1.Junction MOSFET pin identification
Isango leI-MOSFET yisisekelo se-transistor, futhi i-drain kanye nomthombo kungumqoqi kanye ne-emitter ye-i-transistor ehambisanayo. I-multimeter ukuya kugiya le-R × 1k, elinamapeni amabili okulinganisa ukumelana nokuya phambili nokuhlehla phakathi kwamaphini amabili. Lapho ukuphikiswa okumbili phambili kwamaphini = ukumelana nokuhlehla = KΩ, okungukuthi, izikhonkwane ezimbili zomthombo S kanye ne-drain D, enye iphinikhodi yisango elingu-G. Uma kuyiphini elingu-4ukuhlangana kwe-MOSFET, esinye isigxobo ukusetshenziswa kwesihlangu esiphansi.
2.Anqume isango
Ngepeni elimnyama le-multimeter ukuze uthinte i-MOSFET i-electrode engahleliwe, ipeni elibomvu ukuthinta amanye ama-electrode amabili. Uma kokubili ukumelana okulinganiselwe kukuncane, okubonisa ukuthi kokubili ukumelana okuhle, ithubhu ingeye-N-channel MOSFET, ukuxhumana okufanayo kwepeni elimnyama nakho kuyisango.
Inqubo yokukhiqiza inqume ukuthi i-drain kanye nomthombo we-MOSFET i-symmetrical, futhi ingashintshwa komunye nomunye, futhi ngeke ithinte ukusetshenziswa kwesekethe, isekethe nayo ijwayelekile ngalesi sikhathi, ngakho-ke asikho isidingo sokuhamba. ukwehlukana ngokweqile. Ukumelana phakathi kwe-drain kanye nomthombo cishe ama-ohms ayizinkulungwane ezimbalwa. Awukwazi ukusebenzisa le ndlela ukucacisa isango lohlobo lwesango elivalekile i-MOSFET. Ngenxa yokuthi ukumelana kokufakwayo kwale MOSFET kuphezulu kakhulu, futhi amandla aphakathi kwe-polar phakathi kwesango nomthombo mancane kakhulu, ukulinganisa okuncane njengenani elincane lenkokhelo, kungakhiwa phezu kwe-inter-polar. amandla kagesi aphezulu kakhulu, i-MOSFET kuzoba lula kakhulu ukuyonakalisa.
3.Ukulinganisa amandla okukhulisa ama-MOSFET
Uma i-multimeter isethelwe ku-R × 100, sebenzisa ipeni elibomvu ukuxhuma umthombo S, futhi usebenzise ipeni elimnyama ukuxhuma i-drain D, okufana nokwengeza i-voltage engu-1.5V ku-MOSFET. Ngalesi sikhathi inaliti ikhombisa inani lokumelana phakathi kwesigxobo se-DS. Ngalesi sikhathi ngomunwe wokuncinza isango G, i-voltage eyenziwe ngumzimba njengesignali yokufaka esangweni. Ngenxa yendima yokukhulisa i-MOSFET, i-ID ne-UDS izoshintsha, okusho ukuthi ukumelana phakathi kwesigxobo se-DS kushintshile, singabona ukuthi inaliti inokuphakama okukhulu kokushwibeka. Uma isandla sicindezela isango, ukushwibeka kwenaliti kuncane kakhulu, okungukuthi, ikhono lokukhulisa i-MOSFET alinamandla; uma inaliti ingenaso isenzo esincane, okubonisa ukuthi i-MOSFET ilimele.
Isikhathi sokuthumela: Jul-18-2024
