Ukukhethwa kwe-MOSFET | I-N-Channel MOSFET Construction Principles

Isakhiwo se-Metal-Oxide-SemIconductor se-crystal transistor eyaziwa ngokuthiI-MOSFET, lapho ama-MOSFET ahlukaniswe abe ama-MOSFET ohlobo lwe-P kanye nama-MOSFET ohlobo lwe-N. Amasekethe adidiyelwe akhiwe ama-MOSFET abuye abizwe ngokuthi amasekethe ahlanganisiwe e-MOSFET, kanye namasekethe ahlobene kakhulu e-MOSFET akhiwe ama-PMOSFET kanyeAma-NMOSFET abizwa ngokuthi amasekethe ahlanganisiwe e-CMOSFET.

I-MOSFET ehlanganisa i-p-type substrate kanye nezindawo ezimbili ze-n-spreading ezinamavelu okugxila aphezulu ibizwa ngokuthi i-n-channel.I-MOSFET, kanye nesiteshi sokuhambisa esibangelwa umzila we-n-type conductive ubangelwa izindlela zokusabalalisa i-n ezindleleni ezimbili ze-n-spreading ezinamanani aphezulu okugxila lapho ithubhu iqhuba. Ama-MOSFET ajiyile we-n-channel ane-n-channel ebangelwa umzila oqhutshwayo lapho ukuchema okuhle kwesiqondiso kuphakanyiswa ngangokunokwenzeka esangweni futhi kuphela lapho ukusebenza komthombo wesango kudinga i-voltage yokusebenza edlula i-threshold voltage. I-n-channel depletion MOSFETs yilawo angakakulungeli ukungena kugesi wesango (ukusebenza komthombo wesango kudinga i-voltage yokusebenza enguziro). Ukuncipha kokukhanya kwe-n-channel I-MOSFET iyi-n-channel MOSFET lapho i-conductive channel ibangwa khona lapho i-voltage yesango (i-voltage yokusebenza yomthombo wesango inguziro) ingalungiswanga.

Amasekhethi ahlanganisiwe e-NMOSFET ayisekethe yokuphakela amandla kagesi ye-N-channel MOSFET, amasekhethi ahlanganisiwe e-NMOSFET, ukumelana nokokufaka kuphezulu kakhulu, iningi alidingeki ligaye ukumuncwa kokugeleza kwamandla, ngaleyo ndlela amasekethe ahlanganisiwe e-CMOSFET kanye ne-NMOSFET axhunywe ngaphandle kokuthi angenele. cabangela umthwalo wokugeleza kwamandla.Amasekhethi ahlanganisiwe e-NMOSFET, iningi lokukhethwa kweqembu elilodwa elivumelanayo lokushintshwa kwamandla amasekhethi okuphakela amandla kwesekethe Iningi lamasekethe ahlanganisiwe e-NMOSFET asetshenziswa isekethe yokuphakelwa kwamandla kagesi okushintshwayo okukodwa, kanye naku-9V ukuze uthole okwengeziwe. Amasekhethi ahlanganisiwe e-CMOSFET adinga kuphela ukusebenzisa isekethe yokuphakelwa kwamandla kagesi eshintshayo njengamasekhethi ahlanganisiwe e-NMOSFET, angaxhunywa namasekhethi ahlanganisiwe e-NMOSFET ngokushesha. Kodwa-ke, ukusuka ku-NMOSFET kuye ku-CMOSFET kuxhumeke ngokushesha, ngoba ukumelana nokukhishwa kwe-NMOSFET okuphumayo kungaphansi kophiko oluhlanganisiwe lwe-CMOSFET lokumelana nokhiye wokudonsa, ngakho-ke zama ukusebenzisa umehluko ongaba khona wokudonsa-up resistor R, inani le-resistor R liyi-R. ngokuvamile 2 kuya ku-100KΩ.

Ukwakhiwa kwe-N-channel ajiyile ama-MOSFET
Ku-silicon substrate yohlobo lwe-P enenani eliphansi lokugxilisa i-doping, kwenziwa izifunda ezimbili ze-N ezinenani eliphezulu lokugxilisa i-doping, futhi ama-electrode amabili akhishwa ngensimbi ye-aluminium ukuze asebenze njenge-drain d kanye nomthombo s, ngokulandelana.

Khona-ke engxenyeni ye-semiconductor surface masking ungqimba oluncane kakhulu lwe-silica insulating tube, ku-drain - umthombo we-insulating tube phakathi kwe-drain kanye nomthombo wenye i-electrode ye-aluminium, njengesango g.

Ku-substrate kuphinde kuholele i-electrode B, equkethe i-MOSFET ewugqinsi we-N-channel. Umthombo we-MOSFET kanye ne-substrate ngokuvamile zixhunywe ndawonye, iningi lamapayipi embonini sekuyisikhathi eside lixhunywe kuwo, isango layo namanye ama-electrode afakwe phakathi kwe-casing.