Uhlobo lwe-N, umgomo wokusebenza we-MOSFET wohlobo lwe-P we-essence uyafana, i-MOSFET yengezwa ngokuyinhloko ohlangothini lokufakwayo lwe-voltage yesango ukuze ulawule ngempumelelo uhlangothi oluphumayo lwe-drain current, i-MOSFET iyidivayisi elawulwa yi-voltage, ngokusebenzisa i-voltage eyengeziwe. esangweni ukuze ulawule izici zedivayisi, ngokungafani ne-triode yokwenza isikhathi sokushintsha ngenxa yesisekelo samanje esibangelwa umphumela wokushaja wesitoreji, ekushintsheni izinhlelo zokusebenza, i-MOSFET's In switching applications,I-MOSFET isivinini sokushintsha siyashesha kunaleso se-triode.
Ekushintsheni kukagesi, okuvame ukusetshenziswa i-MOSFET open drain circuit, i-drain ixhunywe kumthwalo njengoba ibizwa ngokuthi i-open drain, i-open drain circuit, umthwalo uxhunywe ekutheni i-voltage iphakeme kangakanani, ikwazi ukuyivula, icime umthwalo wamanje, iyithuluzi elifanele lokushintsha i-analog, okuyisimiso se-MOSFET sokushintsha amadivaysi, i-MOSFET ukwenza ukushintsha ngesimo samasekhethi amaningi.
Mayelana nokushintsha izinhlelo zokusebenza zokunikezwa kwamandla, lolu hlelo lokusebenza ludinga Ama-MOSFET ukwenza ngezikhathi ezithile, ukucisha, njengamandla kagesi e-DC-DC avame ukusetshenziswa kusiguquli sembabala esiyisisekelo sincike kuma-MOSFET amabili ukwenza umsebenzi wokushintsha, lezi zinguquko ngokushintshana ku-inductor ukuze zigcine amandla, zidedele amandla kumthwalo, zivame ukukhetha. amakhulukhulu we-kHz noma ngisho nangaphezu kuka-1 MHz, ikakhulukazi ngoba ukuphakama kwemvamisa ngaleso sikhathi, izingxenye kazibuthe ziba zincane. Ngesikhathi sokusebenza okujwayelekile, i-MOSFET ilingana nomqhubi, isibonelo, ama-MOSFET anamandla amakhulu, ama-MOSFET ama-voltage amancane, ama-circuits, ukunikezwa kwamandla ukulahlekelwa okuncane kokuqhutshwa kwe-MOS.
Amapharamitha e-MOSFET e-PDF, abakhiqizi be-MOSFET bamukele ngempumelelo ipharamitha ye-RDS (ON) ukuze ichaze i-impedance on-state, ekushintsheni izinhlelo zokusebenza, i-RDS (ON) iyisici esibaluleke kakhulu sedivayisi; imininingwane yedatha ichaza i-RDS (ON), i-voltage yesango (noma idrayivu) ye-VGS kanye neyamanje egeleza emshinini ihlobene, ngokushayela kwesango elanele, i-RDS (ON) iyipharamitha emile ngokuqhathaniswa; Ama-MOSFET abelokhu eqhutshwa ajwayele ukukhiqiza ukushisa, futhi amazinga okushisa akhuphuka kancane kancane angaholela ekwenyukeni kwe-RDS (ON);I-MOSFET Imininingwane yedatha icacisa ipharamitha ye-thermal impedance, echazwa njengekhono le-semiconductor junction yephakheji ye-MOSFET ukuqeda ukushisa, futhi i-RθJC ichazwa nje ngokuthi i-junction-to-case impedance yokushisa.
I-1, i-frequency iphezulu kakhulu, ngezinye izikhathi ukuphishekela ivolumu ngokweqile, kuzoholela ngokuqondile emazingeni aphezulu, i-MOSFET ekwenyukeni kokulahlekelwa, ukushisa okukhulu, ungenzi umsebenzi omuhle womklamo wokukhipha ukushisa okwanele, izinga eliphezulu, i-nominal. inani lamanje le-MOSFET, isidingo sokukhipha ukushisa okuhle ukuze ukwazi ukufeza; I-ID ingaphansi komkhawulo wamanje, kungase kube ukushisa okukhulu, isidingo samaheatsink asizayo anele.
I-2, amaphutha okukhethwa kwe-MOSFET namaphutha ekwahluleleni kwamandla, ukumelana kwangaphakathi kwe-MOSFET akucatshangelwa ngokugcwele, kuzoholela ngokuqondile ekwandeni kokuphazamiseka kokushintsha, lapho kubhekwana nezinkinga zokushisa ze-MOSFET.
3, ngenxa yezinkinga zokuklama isifunda, okuholela ekushiseni, ukuze i-MOSFET isebenze esimweni sokusebenza esilandelanayo, hhayi esimweni sokushintsha, okuyimbangela eqondile yokushisa kwe-MOSFET, isibonelo, i-N-MOS yenza ukushintsha, i-G- I-voltage yezinga kufanele ibe phezulu kunokunikezwa kwamandla ngama-V ambalwa, ukuze ukwazi ukuqhuba ngokugcwele, i-P-MOS ihlukile; ngokungabikho kokuvuleka ngokugcwele, ukwehla kwe-voltage kukhulu kakhulu, okuzoholela ekusetshenzisweni kwamandla, i-impedance ye-DC elinganayo inkulu, ukwehla kwe-voltage kuzokwanda, u-U * ngizophinde ngikhuphuke, ukulahlekelwa kuzoholela ekushiseni.
Isikhathi sokuthumela: Aug-01-2024
