I-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) inezigxobo ezintathu okuyizi:
Isango:G, isango le-MOSFET lilingana nesisekelo se-bipolar transistor futhi lisetshenziselwa ukulawula ukuqhutshwa nokunqanyulwa kwe-MOSFET. Kuma-MOSFET, i-voltage yesango (i-Vgs) inquma ukuthi ngabe isiteshi se-conductive sakhiwe phakathi komthombo kanye ne-drain, kanye nobubanzi kanye nokuhamba kwesiteshi sokuhambisa. Isango lenziwe ngezinto ezifana nensimbi, i-polysilicon, njll., futhi lizungezwe ungqimba oluvikelayo (ngokuvamile i-silicon dioxide) ukuvimbela okwamanje ukuthi kugeleze ngqo ngaphakathi noma ngaphandle kwesango.
Umthombo:S, umthombo we-MOSFET ulingana ne-emitter ye-bipolar transistor futhi yilapho kugeleza khona kwamanje. Kuma-MOSFET esiteshi esingu-N, umthombo uvame ukuxhunywa kutheminali enegethivu (noma phansi) yokuphakelwa kukagesi, kuyilapho kuma-MOSFET esiteshi se-P, umthombo uxhumeke kutheminali evumayo yokuphakelwa kwamandla. Umthombo ungenye yezingxenye ezibalulekile ezakha ishaneli yokuqhuba, ethumela ama-electron (N-channel) noma izimbobo (P-channel) emseleni lapho i-voltage yesango iphezulu ngokwanele.
Khipha amanzi:D, amanzi e-MOSFET alingana nomqoqi we-bipolar transistor futhi yilapho i-current egeleza khona. Umsele uvame ukuxhunywa kumthwalo futhi usebenza njengokuphumayo kwamanje kusekethe. Ku-MOSFET, i-drain ingesinye isiphetho se-conductive channel, futhi lapho i-voltage yesango ilawula ukwakheka komzila ohambayo phakathi komthombo kanye ne-drain, i-current ingageleza isuka emthonjeni ngokusebenzisa i-conductive channel kuya ku-drain.
Kafushane nje, isango le-MOSFET lisetshenziselwa ukulawula nokuvala, umthombo yilapho i-current iphuma khona, futhi i-drain yilapho i-current ingena khona. Ngokuhlangene, lezi zigxobo ezintathu zinquma isimo sokusebenza nokusebenza kwe-MOSFET. .
Isikhathi sokuthumela: Sep-26-2024
