Namuhla, ngokuthuthuka okusheshayo kwesayensi nobuchwepheshe, ama-semiconductors asetshenziswa ezimbonini eziningi, laphoI-MOSFET ibuye ibhekwe njengethuluzi elivamile le-semiconductor, isinyathelo esilandelayo ukuqonda ukuthi yini umehluko phakathi kwezici ze-bipolar power crystal transistor namandla okukhipha i-MOSFET.
1, indlela yokusebenza
I-MOSFET ingumsebenzi odingekayo ukuze kuthuthukiswe i-voltage yokusebenza, imidwebo yesifunda ichaza kalula, ikhuthaze amandla amancane; I-power crystal transistor iwukugeleza kwamandla okugqugquzela ukuklanywa kohlelo kuyinkimbinkimbi kakhulu, ukukhuthaza ukucaciswa kokukhethwa kobunzima ukukhuthaza ukucaciswa kuzobeka engcupheni isivinini sokushintsha amandla esiphelele.
2, isivinini esiphelele sokushintshwa kwamandla kagesi
I-MOSFET ethintwa izinga lokushisa incane, amandla okukhipha amandla okushintsha amandla angaqinisekisa ukuthi ngaphezu kuka-150KHz; I-power crystal transistor inesikhathi esincane kakhulu sokushaja samahhala esikhawulela isivinini sayo sokushintsha ukunikezwa kwamandla, kodwa amandla ayo okukhiphayo ngokuvamile awabi ngaphezu kuka-50KHz.
3. Indawo yokusebenza ephephile
Amandla MOSFET ayinaso isisekelo sesibili, futhi indawo yokusebenza ephephile ibanzi; I-power crystal transistor inesimo sesisekelo sesibili, esikhawulela indawo yokusebenza ephephile.
I-4, i-electric conductor idinga i-voltage yokusebenza
AmandlaI-MOSFET iyingxenye yohlobo lwe-voltage ephezulu, imfuneko yokusebenza kwe-condution yokusebenza iphezulu, kune-coefficient yokushisa enhle; i-crystal transistor yamandla kungakhathaliseki ukuthi ingakanani imali imelana nemfuneko yokusebenza kagesi, i-voltage yokusebenza ye-conductor kagesi iphansi, futhi ine-coefficient engalungile yokushisa.
5, ukugeleza kwamandla aphezulu
I-MOSFET yamandla ekushintsheni kwamandla wesifunda sokuphakelwa kwamandla wesekethe yesekethe yokuphakela amandla njenge-switch supply yamandla, isebenza kanye nomsebenzi ozinzile phakathi nendawo, ukugeleza kwamandla okuphezulu kuphansi; kanye ne-crystal transistor yamandla esebenza kanye nomsebenzi ozinzile phakathi nendawo, ukugeleza kwamandla aphezulu kuphezulu.
6, Izindleko zomkhiqizo
Izindleko zamandla MOSFET ziphakeme kancane; izindleko ze-crystal triode yamandla ziphansi kancane.
7, Umphumela wokungena
I-MOSFET yamandla ayinawo umphumela wokungena; I-power crystal transistor inomphumela wokungena.
8, Ukushintsha ukulahlekelwa
Ukulahlekelwa kokushintsha kwe-MOSFET akukuhle; ukulahlekelwa kokushintsha kwe-crystal transistor kukhulu uma kuqhathaniswa.
Ngaphezu kwalokho, iningi lamandla e-MOSFET ahlanganisa amandla okumunca ukushaqeka, kuyilapho i-bipolar power crystal transistor cishe ayinayo i-diode emunca ukushaqeka ehlanganisiwe. wesiteshi sokuphepha sokugeleza kwamandla. Ishubhu lomphumela wenkundla ku-diode emunca ukushaqeka kuyo yonke inqubo yokucisha nge-diode evamile njengobukhona bokugeleza kwamanje kokuhlehla kokuhlehla, ngalesi sikhathi i-diode ngakolunye uhlangothi ukuze ikhiphe i-drain - umthombo we-pole positive phakathi nendawo enkulu kakhulu. ukukhuphuka kwezidingo zomsebenzi we-voltage yokusebenza, ngakolunye uhlangothi, kanye nokugeleza kwamanje kokuhlehla kokutakula.
Isikhathi sokuthumela: May-29-2024
