Incazelo yepharamitha ngayinye yamandla ama-MOSFET

I-VDSS Maximum Drain-Source Voltage

Ngomthombo wesango ufinyeziwe, isilinganiso se-drain-source voltage (VDSS) yivoltheji ephezulu engasetshenziswa emthonjeni wokukhipha amanzi ngaphandle kokuqhekeka kwe-avalanche. Kuye ngezinga lokushisa, i-voltage yangempela yokuphuka kwe-avalanche ingaba ngaphansi kune-VDSS elinganiselwe. Ukuze uthole incazelo enemininingwane ye-V(BR)DSS, bheka i-Electrostatic

Ukuze uthole incazelo enemininingwane ye-V(BR)DSS, bheka izici ze-Electrostatic.

I-VGS Maximum Gate Source Voltage

Isilinganiso se-voltage ye-VGS yi-voltage ephezulu kakhulu engasetshenziswa phakathi kwezigxobo zomthombo wesango. Inhloso eyinhloko yokusetha lesi silinganiso se-voltage ukuvimbela ukulimala kwe-oxide yesango okubangelwa i-voltage ngokweqile. I-voltage yangempela i-oxide yesango engakwazi ukumelana nayo iphakeme kakhulu kune-voltage elinganiselwe, kodwa izohluka ngenqubo yokukhiqiza.

I-oxide yesango langempela ingakwazi ukumelana ne-voltage ephakeme kakhulu kune-voltage elinganiselwe, kodwa lokhu kuzohluka ngenqubo yokukhiqiza, ngakho-ke ukugcina i-VGS ngaphakathi kwe-voltage elinganisiwe kuzoqinisekisa ukwethembeka kwesicelo.

I-ID - Ukuvuza Okuqhubekayo Kwamanje

I-ID ichazwa njengobukhulu obuvumelekile obuqhubekayo be-DC yamanje ezingeni eliphezulu lokushisa elilinganiselwe le-junction, i-TJ(ubukhulu), kanye nezinga lokushisa elingaphezulu kweshubhu elingu-25°C noma ngaphezulu. Le pharamitha iwumsebenzi wokumelana nokushisa okulinganiselwe phakathi kwendawo yokuhlangana nekesi, i-RθJC, nezinga lokushisa lekesi:

Ukushintsha ukulahlekelwa akufakiwe ku-ID futhi kunzima ukugcina izinga lokushisa elingaphezulu kweshubhu liku-25°C (Tcase) ukuze lisetshenziswe ngokungokoqobo. Ngakho-ke, ukushintsha kwangempela kwamanje kuzinhlelo zokusebenza zokushintsha kanzima kuvame ukuba ngaphansi kwengxenye yesilinganiso se-ID @ TC = 25°C, ngokuvamile ebangeni lika-1/3 kuya ku-1/4. okuhambisanayo.

Ukwengeza, i-ID ezingeni lokushisa elithile ingalinganiselwa uma kusetshenziswa i-JA yokumelana nokushisa, okuyivelu engokoqobo kakhudlwana.

I-IDM - Impulse Drain Current

Le parameter ibonisa inani le-pulsed current idivayisi engakwazi ukuyiphatha, ephakeme kakhulu kune-DC eqhubekayo yamanje. Injongo yokuchaza i-IDM ithi: indawo ye-ohmic yomugqa. Ukuze uthole i-voltage ethile yomthombo wesango, iI-MOSFETiqhuba ngokukhipha umthamo omkhulu wamanje

okwamanje. Njengoba kuboniswe emfanekisweni, ku-voltage yomthombo wesango elinikeziwe, uma indawo yokusebenza isendaweni yomugqa, ukwanda kwamandla okukhipha amanzi kuphakamisa i-voltage ye-drain-source, okwandisa ukulahlekelwa kokuqhuba. Ukusebenza isikhathi eside kumandla aphezulu kuzoholela ekuhlulekeni kwedivayisi. Ngokwalesi sizathu

Ngakho-ke, i-IDM yegama idinga ukumiswa ngaphansi kwesifunda kuma-voltage avamile wokushayela esangweni. Iphoyinti lokusika lesifunda lisempambana-mgwaqo we-Vgs kanye nejika.

Ngakho-ke, umkhawulo ophezulu wokuminyana wamanje udinga ukusethwa ukuze uvimbele i-chip ukuthi ingashisi kakhulu futhi iphele. Lokhu empeleni ukuvimbela ukugeleza kwamanje okweqile ngomkhondo wephakheji, ngoba kwezinye izimo "uxhumano olubuthakathaka" kuyo yonke chip akuyona i-chip, kodwa iphakheji iyahola.

Uma kucatshangelwa imikhawulo yemiphumela eshisayo ku-IDM, ukukhuphuka kwezinga lokushisa kuncike ebubanzini be-pulse, isikhawu sesikhathi phakathi kwama-pulses, ukuchithwa kokushisa, i-RDS(on), kanye ne-waveform kanye ne-amplitude ye-pulse current. Ukwanelisa kalula ukuthi i-pulse current ayiweqi umkhawulo we-IDM akuqinisekisi ukuthi izinga lokushisa le-junction

aweqeli inani eliphakeme elivumelekile. Izinga lokushisa elihlanganayo ngaphansi kwe-pulsed current lingalinganiselwa ngokubhekisela engxoxweni yokumelana nokushisa kwesikhashana ku-Thermal and Mechanical Properties.

I-PD - Isamba Sokushabalaliswa kwamandla esiteshi esivumelekile

Isamba Sokushabalaliswa Kwamandla Esiteshi Esivunyelwe silinganisa ubukhulu bokuchithwa kwamandla okungahlakazwa idivayisi futhi kungavezwa njengomsebenzi wezinga lokushisa eliphezulu lendawo ehlanganayo kanye nokumelana nokushisa endaweni yokushisa engu-25°C.

TJ, TSTG - Operating and Storage Ambient Temperature Range

Lawa mapharamitha amabili alinganisa ububanzi bezinga lokushisa elivunyelwa indawo yokusebenza nesitoreji yedivayisi. Leli banga lokushisa lisethelwe ukuthi lihlangabezane nobuncane bempilo yokusebenza yedivayisi. Ukuqinisekisa ukuthi idivayisi isebenza ngaphakathi kwaleli banga lokushisa kuzonweba kakhulu impilo yayo yokusebenza.

I-EAS-Single Pulse Avalanche Breakdown Energy

 

Uma i-voltage overshoot (imvamisa ngenxa yokuvuza kwamanje kanye ne-stray inductance) ingeqi i-voltage yokuphuka, idivayisi ngeke ibhekane nokuphuka kwe-avalanche ngakho-ke ayidingi ikhono lokuhlakaza ukuphuka kwe-avalanche. Amandla okuqhekeka kwe-avalanche alinganisa i-overshoot yesikhashana idivayisi engakwazi ukubekezelela.

Amandla okuqhekeka kwe-avalanche achaza inani eliphephile le-voltage ye-overshoot yesikhashana idivayisi engakwazi ukubekezelela, futhi ancike enanini lamandla okudingeka ahlakazwe ukuze kwenzeke ukuphuka kwe-avalanche.

Idivayisi echaza isilinganiso samandla okuqhekeka kwe-avalanche ngokuvamile iphinda ichaze isilinganiso se-EAS, esifana nencazelo yesilinganiso se-UIS, futhi sichaza ukuthi angakanani amandla okuhlehla kwe-avalanche idivayisi engawamunca ngokuphephile.

L inani le-inductance futhi i-iD iyinani eliphakeme lamanje eligeleza ku-inductor, eliguqulwa kungazelelwe likhiphe amanzi kudivayisi yokulinganisa. I-voltage ekhiqizwa kuyo yonke i-inductor idlula i-voltage yokuhlukaniswa kwe-MOSFET futhi izoholela ekuqhekekeni kwe-avalanche. Lapho ukuphuka kwe-avalanche kwenzeka, okwamanje ku-inductor kuzogeleza kudivayisi ye-MOSFET nakuba i-I-MOSFETicishiwe. Amandla agcinwe ku-inductor afana namandla agcinwe ku-inductor elahlekile futhi ahlakazwa yi-MOSFET.

Uma ama-MOSFET exhunywe ngokufana, ama-voltage okuphuka awafani neze phakathi kwamadivayisi. Okuvame ukwenzeka ukuthi idivayisi eyodwa ingeyokuqala ukuzwa ukuphuka kwe-avalanche futhi wonke ama-avalanche alandelayo (amandla) ageleza kuleyo divayisi.

INDLEBE - Amandla Okuphindaphinda I-Avalanche

Amandla we-avalanche ephindaphindayo abe "izinga lemboni", kodwa ngaphandle kokusetha imvamisa, okunye ukulahlekelwa kanye nenani lokupholisa, le parameter ayinayo incazelo. Isimo sokukhipha ukushisa (ukupholisa) ngokuvamile silawula amandla e-avalanche aphindaphindayo. Kunzima futhi ukubikezela izinga lamandla akhiqizwa ukuwohloka kwe-avalanche.

Kunzima futhi ukubikezela izinga lamandla akhiqizwa ukuwohloka kwe-avalanche.

Incazelo yangempela yesilinganiso se-EAR ukulinganisa amandla okuqhekeka kwe-avalanche idivayisi engakwazi ukumelana nawo. Le ncazelo iphakamisa ukuthi akukho mkhawulo ekuvamiseni ukuze idivayisi ingashisi ngokweqile, okuyiqiniso kunoma iyiphi idivayisi lapho kungenzeka khona ukuphuka kwe-avalanche.

Kungumqondo omuhle ukukala izinga lokushisa ledivayisi esebenzayo noma usinki wokushisa ukuze ubone ukuthi idivayisi ye-MOSFET iyashisa yini ngesikhathi sokuqinisekiswa komklamo wedivayisi, ikakhulukazi kumadivayisi lapho kungenzeka khona ukuphuka kwe-avalanche.

I-IAR - I-Avalanche Breakdown Yamanje

Kwamanye amadivaysi, ukuthambekela konqenqema olusethiwe ku-chip ngesikhathi sokuqhekeka kwe-avalanche kudinga ukuthi i-Avalanche yamanje ye-IAR ikhawulelwe. Ngale ndlela, i-avalanche current iba "ukuphrinta okuhle" kokucaciswa kwamandla okuqhekeka kwe-avalanche; iveza ikhono langempela ledivayisi.

Ingxenye II I-Static Electrical Characterization

I-V(BR)DSS: I-Drain-Source Breakdown Voltage (I-Destruction Voltage)

I-V(BR)DSS (ngezinye izikhathi ibizwa ngokuthi i-VBDSS) ivolumu yomthombo wokukhipha amanzi lapho i-current egeleza emseleni ifinyelela inani elithile ezingeni lokushisa elithile futhi nomthombo wesango ufinyeziwe. I-drain-source voltage kuleli cala i-avalanche breakdown voltage.

I-V(BR)DSS iyi-coefficient yokushisa ephozithivu, futhi emazingeni okushisa aphansi i-V(BR)DSS ingaphansi kwesilinganiso esiphezulu sevoltheji yomthombo wokukhipha amanzi ku-25°C. Ku--50°C, i-V(BR)DSS ingaphansi kwesilinganiso esiphezulu se-drain-source voltage ku-50°C. Ku-50°C, i-V(BR)DSS cishe ilinganiselwa ku-90% wesilinganiso esiphezulu samandla kagesi womthombo wokukhipha amanzi ku-25°C.

I-VGS(th), i-VGS(ivaliwe): I-Threshold voltage

I-VGS(th) i-voltage lapho i-voltage yomthombo wesango eyengeziwe ingabangela ukudonsa amanzi ukuthi kuqale ukuba namandla, noma ukunyamalala lapho i-MOSFET icishiwe, kanye nezimo zokuhlola (i-drain current, i-drain source voltage, i-junction izinga lokushisa) nazo zicacisiwe. Imvamisa, wonke amadivayisi wesango le-MOS ahlukile

ama-threshold voltages azohluka. Ngakho-ke, ububanzi bokuhluka kwe-VGS(th) bucacisiwe.I-VGS(th) iyi-coefficient yezinga lokushisa elibi, lapho izinga lokushisa likhuphuka,I-MOSFETizovula ku-voltage yomthombo wesango ephansi uma kuqhathaniswa.

I-RDS(ivuliwe): Ukumelana nokumelana

I-RDS(on) iwukumelana nomthombo wokukhipha amanzi okukalwa ku-drain current ethile (imvamisa uhhafu we-ID yamanje), i-voltage yomthombo wesango, kanye no-25°C. I-RDS(on) iwukumelana nomthombo wokukhipha amanzi okukalwa ku-drain current ethile (imvamisa uhhafu we-ID yamanje), i-voltage yomthombo wesango, kanye no-25°C.

I-IDSS: Isango lokuphuma kwamandla kagesi elinguziro

I-IDSS iwukuvuza kwamanje phakathi kombhobho kanye nomthombo kuvoltheji ethile yomthombo wokudonsa amanzi lapho i-voltage yomthombo wesango inguziro. Njengoba ukuvuza kwamanje kukhuphuka ngezinga lokushisa, i-IDSS icaciswa kukho kokubili igumbi namazinga okushisa aphezulu. Ukuchithwa kwamandla ngenxa yokuvuza kwamandla kungabalwa ngokuphindaphinda i-IDSS ngevolthi phakathi kwemithombo yokukhipha amanzi, ngokuvamile enganaki.

I-IGSS - Umthombo Wesango Lokuvuza Kwamanje

I-IGSS iwukuvuza kwamanje okugeleza ngesango ku-voltage ethile yomthombo wesango.

Ingxenye III Izimpawu Zogesi Ezinamandla

I-Ciss : Amandla wokufaka

Amandla phakathi kwesango nomthombo, kukalwa ngesignali ye-AC ngokunciphisa i-drain emthonjeni, amandla okufaka; I-Ciss yakhiwa ngokuxhuma i-capacitance yokudonsa isango, i-Cgd, namandla omthombo wesango, i-Cgs, ngokuhambisana, noma i-Ciss = Cgs + Cgd. Idivayisi ivuliwe uma amandla okufakwayo eshajwa ku-voltage ye-threshold, futhi iyavalwa uma ikhishwa enanini elithile. Ngakho-ke, isekethe yomshayeli kanye neCiss inomthelela oqondile ekubambezelekeni kokuvula nokuvala kwedivayisi.

I-Coss : Amandla okukhiphayo

Amandla okukhiphayo amandla phakathi kombhobho kanye nomthombo olinganiswa ngesignali ye-AC lapho umthombo wesango ufinyezwa, i-Coss yenziwa ngokuhambisana nama-Cd we-drain-source capacitance kanye ne-gate-drain capacitance Cgd, noma i-Coss = Cds + Cgd. Kuzinhlelo zokusebenza zokushintsha kancane, i-Coss ibaluleke kakhulu ngoba ingabangela ukuzwakala kwesekhethi.

I-Crss : I-Reverse Transfer Capacitance

Umthamo olinganiswa phakathi komsele nesango ngomthombo osekelwe amandla okudlulisa okubuyela emuva. I-reverse capacitance yokudlulisa ilingana ne-gate drain capacitance, i-Cres = Cgd, futhi ivame ukubizwa ngokuthi i-Miller capacitance, okungenye yemingcele ebaluleke kakhulu yezikhathi zokukhuphuka nokuwa kweswishi.

Ipharamitha ebalulekile yezikhathi zokushintsha nokukhuphuka nokuwa, futhi ithinta nesikhathi sokulibaziseka kokuvala. I-capacitance iyancipha njengoba i-drain voltage ikhula, ikakhulukazi amandla okukhipha kanye namandla okudlulisa okuphambene.

Qgs, Qgd, and Qg: Gate Charge

Inani lokushajwa kwesango libonisa inkokhiso egcinwe ku-capacitor phakathi kwamatheminali. Njengoba ukushaja ku-capacitor kushintsha nge-voltage ngesikhathi sokushintsha, umphumela wokushaja kwesango uvame ukucatshangelwa lapho uklama izifunda zomshayeli wesango.

I-Qgs ​​inkokhelo esuka ku-0 iye endaweni yokuqala yokuguquguquka, i-Qgd ingxenye esukela kweyokuqala ukuya kweyesibili iphoyinti lokuguquguquka (ebizwa nangokuthi "i-Miller") ishaja), futhi i-Qg ingxenye esuka ku-0 iye endaweni lapho i-VGS ilingana nokushayela okuthile. i-voltage.

Izinguquko ku-voltage yomthombo wokuvuza wamanje kanye nokuvuza kunomphumela omncane kunani lokushaja kwesango, futhi ukushaja kwesango akushintshi nezinga lokushisa. Imibandela yokuhlola icacisiwe. Igrafu yokushajwa kwesango iboniswa eshidini ledatha, okuhlanganisa amajika ahambisanayo ahambisanayo nokushajwa kwesango lokuvuza okungaguquki kwamanje kanye nevolthi yomthombo wokuvuza ehlukahlukene.

Amajika ahambisanayo eshaje lesango lamandla okudonsa amanzi angaguquki kanye namandla omthombo wamandla okukhipha amanzi ahlukahlukene afakiwe kumininingwane. Kugrafu, i-voltage yasethafeni i-VGS(pl) inyuka kancane ngokwamanje ekhuphukayo (futhi yehla ngokuncipha kwamanje). I-voltage yasethafeni nayo ilingana ne-threshold voltage, ngakho-ke i-threshold voltage ehlukile izokhiqiza i-voltage ye-plateau ehlukile.

i-voltage.

Umdwebo olandelayo unemininingwane eminingi futhi usetshenzisiwe:

td(ku): isikhathi sokulibaziseka ngesikhathi

Isikhathi sokulibaziseka ngesikhathi yisikhathi esisuka lapho amandla kagesi omthombo wesango akhuphuka aye ku-10% we-voltage yedrayivu yesango kuya lapho ukuvuza kwamanje kukhuphukela ku-10% wamanje oshiwo.

td(off) : Isikhathi sokulibaziseka esivaliwe

Isikhathi sokulibaziseka kokucima yisikhathi esidlulile kusukela lapho amandla kagesi omthombo wesango ehla aze afike ku-90% we-voltage ye-gate drive kuya lapho ukuvuza kwamanje kwehla kuya ku-90% wamanje oshiwo. Lokhu kubonisa ukubambezeleka okutholwe ngaphambi kokuba okwamanje kudluliselwe ekulayisheni.

tr: Isikhathi Sokuvuka

Isikhathi sokukhuphuka yisikhathi esisithathayo ukuthi i-drain current inyuke isuka ku-10% iye ku-90%.

tf : Isikhathi sokuwa

Isikhathi sokuwa yisikhathi esisithathayo ukuthi i-drain current yehle isuka ku-90% iye ku-10%.