Isingeniso somgomo wokusebenza wama-MOSFET anamandla amakhulu asetshenziswa kakhulu

Namuhla kumandla aphezulu asetshenziswa kakhuluI-MOSFETukwethula kafushane umgomo wayo wokusebenza. Bona ukuthi iwubona kanjani umsebenzi wayo.

I-Metal-Oxide-Semiconductor okungukuthi, i-Metal-Oxide-Semiconductor, leli gama lichaza ukwakheka kwe-MOSFET kusekethe edidiyelwe, okungukuthi: esakhiweni esithile sedivayisi ye-semiconductor, ehlanganiswe ne-silicon dioxide nensimbi, ukwakheka. wesango.

Umthombo nokukhipha amanzi kwe-MOSFET kuyaphikiswa, womabili amazoni ohlobo lwe-N akhiwe ku-backgate yohlobo lwe-P. Ezimweni eziningi, lezi zindawo ezimbili ziyefana, ngisho noma iziphetho ezimbili zokulungiswa ngeke zithinte ukusebenza kwedivayisi, idivayisi enjalo ibhekwa njenge-symmetrical.

Ukwahlukaniswa: ngokohlobo lwempahla yesiteshi kanye nohlobo lwesango elivalekile lesiteshi ngasinye esingu-N kanye nesiteshi se-P sesibili; ngokuya ngemodi yokuqhuba: I-MOSFET ihlukaniswe yaba yincithakalo kanye nokuthuthukiswa, ngakho-ke i-MOSFET ihlukaniswe ngokunciphisa nokuthuthukiswa kwesiteshi se-N; Ukuncipha kwesiteshi se-P kanye nokuthuthukiswa kwezigaba ezine ezinkulu.

Isimiso sokusebenza se-MOSFET - izici zesakhiwo seI-MOSFETiqhuba kuphela abathwali be-polarity (ama-polys) abathintekayo ku-conductive, i-transistor ye-unipolar. Indlela yokuqhuba iyafana ne-MOSFET enamandla aphansi, kodwa isakhiwo sinomehluko omkhulu, i-MOSFET enamandla aphansi iyisisetshenziswa sokuhambisa esivundlile, iningi lamandla e-MOSFET vertical conductive structure, eyaziwa nangokuthi i-VMOSFET, eyithuthukisa kakhulu i-MOSFET. I-voltage yedivayisi namandla okumelana namanje. Isici esiyinhloko ukuthi kukhona ungqimba lwe-silica insulation phakathi kwesango lensimbi kanye nesiteshi, ngakho-ke linokumelana okuphezulu kokufaka, ithubhu iqhuba ngokugxila okubili okuphezulu kwe-n diffusion zone ukuze yakhe i-n-type conductive channel. Ama-MOSFET okuthuthukisa i-n-channel kufanele asetshenziswe esangweni ngokuchema okuya phambili, futhi kuphela uma i-voltage yomthombo wesango inkulu kune-threshold voltage ye-conductive channel ekhiqizwa i-n-channel MOSFET. Ama-MOSFET ohlobo lwe-n-channel angama-MOSFET angu-n-channel lapho iziteshi eziqhubayo zenziwa khona lapho kungekho voltage yesango esetshenziswayo (i-voltage yomthombo wesango inguziro).

Umgomo wokusebenza kwe-MOSFET ukulawula inani "lemali ekhokhwayo" ngokusebenzisa i-VGS ukuguqula isimo sesiteshi sokuhambisa esakhiwe "inkokhelo ekhokhwayo", bese ufinyelela inhloso yokulawula i-drain current. Ekwenziweni kwamashubhu, ngenqubo yokuvikela ungqimba ekuveleni kwenani elikhulu lama-ion amahle, ngakho-ke ngakolunye uhlangothi lwesixhumi esibonakalayo kungenziwa ukukhokhiswa okubi kakhulu, lezi zinkokhelo ezimbi ekungeneni okuphezulu kokungcola ku-N. isifunda esixhunywe ekwakhiweni kwesiteshi sokuqhuba, ngisho naku-VGS = 0 kukhona ne-ID yamanje yokuvuza enkulu. lapho i-voltage yesango ishintshwa, inani lenkokhiso elenziwa esiteshini nalo liyashintshwa, kanye nobubanzi besiteshi esiqhutshwayo kanye nobuncane besiteshi noshintsho, kanjalo ne-ID yamanje yokuvuza ne-voltage yesango. I-ID yamanje iyahlukahluka nge-voltage yesango.

Manje isicelo ofI-MOSFETithuthukise kakhulu ukufunda kwabantu, ukusebenza kahle, ngenkathi ithuthukisa izinga lethu lempilo. Sinokuqonda okuhluzekile ngakho ngokuqonda okuthile okulula. Ngeke nje isetshenziswe njengethuluzi, ukuqonda okwengeziwe ngezici zayo, isimiso somsebenzi, esizosinika injabulo enkulu.