I-lithium njengohlobo olusha lwamabhethri ahambisana nemvelo, sekuyisikhathi eside isetshenziswa kancane kancane ezimotweni zamabhethri. Akwaziwa ngenxa yezimpawu zamabhethri e-lithium iron phosphate aphinde ashajwa, okusebenzayo kufanele kube inqubo yokushajwa kwebhethri ukuze kugcinwe ukunakekelwa ukuze kuvinjelwe ukulahleka kwamandla okushajwa ngokweqile noma izinga lokushisa elingaphezu kwamandla ukuze kuqinisekiswe ukuthi ukuphepha kwebhethri elishajekayo kuyasebenza. Kodwa-ke, ukuvikelwa kwe-overcurrent kuwukuhlukaniswa kwayo yonke inqubo yokushaja kanye nokukhipha amazinga omsebenzi owedlulele, ngakho-ke ungakhetha kanjani ukucaciswa kwemodeli ye-MOSFET yamandla nezinhlelo zokuklama ezifanele isekethe yedrayivu?
Umsebenzi othize, osuselwe kuzinhlelo zokusebenza ezihlukene, uzosebenzisa amandla amaningana ama-MOSFET asebenza ngokufana ukuze kuncishiswe i-on-resistor kanye nokuthuthukisa izici ze-thermal conductivity. Konke ukusebenza okuvamile, phatha isignali yedatha ukuze ulawule i-MOSFET, i-lithium battery pack terminals P kanye ne-P-out voltage yezinhlelo zokusebenza. Ngalesi sikhathi, amandla e-MOSFET abesesimweni sokuqhuba, ukulahleka kwamandla kungukulahleka kokwenziwa kuphela, akukho ukulahleka kokushintsha kwamandla, ukulahleka kwamandla okuphelele kwamandla e-MOSFET akuphakeme, ukukhuphuka kwezinga lokushisa kuncane, ngakho-ke amandla e-MOSFET angakwazi. sebenza ngokuphepha.
Nokho, lapho load ikhiqiza iphutha le-short-circuit, umthamo we-short-circuit ngokuzumayo ukhuphuka usuka emashumini amaningana ama-ampere ukuze usebenze okuvamile ukuya emakhulwini amaningana ama-ampere ngoba ukumelana kwesekethe akukukhulu futhi ibhethri elishajekayo linomthamo wokushaja oqinile, namandla.Ama-MOSFET kulula kakhulu ukubhujiswa esimweni esinjalo. Ngakho-ke, uma kungenzeka, khetha i-MOSFET ene-RDS encane (ON), ukuze ibe mbalwaAma-MOSFET ingasetshenziswa ngokuhambisana. Ama-MOSFET amaningana ngokuhambisana asengozini yokungalingani kwamanje. Izimbangi zokucindezela ezihlukene nezifanayo ziyadingeka kuma-MOSFET afanayo ukuze kugwenywe ukushintshashintsha phakathi kwama-MOSFET.