli abaqinile.

 

2, izici ze-MOSFET

I-1, i-MOSFET iyidivayisi yokulawula i-voltage, isebenzisa i-VGS (isango lomthombo we-voltage) yokulawula i-ID (drain DC);

2, I-MOSFETokukhipha isigxobo se-DC sincane, ngakho-ke ukumelana nokukhishwa kukhulu.

I-3, ukusetshenziswa kwenani elincane labathwali ukuqhuba ukushisa, ngakho unesilinganiso esingcono sokuzinza;

I-4, iqukethe indlela yokunciphisa i-coefficient yokunciphisa kagesi incane kune-triode equkethe indlela yokunciphisa i-coefficient yokunciphisa;

5, ikhono le-MOSFET lokulwa nemisebe;

6, ngenxa yokungabikho komsebenzi ongalungile wokuhlakazeka kwe-oligon okubangelwa izinhlayiya ezihlakazekile zomsindo, ngakho-ke umsindo uphansi.

 

3, isimiso somsebenzi we-MOSFET

I-MOSFETisimiso sokusebenza emshweni owodwa, sithi "drain - umthombo phakathi kwe-ID egeleza esiteshini sesango kanye nesiteshi phakathi kwe-pn junction eyakhiwe ukuchema okuphambene kwe-ID yesango le-voltage master", ukunemba, i-ID igeleza ngobubanzi. wendlela, okungukuthi, indawo ephambanayo yesiteshi, wushintsho ekuchema okuhlanekezelwe kwe-pn junction, okukhiqiza isendlalelo sokuncipha Isizathu sokulawula ukuhluka okunwetshiwe. Olwandle olungachithi kahle lwe-VGS=0, njengoba ukunwetshwa kongqimba lwenguquko akukukhulu kakhulu, ngokusho kokwengezwa kwendawo kazibuthe ye-VDS phakathi kwe-drain-source, amanye ama-electron olwandle oluwumthombo adonswa khipha amanzi, okungukuthi, kunomsebenzi we-ID ye-DC kusuka ku-drain kuya emthonjeni. Isendlalelo esisesilinganisweni esikhuliswe ukusuka esangweni kuya emseleni senza umzimba wonke wesiteshi wenze uhlobo oluvimbayo, i-ID igcwale. Shayela leli fomu ngokucindezela. Okufanekisela isendlalelo soguquko esiteshini sesithiyo sonke, kunokuba amandla e-DC anqanyuliwe.

 

Ngenxa yokuthi akukho ukunyakaza okukhululekile kwama-electron kanye nezimbobo kungqimba lokuguqulwa, icishe ibe nezindawo zokuvikela i-insulating ngendlela efanelekile, futhi kunzima ukuthi umsinga ojwayelekile ugeleze. Kodwa-ke inkambu kagesi phakathi kombhobho - umthombo, empeleni, ungqimba olubili lokuxhumana lwe-drain kanye nesigxobo sesango eduze nengxenye engezansi, ngoba insimu kagesi ye-Drift idonsa ama-electron anesivinini esikhulu ngokusebenzisa isendlalelo soguquko. Ukushuba kwenkundla ye-Drift cishe kuhlala njalo kukhiqiza ukugcwala kwesigcawu se-ID.

 

Isekhethi isebenzisa inhlanganisela ye-P-channel MOSFET ethuthukisiwe kanye ne-N-channel MOSFET ethuthukisiwe. Uma okokufaka kuphansi, i-P-channel MOSFET iyaqhuba futhi okukhiphayo kuxhunywe kutheminali enhle yokuphakelwa kwamandla. Uma okokufaka kuphezulu, i-N-channel MOSFET iyaqhuba futhi okukhiphayo kuxhunywe endaweni yokunikeza amandla. Kule sekhethi, i-P-channel MOSFET kanye ne-N-channel MOSFET zihlala zisebenza ezifundeni eziphambene, okokufaka kwazo kwesigaba kanye nemiphumela kubuyiselwe emuva.