I-MOSFET ingenye yezingxenye eziyisisekelo kakhulu embonini ye-semiconductor. Kumasekhethi e-elekthronikhi, i-MOSFET imvamisa isetshenziswa kumasekethe esikhulisamandla noma ekushintsheni amasekethe okuphakela amandla futhi isetshenziswa kakhulu. Ngezansi,OLUKEYizokunikeza incazelo enemininingwane yomgomo wokusebenza we-MOSFET futhi ihlaziye ukwakheka kwangaphakathi kwe-MOSFET.
YiniI-MOSFET
I-MOSFET, i-Metal Oxide Semiconductor Filed Effect Transistor (MOSFET). Kuyi-transistor yomphumela wensimu engasetshenziswa kabanzi kumasekethe e-analog namasekethe edijithali. Ngokusho komehluko we-polarity "wesiteshi" sawo (isithwali esisebenzayo), singahlukaniswa ngezinhlobo ezimbili: "N-uhlobo" kanye "nohlobo lwe-P", okuvame ukubizwa ngokuthi i-NMOS ne-PMOS.
Isimiso sokusebenza se-MOSFET
I-MOSFET ingahlukaniswa ngohlobo lokuthuthukisa kanye nohlobo lokuncipha ngokuya ngemodi yokusebenza. Uhlobo lwesithuthukisi lubhekisela ku-MOSFET lapho kungekho voltage yokuchema esetshenziswayo futhi ingekho i-conisiteshi esidonsayo. Uhlobo lokuncipha lubhekisela ku-MOSFET lapho kungekho voltheji yokuchema esetshenziswayo. Kuzovela isiteshi se-conductive.
Ezinhlelweni zangempela, kukhona kuphela uhlobo lokuthuthukisa isiteshi se-N kanye nohlobo lwe-P-channel yokuthuthukisa ama-MOSFET. Njengoba ama-NMOSFET enokumelana okuncane kuhulumeni futhi kulula ukuwenza, i-NMOS ivame kakhulu kune-PMOS ezinhlelweni zokusebenza zangempela.
Imodi yokuthuthukisa i-MOSFET
Kukhona ukuhlangana kwe-PN okubuyela emuva okubili phakathi kwe-drain D kanye nomthombo S we-MOSFET yemodi yokuthuthukisa. Uma i-voltage yomthombo wesango i-VGS=0, ngisho noma i-VDS yomthombo wokukhipha amanzi yengezwa, kuhlala kukhona ukuhlangana kwe-PN esimweni esichemile, futhi awukho umgudu wokuhambisa phakathi komsele nomthombo (akukho ukugeleza kwamanje ). Ngakho-ke, i-ID yamanje yokukhipha amanzi=0 ngalesi sikhathi.
Ngalesi sikhathi, uma i-voltage eya phambili yengezwa phakathi kwesango nomthombo. Okungukuthi, i-VGS> 0, khona-ke inkambu kagesi enesango eliqondaniswe ne-P-type silicon substrate izokhiqizwa kungqimba lokuvikela i-SiO2 phakathi kwe-electrode yesango kanye ne-silicon substrate. Ngenxa yokuthi ungqimba lwe-oxide luyi-insulating, i-voltage VGS esetshenziswa esangweni ayikwazi ukukhiqiza okwamanje. I-capacitor ikhiqizwa nhlangothi zombili zongqimba lwe-oxide, futhi isekethe ye-VGS elinganayo ishaja le capacitor (i-capacitor). Futhi ukhiqize inkambu kagesi, njengoba i-VGS ikhuphuka kancane, ikhangwa i-voltage enhle yesango. Inani elikhulu lama-electron aqoqana ngakolunye uhlangothi lwale capacitor (i-capacitor) futhi adale umzila ohambayo wohlobo lwe-N ukusuka ku-drain kuya emthonjeni. Uma i-VGS idlula i-voltage yokuvula i-VT yeshubhu (ngokuvamile cishe ngo-2V), ishubhu le-N-channel liqala ukusebenza, likhiqize i-ID yamanje yokudonsa. Sibiza i-voltage yomthombo wesango lapho isiteshi siqala ukukhiqiza i-voltage yokuvula. Ngokuvamile kuvezwa njenge-VT.
Ukulawula usayizi we-voltage yesango i-VGS kushintsha amandla noma ubuthakathaka benkambu kagesi, futhi umphumela wokulawula usayizi we-ID yamanje yokudonsa ungafinyelelwa. Lokhu futhi kuyisici esibalulekile sama-MOSFET asebenzisa izinkambu zikagesi ukulawula zamanje, ngakho-ke abizwa nangokuthi ama-transistors womphumela wenkundla.
Isakhiwo sangaphakathi se-MOSFET
Ku-substrate ye-silicon yohlobo lwe-P ene-concentration yokungcola okuphansi, izifunda ezimbili ze-N+ ezinokugxiliswa kokungcola okuphezulu zenziwe, futhi ama-electrode amabili akhishwa nge-aluminium yensimbi ukuze asebenze njenge-drain d kanye nomthombo s ngokulandelana. Khona-ke ingaphezulu le-semiconductor limbozwa nge-silicon dioxide (SiO2) elincanyana kakhulu le-insulating layer, futhi i-electrode ye-aluminium ifakwa kungqimba oluvikelayo phakathi kwe-drain kanye nomthombo ukuze usebenze njengesango g. I-electrode B nayo ikhishwa ku-substrate, yenza i-MOSFET yemodi yokuthuthukisa isiteshi i-N. Kungokufanayo ngokwakhiwa kwangaphakathi kwama-MOSFET ohlobo lokuthuthukisa isiteshi se-P.
I-N-channel MOSFET nezimpawu zesekhethi ze-MOSFET zesiteshi se-P
Isithombe esingenhla sibonisa uphawu lwesekethe ye-MOSFET. Esithombeni, u-D ungumthombo, u-S ungumthombo, u-G uyisango, kanti umcibisholo ophakathi umele i-substrate. Uma umcibisholo ukhomba ngaphakathi, ubonisa i-MOSFET yesiteshi esingu-N, futhi uma umcibisholo ukhomba ngaphandle, ubonisa i-MOSFET yesiteshi sika-P.
I-Dual N-channel MOSFET, P-channel MOSFET kanye nezimpawu zesekhethi ze-MOSFET ze-N+P-channel
Eqinisweni, phakathi nenqubo yokukhiqiza ye-MOSFET, i-substrate ixhunywe kumthombo ngaphambi kokushiya imboni. Ngakho-ke, emithethweni ye-symbogy, uphawu lomcibisholo olumelela i-substrate kufanele futhi luxhunywe emthonjeni ukuze kuhlukaniswe i-drain kanye nomthombo. I-polarity ye-voltage esetshenziswa yi-MOSFET iyafana ne-transistor yethu yendabuko. I-N-channel ifana ne-NPN transistor. I-drain D ixhunywe ku-electrode eyakhayo futhi umthombo S uxhunywe ku-electrode eyinegethivu. Lapho isango G line-voltage ephozithivu, kwakhiwa umzila we-conductive bese i-N-channel MOSFET iqala ukusebenza. Ngokufanayo, i-P-channel iyafana ne-PNP transistor. I-drain D ixhunywe ku-electrode engalungile, umthombo S uxhunywe ku-electrode eqondile, futhi lapho isango G line-voltage engalungile, kwakhiwa umzila we-conductive futhi i-P-channel MOSFET iqala ukusebenza.
Isimiso sokulahlekelwa kokushintsha kwe-MOSFET
Kungakhathaliseki ukuthi i-NMOS noma i-PMOS, kukhona ukumelana kwangaphakathi kwe-conduction okukhiqizwa ngemva kokuvulwa, ukuze okwamanje kuzodla amandla kulokhu kumelana kwangaphakathi. Le ngxenye yamandla asetshenzisiwe ibizwa ngokuthi ukusetshenziswa kwe-condution. Ukukhetha i-MOSFET enokumelana okuncane kokwenziwa kwangaphakathi kuzonciphisa ngempumelelo ukusetshenziswa kokwenziwa. Ukumelana kwamanje kwangaphakathi kwama-MOSFET anamandla aphansi ngokuvamile kucishe kube amashumi ama-milliohm, futhi kukhona nama-miliohm amaningana.
Uma i-MOS ivuliwe futhi inqanyulwa, akumele ibonakale ngokuphazima kweso. I-voltage ezinhlangothini zombili ze-MOS izoba nokwehla okusebenzayo, futhi yamanje egeleza kuyo izoba nokukhuphuka. Ngalesi sikhathi, ukulahlekelwa kwe-MOSFET kungumkhiqizo we-voltage kanye ne-current, okuwukulahlekelwa kokushintsha. Ngokuvamile, ukulahlekelwa kokushintsha kukhulu kakhulu kunokulahlekelwa kwe-conductive, futhi ngokushesha imvamisa yokushintsha, ukulahlekelwa kukhulu.
Umkhiqizo we-voltage kanye nowamanje ngesikhathi sokuqhuba mkhulu kakhulu, okuholela ekulahlekelweni okukhulu kakhulu. Ukushintsha ukulahlekelwa kungancishiswa ngezindlela ezimbili. Enye iwukunciphisa isikhathi sokushintsha, esinganciphisa ngempumelelo ukulahlekelwa phakathi nokuvula ngakunye; enye iwukunciphisa imvamisa yokushintsha, enganciphisa inani lokushintshwa ngesikhathi seyunithi ngayinye.
Okungenhla kuyincazelo enemininingwane yomdwebo wesimiso sokusebenza se-MOSFET nokuhlaziywa kwesakhiwo sangaphakathi se-MOSFET. Ukuze ufunde kabanzi mayelana ne-MOSFET, wamukelekile ukuthintana no-OLUKEY ukuze ikunikeze ukwesekwa kobuchwepheshe be-MOSFET!
Isikhathi sokuthumela: Dec-16-2023
