Kunokuhlukahluka okuningi kwezimpawu zesekethe ezivame ukusetshenziselwa ama-MOSFET. Umklamo ovame kakhulu umugqa oqondile omelela isiteshi, imigqa emibili eqondile esiteshini emele umthombo nokukhipha amanzi, kanye nomugqa omfushane ohambisana nomzila kwesokunxele omele isango. Ngezinye izikhathi umugqa oqondile omelela isiteshi nawo uthathelwa indawo umugqa ophukile ukuze kuhlukaniseke phakathi kwemodi yokuthuthukisamosfet noma imodi yokunciphisa i-mosfet, ephinde ihlukaniswe yaba i-N-channel MOSFET kanye ne-P-channel MOSFET izinhlobo ezimbili zezimpawu zesifunda njengoba kuboniswe esithombeni (isiqondiso somcibisholo sihlukile).
Ama-MOSFET Amandla asebenza ngezindlela ezimbili eziyinhloko:
(1) Lapho i-voltage ephozithivu yengezwa ku-D no-S (i-drain positive, source negative) kanye ne-UGS=0, ukuhlangana kwe-PN esifundeni somzimba ongu-P kanye nesifunda sokukhipha amanzi ku-N kuchemile okuphambene, futhi akukho kudlula kwamanje phakathi kuka-D kanye no-S. Uma i-voltage ephozithivu engu-UGS yengezwa phakathi kuka-G no-S, akukho wamanje wesango ozogeleza ngenxa yokuthi isango livalekile, kodwa i-voltage ephozithivu esangweni izophusha izimbobo zisuke endaweni engu-P ngaphansi, futhi ama-electron amancane athwala khangwe endaweni yesifunda se-P Lapho i-UGS inkulu kune-voltage ethile ye-UT, ukugxila kwe-electron ebusweni besifunda se-P ngaphansi kwesango kuzodlula ukugxila kwembobo, ngaleyo ndlela kwenze i-P-type semiconductor antipattern layer N-type semiconductor. ; lesi singqimba se-antipattern sakha isiteshi sohlobo lwe-N phakathi komthombo nokukhipha amanzi, ukuze ukuhlangana kwe-PN kunyamalale, umthombo kanye ne-drain conductive, futhi i-ID yamanje yokudonsa igeleza emseleni. I-UT ibizwa ngokuthi i-voltage yokuvula noma i-threshold voltage, futhi uma i-UGS idlula i-UT, amandla e-conductive asebenza kakhulu, futhi i-ID iba nkulu. Uma i-UGS inkulu idlula i-UT, i-conductivity inamandla, i-ID inkulu.
(2) Uma u-D, S kanye ne-voltage e-negative (umthombo omuhle, i-drain negative), ukuhlangana kwe-PN kuchemile phambili, okulingana ne-diode ehlehlayo yangaphakathi (ingenazo izici zokuphendula okusheshayo), okungukuthi,I-MOSFET ayinawo amandla okuvinjwa okuhlanekezelwe, ingathathwa njengengxenye ye-conduction ephambene.
Ngo-I-MOSFET isimiso sokusebenza singabonakala, ukuqhutshwa kwayo kuphela abathwali be-polarity abahilelekile ekuqhubeni, eyaziwa nangokuthi i-unipolar transistor.Idrayivu ye-MOSFET ivame ukusekelwe ekuhlinzekeni kwamandla kagesi we-IC kanye nemingcele ye-MOSFET ukukhetha isifunda esifanele, i-MOSFET ngokuvamile isetshenziselwa ukushintsha. I-power supply drive circuit. Lapho uklama ugesi oshintshwayo kusetshenziswa i-MOSFET, abantu abaningi bacabangela ukumelana ne-on-resistance, i-voltage ephezulu, kanye nenani eliphezulu lamanje le-MOSFET. Kodwa-ke, abantu bavame ukucabangela lezi zici kuphela, ukuze isifunda sisebenze kahle, kodwa akusona isisombululo esihle sokuklama. Ukuze uthole idizayini enemininingwane eyengeziwe, i-MOSFET kufanele futhi icabangele eyayo imininingwane yepharamitha. Ukuze uthole i-MOSFET eqondile, umjikelezo wayo wokushayela, inani eliphakeme lamanje lokuphuma kwedrayivu, njll., kuzothinta ukusebenza kokushintsha kwe-MOSFET.
Isikhathi sokuthumela: May-17-2024
