Amandla esango, ukumelana nokumelana neminye imingcele yama-MOSFET

I. Amandla esango

Umthamo wesango ikakhulukazi uhlanganisa amandla okufaka (i-Ciss), amandla okukhiphayo (i-Coss) kanye namandla okudlulisa okuhlehlayo (i-Crss, eyaziwa nangokuthi i-Miller capacitance).

Amandla Wokufaka (Ciss):

INCAZELO: Amandla okokufaka amandla aphelele phakathi kwesango nomthombo kanye nokukhipha amanzi, futhi aqukethe amandla omthombo wesango (Cgs) kanye ne-gate drain capacitance (Cgd) exhunywe ngokuhambisana, okungukuthi Ciss = Cgs + Cgd.

Umsebenzi: Umthamo wokufaka uthinta isivinini sokushintsha se-MOSFET. Lapho i-capacitance yokufaka ishajwa ku-voltage embundwini, idivayisi ingavulwa; ikhishelwe enanini elithile, idivayisi ingavalwa. Ngakho-ke, isifunda sokushayela kanye ne-Ciss kunomthelela oqondile ekubambezelekeni kokuvula nokuvala idivayisi.

Amandla okukhiphayo (Coss):

Incazelo: Amandla okukhiphayo amandla aphelele phakathi kombhobho kanye nomthombo, futhi aqukethe amandla omthombo we-drain-source (Cds) kanye namandla esango lokudonsa (Cgd) ngokuhambisana, okungukuthi i-Coss = Cds + Cgd.

Iqhaza: Kuzinhlelo zokusebenza zokushintsha kancane, i-Coss ibaluleke kakhulu ngoba ingabangela ukuzwakala kwesekhethi.

I-Reverse Transmission Capacitance (Crss):

Incazelo: Amandla okudlulisa okubuyela emuva alingana nesango lokudonsa amanzi (Cgd) futhi kuvame ukubizwa ngokuthi amandla weMiller.

Iqhaza: Amandla okudlulisa okubuyela emuva iyipharamitha ebalulekile yezikhathi zokukhuphuka nokuwa zeswishi, futhi iphinda ithinte isikhathi sokulibaziseka kokuvala. Inani le-capacitance liyehla njengoba i-drain-source voltage inyuka.

II. On-resistance (Rds(on))

Incazelo: I-on-resistance ukumelana phakathi komthombo nokukhipha amanzi e-MOSFET esimweni esikuso ngaphansi kwezimo ezithile (isb., ukuvuza okukhethekile kwamanje, i-voltage yesango, nezinga lokushisa).

Izici ezithonyayo: Ukumelana nokumelana akulona inani elingaguquki, kuthintwa izinga lokushisa, izinga lokushisa liphezulu, i-Rds(on) inkulu. Ukwengeza, ukuphakama kwe-voltage ye-standard, ukuqina kwesakhiwo sangaphakathi se-MOSFET, ukuphakama okuhambisanayo kokumelana.

Okubalulekile: Lapho uklama ugesi oshintshayo noma isekethe yomshayeli, kuyadingeka ukuthi ucabangele ukumelana kwe-MOSFET, ngoba okwamanje okugeleza nge-MOSFET kuzodla amandla kulokhu ukumelana, futhi le ngxenye yamandla asetshenzisiwe ibizwa ngokuthi- ukulahlekelwa ukumelana. Ukukhetha i-MOSFET enokumelana okuphansi kunganciphisa ukulahlekelwa kokumelana.

Okwesithathu, amanye amapharamitha abalulekile

Ngokungeziwe kumandla wesango kanye nokumelana, i-MOSFET ineminye imingcele ebalulekile njenge:

I-V(BR)DSS (I-Drain Source Breakdown Voltage):I-voltage yomthombo wokudonsa amanzi lapho i-current egeleza emseleni ifinyelela inani elithile ezingeni lokushisa elithile futhi nomthombo wesango ufinyeziwe. Ngaphezu kwaleli nani, ithubhu ingase yonakaliswe.

I-VGS(th) (I-Threshold Voltage):I-voltage yesango edingekayo ukuze kubangele ukuthi kuqale ukwakhiwa kwesiteshi phakathi komthombo nokukhipha amanzi. Kuma-MOSFET ajwayelekile we-N-channel, i-VT icishe ibe ngu-3 kuya ku-6V.

I-ID (Isilinganiso Esiphezulu Sokudonsa Okuqhubekayo Kwamanje):Umkhawulo wamanje we-DC oqhubekayo ongavunyelwa yi-chip kuzinga lokushisa eliphezulu elilinganiselwe le-junction.

I-IDM (Ubuningi Bokuphuma Kwamanje Okudabukile):Ibonisa ileveli ye-pulsed current idivayisi engakwazi ukuyiphatha, kanti i-pulsed current iphezulu kakhulu kune-DC eqhubekayo.

I-PD (umthamo omkhulu wokuchithwa kwamandla):idivayisi ingahlakaza ukusetshenziswa kwamandla okuphezulu.

Kafushane, amandla esango, ukumelana nokumelana neminye imingcele ye-MOSFET ibalulekile ekusebenzeni kwayo nasekusetshenzisweni kwayo, futhi idinga ukukhethwa futhi iklanywe ngokuvumelana nezimo nezidingo ezithile zohlelo lokusebenza.