I-MOSFET Anti-Reverse Circuit

Okokuqala, umgomo oyisisekelo we-MOSFET anti-reverse circuit

I-MOSFET anti-reverse circuit isebenzisa izici zokushintsha ze-MOSFET, ngokulawula i-voltage yesango (G) ukuze ibone isekethe ivuliwe noma ivaliwe. Lapho i-polarity yokunikezwa kwamandla ilungile, i-voltage yesango yenza i-MOSFET esimweni sokuqhuba, yamanje ingageleza ngokujwayelekile; lapho i-polarity yokunikezwa kwamandla ihlehliswa, i-voltage yesango ayikwazi ukwenza ukuqhutshwa kwe-MOSFET, ngaleyo ndlela inqamule isifunda.

Okwesibili, ukugcwaliseka okuqondile kwesekethe ye-MOSFET anti-reverse

1. I-N-channel MOSFET anti-reverse circuit

I-N-channel MOSFETs ivamise ukusetshenziselwa ukubona amasekethe aphikisana nokuhlehla. Kusekhethi, umthombo (S) we-N-channel MOSFET uxhunywe kutheminali engeyinhle yomthwalo, idrayivu (D) ixhunywe kutheminali ephozithivu yokuphakelwa kukagesi, futhi isango (G) lixhunywe ku- itheminali eyinegethivu yokuphakelwa kwamandla nge-resistor noma elawulwa yisekethe yokulawula.

Uxhumano oluya phambili: i-terminal eqondile yokunikezwa kwamandla ixhunywe ku-D, futhi i-terminal negative ixhunywe ku-S. Ngalesi sikhathi, i-resistor inikeza i-voltage yomthombo wesango (VGS) ye-MOSFET, futhi uma i-VGS inkulu kunombundu. I-voltage (Vth) ye-MOSFET, i-MOSFET iqhuba, futhi i-current igeleza isuka kutheminali ephozithivu yokuphakelwa kwamandla ukuya emlayishweni nge-MOSFET.

Lapho ihlehliswa: itheminali ephozithivu yomthombo wamandla ixhunywe ku-S, futhi itheminali enegethivu ixhunywe ku-D. Ngalesi sikhathi, i-MOSFET isesimweni sokunqamuka futhi isekethe inqanyuliwe ukuze kuvikelwe umthwalo emonakalweni ngenxa yokuthi i-voltage yesango ayikwazi ukwenza i-VGS eyanele ukwenza ukuziphatha kwe-MOSFET (i-VGS ingaba ngaphansi kuka-0 noma ngaphansi kakhulu kune-Vth).

2. Iqhaza Lezingxenye Ezisizayo

I-Resistor: Isetshenziselwa ukuhlinzeka nge-voltage yomthombo wesango ye-MOSFET futhi ikhawule isango lamanje ukuvimbela ukulimala kwesango.

Isilawuli samandla kagesi: ingxenye yokuzikhethela esetshenziselwa ukuvimbela ugesi womthombo wesango ukuthi ungabi phezulu kakhulu futhi uphule i-MOSFET.

I-Parasitic Diode: I-parasitic diode (i-body diode) ikhona ngaphakathi kwe-MOSFET, kodwa umphumela wayo ngokuvamile awunakwa noma ugwenywe ukwakheka kwesekethe ukuze kugwenywe umphumela wayo olimazayo kumasekhethi aphikisana nokuhlehla.

Okwesithathu, izinzuzo ze-MOSFET anti-reverse circuit

Ukulahlekelwa okuphansi: I-MOSFET on-resistance incane, i-voltage on-resistance iyancipha, ngakho-ke ukulahlekelwa kwesifunda kuncane.

Ukuthembeka okuphezulu: umsebenzi we-anti-reverse ungenziwa ngomklamo olula wesifunda, futhi i-MOSFET ngokwayo inezinga eliphezulu lokuthembeka.

Ukuvumelana nezimo: amamodeli ahlukene we-MOSFET nemiklamo yesekethe ingakhethwa ukuze kuhlangatshezwane nezidingo ezihlukene zohlelo lokusebenza.

Izinyathelo zokuzivikela

Ekuklanyweni kwesekethe ye-MOSFET ephikisana nokuhlehla, udinga ukuqinisekisa ukuthi ukukhethwa kwama-MOSFET ukuhlangabezana nezidingo zohlelo lokusebenza, okuhlanganisa i-voltage, yamanje, isivinini sokushintsha kanye neminye imingcele.

Kuyadingeka ukucabangela umthelela wezinye izingxenye kumjikelezo, njenge-parasitic capacitance, inductance parasitic, njll, ukuze ugweme imiphumela emibi ekusebenzeni kwesifunda.

Ekusetshenzisweni okungokoqobo, ukuhlolwa okwanele nokuqinisekisa kuyadingeka futhi ukuze kuqinisekiswe ukuzinza nokuthembeka kwesekethe.

Kafushane, isifunda se-MOSFET esimelene nokuhlehla siyisikimu sokuvikela ukuphakelwa kwamandla esilula, esinokwethenjelwa futhi esilahlekelwa kancane esisetshenziswa kabanzi ezinhlelweni ezihlukahlukene ezidinga ukuvinjelwa kwe-polarity yamandla ahlehlayo.