I-IGBT (I-Insulated Gate Bipolar Transistor) kanye ne-MOSFET (i-Metal-Oxide-Semiconductor Field-Effect Transistor) kungamadivayisi amabili avamile asetshenziswa ngama-semiconductor asetshenziswa kabanzi kuma-electronics amandla. Yize zombili ziyizingxenye ezibalulekile ezinhlelweni ezahlukahlukene, zihluka kakhulu ezicini ezimbalwa. Ngezansi umehluko oyinhloko phakathi kwe-IGBT ne-MOSFET:
1. Isimiso Sokusebenza
- I-IGBT: I-IGBT ihlanganisa izici zakho zombili i-BJT (Bipolar Junction Transistor) kanye ne-MOSFET, iyenze ibe idivayisi eyingxube. Ilawula isisekelo se-BJT ngokusebenzisa amandla kagesi wesango le-MOSFET, yona elawula ukuqhutshwa nokunqamuka kwe-BJT. Yize izinqubo zokuqhuba nokunqamuka kwe-IGBT ziyinkimbinkimbi uma kuqhathaniswa, ifaka ukulahleka kwamandla kagesi aphansi kanye nokubekezelela amandla kagesi aphezulu.
- I-MOSFET: I-MOSFET iyi-transistor esebenza ensimini elawula ukusebenza kwe-semiconductor ngokusebenzisa i-voltage yesango. Lapho i-voltage yesango idlula i-voltage yomthombo, kwakheka ungqimba lwe-conductive, okuvumela ukugeleza kwamanje. Ngakolunye uhlangothi, lapho i-voltage yesango ingaphansi kombundu, isendlalelo se-conductive siyanyamalala, futhi yamanje ayikwazi ukugeleza. Ukusebenza kwe-MOSFET kulula, kunesivinini sokushintsha ngokushesha.
2. Izindawo Zokufaka Isicelo
- I-IGBT: Ngenxa yokubekezelela amandla kagesi aphezulu, ukulahleka kwamandla kagesi aphansi, kanye nokusebenza ngokushintsha okusheshayo, i-IGBT ifaneleka ngokukhethekile izinhlelo zokusebenza ezinamandla kakhulu, ezilahlekelwa kancane njengezishintshashintshayo, izishayeli zezimoto, imishini yokushisela, namandla kagesi angaphazamiseki (UPS) . Kulezi zinhlelo zokusebenza, i-IGBT ilawula kahle ukusebenza kwe-high-voltage kanye nokushintshashintsha kwamanje.
- I-MOSFET: I-MOSFET, ngokuphendula kwayo okusheshayo, ukumelana nokufakwayo okuphezulu, ukusebenza okuzinzile kokushintsha, kanye nezindleko eziphansi, isetshenziswa kabanzi kumandla aphansi, izinhlelo zokusebenza ezishintsha ngokushesha ezifana nogesi wemodi yokushintsha, ukukhanyisa, izikhulisamsindo, namasekhethi anengqondo. . I-MOSFET isebenza kahle kakhulu ezinhlelweni ezisebenza ngamandla aphansi kanye ne-low-voltage.
3. Izici Zokusebenza
- I-IGBT: I-IGBT iphumelela kakhulu ku-high-voltage, izinhlelo zokusebenza zamanje ngenxa yekhono layo lokusingatha amandla abalulekile ngokulahlekelwa okuphansi kokuqhutshwa, kodwa inesivinini sokushintsha esihamba kancane uma siqhathaniswa ne-MOSFET.
- I-MOSFET: Ama-MOSFET abonakala ngesivinini sokushintsha ngokushesha, ukusebenza kahle okuphezulu ezinhlelweni ezine-voltage ephansi, nokulahlekelwa kwamandla okuphansi kumafrikhwensi aphezulu okushintsha.
4. Ukushintshelana
I-IGBT ne-MOSFET yakhelwe futhi isetshenziselwa izinjongo ezihlukile futhi ayikwazi ukushintshwa. Ukukhetha ukuthi iyiphi idivayisi ozoyisebenzisa kuncike ohlelweni oluthile, izidingo zokusebenza, nokucatshangelwa kwezindleko.
Isiphetho
I-IGBT ne-MOSFET zihluke kakhulu ngokuya ngesimiso sokusebenza, izindawo zohlelo lokusebenza, nezici zokusebenza. Ukuqonda lo mehluko kusiza ekukhetheni idivayisi efanelekile yemiklamo ye-electronics yamandla, ukuqinisekisa ukusebenza kahle nokusebenza kahle kwezindleko.
Isikhathi sokuthumela: Sep-21-2024
