Umehluko phakathi kwamandla okukhiphayo e-MOSFET kanye ne-bipolar yamandla ecrystal triode

Namuhla, ngokuthuthuka okusheshayo kwesayensi nobuchwepheshe, ama-semiconductors asetshenziswa ezimbonini eziningi, laphoI-MOSFET ibuye ibhekwe njengethuluzi elivamile le-semiconductor, isinyathelo esilandelayo ukuqonda ukuthi yini umehluko phakathi kwezici ze-bipolar power crystal transistor namandla okukhipha i-MOSFET.

1, indlela yokusebenza

I-MOSFET ingumsebenzi odingekayo ukuze kuthuthukiswe i-voltage yokusebenza, imidwebo yesifunda ichaza kalula, ikhuthaze amandla amancane; I-power crystal transistor iwukugeleza kwamandla okugqugquzela ukuklanywa kohlelo kuyinkimbinkimbi kakhulu, ukukhuthaza ukucaciswa kokukhethwa kobunzima ukukhuthaza ukucaciswa kuzobeka engcupheni isivinini sokushintsha amandla esiphelele.

2, isivinini esiphelele sokushintsha kokunikezwa kwamandla

I-MOSFET ethintwa izinga lokushisa incane, amandla okukhipha amandla okushintsha amandla angaqinisekisa ukuthi ngaphezu kuka-150KHz; I-power crystal transistor inesikhathi esincane kakhulu sokushaja samahhala esikhawulela isivinini sayo sokushintsha ukunikezwa kwamandla, kodwa amandla ayo okukhiphayo ngokuvamile awabi ngaphezu kuka-50KHz.

3. Indawo yokusebenza ephephile

Amandla e-MOSFET ayinaso isisekelo sesibili, futhi indawo yokusebenza ephephile ibanzi; I-power crystal transistor inesimo sesisekelo sesibili, esikhawulela indawo yokusebenza ephephile.

I-4, i-electric conductor idinga i-voltage yokusebenza

AmandlaI-MOSFET iyingxenye yohlobo lwe-voltage ephezulu, imfuneko yokusebenza kwe-condution yokusebenza iphezulu, kune-coefficient yokushisa enhle; i-crystal transistor yamandla kungakhathaliseki ukuthi ingakanani imali imelana nemfuneko yokusebenza kagesi, i-voltage yokusebenza ye-conductor kagesi iphansi, futhi ine-coefficient engalungile yokushisa.

5, ukugeleza kwamandla aphezulu

I-MOSFET yamandla ekushintsheni kwamandla wesifunda sokuphakelwa kwamandla wesekethe yesekethe yokuphakela amandla njenge-switch supply yamandla, isebenza kanye nomsebenzi ozinzile phakathi nendawo, ukugeleza kwamandla okuphezulu kuphansi; kanye ne-crystal transistor yamandla esebenza kanye nomsebenzi ozinzile phakathi nendawo, ukugeleza kwamandla aphezulu kuphezulu.

6, Izindleko zomkhiqizo

Izindleko zamandla MOSFET ziphakeme kancane; izindleko ze-crystal triode yamandla ziphansi kancane.

7, Umphumela wokungena

I-MOSFET yamandla ayinawo umphumela wokungena; I-power crystal transistor inomphumela wokungena.

8, Ukushintsha ukulahlekelwa

Ukulahlekelwa kokushintsha kwe-MOSFET akukuhle; ukulahlekelwa kokushintsha kwe-crystal transistor kukhulu uma kuqhathaniswa.

Ngaphezu kwalokho, iningi lamandla e-MOSFET ahlanganisa amandla okumunca ukushaqeka, kuyilapho i-bipolar power crystal transistor cishe ayinayo i-diode emunca ukushaqeka ehlanganisiwe. wesiteshi sokuphepha sokugeleza kwamandla. Ishubhu lomphumela wenkundla ku-diode emunca ukushaqeka kuyo yonke inqubo yokucisha nge-diode evamile njengobukhona bokugeleza kwamanje kokuhlehla kokuhlehla, ngalesi sikhathi i-diode ngakolunye uhlangothi ukuze ikhiphe i-drain - umthombo we-pole positive phakathi nendawo enkulu kakhulu. ukukhuphuka kwezidingo zomsebenzi we-voltage yokusebenza, ngakolunye uhlangothi, kanye nokugeleza kwamanje kokuhlehla kokutakula.