Amapharamitha afana nomthamo wesango kanye nokumelana ne-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) yizinkomba ezibalulekile zokuhlola ukusebenza kwayo. Okulandelayo yincazelo enemininingwane yale mingcele:
I. Amandla esango
Umthamo wesango ikakhulukazi uhlanganisa amandla okufaka (i-Ciss), amandla okukhiphayo (i-Coss) kanye namandla okudlulisa okuhlehlayo (i-Crss, eyaziwa nangokuthi i-Miller capacitance).
Amandla Wokufaka (Ciss):
INCAZELO: Amandla okokufaka amandla aphelele phakathi kwesango nomthombo kanye nokukhipha amanzi, futhi aqukethe amandla omthombo wesango (Cgs) kanye ne-gate drain capacitance (Cgd) exhunywe ngokuhambisana, okungukuthi Ciss = Cgs + Cgd.
Umsebenzi: Umthamo wokufaka uthinta isivinini sokushintsha se-MOSFET. Lapho i-capacitance yokufaka ishajwa ku-voltage embundwini, idivayisi ingavulwa; ikhishelwe enanini elithile, idivayisi ingavalwa. Ngakho-ke, isifunda sokushayela kanye ne-Ciss kunomthelela oqondile ekubambezelekeni kokuvula nokuvala kwedivayisi.
Amandla okukhiphayo (Coss):
Incazelo: Amandla okukhiphayo amandla aphelele phakathi kombhobho kanye nomthombo, futhi aqukethe amandla omthombo we-drain-source (Cds) kanye namandla esango lokudonsa (Cgd) ngokuhambisana, okungukuthi i-Coss = Cds + Cgd.
Iqhaza: Kuzinhlelo zokusebenza zokushintsha kancane, i-Coss ibaluleke kakhulu ngoba ingabangela ukuzwakala kwesekhethi.
I-Reverse Transmission Capacitance (Crss):
Incazelo: Amandla okudlulisa okubuyela emuva alingana nesango lokudonsa amanzi (Cgd) futhi kuvame ukubizwa ngokuthi amandla weMiller.
Iqhaza: Amandla okudlulisa okubuyela emuva iyipharamitha ebalulekile yezikhathi zokukhuphuka nokuwa kweswishi, futhi iphinde ithinte isikhathi sokulibaziseka kokuvala. Inani le-capacitance liyehla njengoba i-drain-source voltage inyuka.
II. On-resistance (Rds(on))
Incazelo: I-on-resistance ukumelana phakathi komthombo nokukhipha amanzi e-MOSFET esimweni esikuso ngaphansi kwezimo ezithile (isb., ukuvuza okukhethekile kwamanje, i-voltage yesango, nezinga lokushisa).
Izici ezithonyayo: Ukumelana nokumelana akulona inani elingaguquki, kuthintwa izinga lokushisa, izinga lokushisa liphezulu, i-Rds(on) inkulu. Ukwengeza, ukuphakama kwe-voltage ye-standard, ukuqina kwesakhiwo sangaphakathi se-MOSFET, ukuphakama okuhambisanayo kokumelana.
Okubalulekile: Lapho uklama ugesi oshintshayo noma isekethe yomshayeli, kuyadingeka ukuthi ucabangele ukumelana kwe-MOSFET, ngoba okwamanje okugeleza nge-MOSFET kuzodla amandla kulokhu ukumelana, futhi le ngxenye yamandla asetshenzisiwe ibizwa ngokuthi- ukulahlekelwa ukumelana. Ukukhetha i-MOSFET enokumelana okuphansi kunganciphisa ukulahlekelwa kokumelana.
Okwesithathu, amanye amapharamitha abalulekile
Ngokungeziwe kumandla wesango kanye nokumelana, i-MOSFET ineminye imingcele ebalulekile njenge:
I-V(BR)DSS (I-Drain Source Breakdown Voltage):I-voltage yomthombo wokudonsa amanzi lapho i-current egeleza emseleni ifinyelela inani elithile ezingeni lokushisa elithile futhi nomthombo wesango ufinyeziwe. Ngaphezu kwaleli nani, ithubhu ingase yonakaliswe.
I-VGS(th) (I-Threshold Voltage):I-voltage yesango edingekayo ukuze kubangele ukuthi kuqale ukwakhiwa kwesiteshi phakathi komthombo nokukhipha amanzi. Kuma-MOSFET ajwayelekile we-N-channel, i-VT icishe ibe ngu-3 kuya ku-6V.
I-ID (Isilinganiso Esiphezulu Sokudonsa Okuqhubekayo Kwamanje):Umkhawulo wamanje we-DC oqhubekayo ongavunyelwa yi-chip kuzinga lokushisa eliphezulu elilinganiselwe le-junction.
I-IDM (Ubuningi Bokudonsa Okudonsayo Kwamanje):Ibonisa ileveli ye-pulsed current idivayisi engakwazi ukuyiphatha, kanti i-pulsed current iphezulu kakhulu kune-DC eqhubekayo.
I-PD (umthamo omkhulu wokuchithwa kwamandla):idivayisi ingahlakaza ukusetshenziswa kwamandla okuphezulu.
Kafushane, amandla esango, ukumelana nokumelana neminye imingcele ye-MOSFET ibalulekile ekusebenzeni kwayo nasekusetshenzisweni kwayo, futhi idinga ukukhethwa futhi iklanywe ngokuvumelana nezimo nezidingo ezithile zohlelo lokusebenza.
Isikhathi sokuthumela: Sep-18-2024