Khuluma kafushane mayelana nendlela yokukhiqiza ye-MOSFET enamandla amakhulu idivayisi yokukhipha ukushisa

Uhlelo oluqondile: idivayisi enamandla aphezulu ye-MOSFET yokukhipha ukushisa, okuhlanganisa isikhwama sesakhiwo esingenalutho kanye nebhodi lesekethe. Ibhodi lesifunda lihlelwe ku-casing. Ama-MOSFET amaningi ahlangene axhunywe kuzo zombili iziphetho zebhodi lesifunda ngamaphini. Ihlanganisa futhi idivayisi yokucindezela i-Ama-MOSFET. I-MOSFET yenziwe ukuthi ibe seduze nebhulokhi yengcindezi yokulahla ukushisa odongeni lwangaphakathi lwekhesi. Ibhulokhi yokucindezela kokukhipha ukushisa inomzila wokuqala wamanzi ojikelezayo ogijima kuwo. Umzila wokuqala wamanzi ojikelezayo uhlelwe ngokuma mpo ngobuningi bama-MOSFET ahlangene. Udonga oluseceleni lwezindlu luhlinzekwa ngesiteshi samanzi esijikelezayo sesibili esihambisana nomzila wokuqala wamanzi ojikelezayo, kanti umzila wamanzi ojikelezayo wesibili useduze ne-MOSFET ehambisanayo. Ibhulokhi yengcindezi yokulahla ukushisa inikezwa ngezimbobo ezinezintambo ezimbalwa. Ibhulokhi yengcindezi yokulahla ukushisa ixhunywe ngokuqinile odongeni lwangaphakathi lwe-casing ngokusebenzisa izikulufu. Izikulufu zijikijelwa ezimbotsheni ezinentambo zebhulokhi yokucindezela kokukhipha ukushisa ukusuka ezimbotsheni ezinentambo ezisodongeni oluseceleni lwekhesi. Udonga lwangaphandle lwe-casing luhlinzekwa nge-groove yokukhipha ukushisa. Imigoqo yokusekela ihlinzekwa ezinhlangothini zombili zodonga lwangaphakathi lwezindlu ukuze kusekelwe ibhodi lesifunda. Lapho ibhulokhi yokucindezela kokukhipha ukushisa ixhunywe ngokuqinile odongeni lwangaphakathi lwezindlu, ibhodi lesifunda licindezelwa phakathi kwezindonga ezisemaceleni ze-block dissipation pressure block kanye nemigoqo yokusekela. Kukhona ifilimu ye-insulating phakathi kwe-I-MOSFETkanye nodonga lwangaphakathi lwe-casing, futhi kukhona ifilimu evikelayo phakathi kwebhulokhi yokucindezela kokukhipha ukushisa kanye ne-MOSFET. Udonga oluhlangothini lwegobolondo luhlinzekwa ngepayipi lokukhipha ukushisa elihambisana nesiteshi sokuqala samanzi ajikelezayo. Ingxenye eyodwa yepayipi yokukhipha ukushisa inikezwa nge-radiator, kanti enye ivaliwe. I-radiator kanye nepayipi yokushisa ukushisa yakha i-cavity yangaphakathi evaliwe, futhi i-cavity yangaphakathi inikezwa ngefriji. I-sink yokushisa ihlanganisa indandatho yokukhipha ukushisa exhunywe ngokuqinile epayipini lokukhipha ukushisa kanye ne-fin yokukhipha ukushisa exhunywe ngokuqinile endandeni yokukhipha ukushisa; i-sink yokushisa nayo ixhunywe ngokuqinile ku-fan yokupholisa.

Imiphumela ethile: Khulisa ukusebenza kahle kokukhipha ukushisa kwe-MOSFET futhi uthuthukise impilo yesevisi yeI-MOSFET; ngcono umphumela wokushisa ukushisa kwe-casing, ukugcina izinga lokushisa ngaphakathi kwe-casing lizinzile; isakhiwo esilula nokufakwa kalula.

Incazelo engenhla ingumbono nje wesixazululo sezobuchwepheshe sokusungulwa kwamanje. Ukuze kuqondwe ngokucacile izindlela zobuchwepheshe zokusungulwa kwamanje, kungenziwa ngokuya ngokuqukethwe yincazelo. Ukuze wenze lokhu okungenhla nezinye izinto, izici kanye nezinzuzo zokusungulwa kwamanje kucace kakhudlwana futhi kuqondakala, ama-embodiments athandwayo achazwe ngokuningiliziwe ngezansi kanye nemidwebo ehambisana nayo.

Idivayisi yokukhipha ukushisa ihlanganisa isakhiwo esingenalutho se-casing 100 kanye nebhodi lesifunda 101. Ibhodi lesifunda 101 lihlelwe ku-casing 100. Izinombolo ze-MOSFETs ezihlangene 102 zixhunywe kuzo zombili iziphetho zebhodi lesifunda 101 ngokusebenzisa izikhonkwane. Iphinde ihlanganise ne-block dissipation pressure block 103 yokucindezela i-MOSFET 102 ukuze i-MOSFET 102 isondele odongeni lwangaphakathi lwezindlu ze-100. I-block dissipation pressure block 103 inomzila wokuqala ojikelezayo wamanzi we-104 ogijima kuwo. Ishaneli yokuqala yamanzi ejikelezayo engu-104 ihlelwe ngokuma mpo nama-MOSFET amaningana ahlangene angu-102.
I-block dissipation pressure block 103 icindezela i-MOSFET 102 ngokumelene nodonga lwangaphakathi lwezindlu ze-100, futhi ingxenye yokushisa kwe-MOSFET 102 iqhutshwa endlini engu-100. Enye ingxenye yokushisa iqhutshwa ku-block dissipation block 103, futhi izindlu ezingu-100 zichitha ukushisa emoyeni. Ukushisa kwe-block dissipation block 103 kuthathwa ngamanzi apholisayo esiteshini sokuqala samanzi ajikelezayo i-104, okuthuthukisa umphumela wokushisa wokushisa we-MOSFET 102. Ngesikhathi esifanayo, ingxenye yokushisa okukhiqizwa ezinye izingxenye zezindlu. I-100 iphinde iqhutshwe ku-block dissipation pressure block 103. Ngakho-ke, i-block dissipation pressure block 103 inganciphisa kakhulu izinga lokushisa endlini. 100 kanye nokwenza ngcono ukusebenza kahle kanye nempilo yesevisi yezinye izingxenye zezindlu 100; I-casing 100 inesakhiwo esingenalutho, ngakho-ke ukushisa akuqoqwa kalula ku-casing 100, ngaleyo ndlela kuvimbela ibhodi lesifunda i-101 ekushiseni ngokweqile nasekushiseni. Udonga oluseceleni lwendlu engu-100 luhlinzekwa ngomsele wamanzi wesibili ojikelezayo ongu-105 ohambisana nomzila wokuqala wamanzi ojikelezayo ongu-104, kanti owesibili umzila wamanzi ojikelezayo u-105 useduze ne-MOSFET 102 ehambisanayo. Udonga lwangaphandle lwezindlu ezingu-100 luhlinzekwa nge-groove yokushisa ukushisa 108. Ukushisa kwezindlu ezingu-100 kukhishwa ikakhulukazi emanzini okupholisa kumzila wamanzi ojikelezayo wesibili u-105. Enye ingxenye yokushisa ichithwa nge-groove yokushisa ukushisa 108, okuthuthukisa umphumela wokushisa ukushisa kwezindlu 100. I-block dissipation pressure block 103 inikezwa ngezimbobo eziningana ezinezintambo 107. I-blood dissipation pressure block 103 ixhunywe ngokuqinile udonga lwangaphakathi lwendlu 100 ngokusebenzisa izikulufo. Izikulufu zijikijelwa ezimbotsheni ezinentambo zebhulokhi yokukhipha ukushisa engu-103 ukusuka emigodini enentambo ezindongeni eziseceleni zendlu engu-100.

Ekusungulweni kwamanje, ucezu oluxhumayo lwe-109 lusuka emaphethelweni e-block dissipation pressure block 103. Isiqephu sokuxhuma i-109 sinikezwa inombolo yezimbobo ezinezintambo ezingu-107. ngezikulufo. Imigoqo yokusekela i-106 inikezwa ezinhlangothini zombili zodonga lwangaphakathi lwezindlu ezingu-100 ukusekela ibhodi lesifunda 101. Lapho i-block dissipation pressure block 103 ixhunywe ngokuqinile odongeni lwangaphakathi lwezindlu ezingu-100, ibhodi lesifunda 101 licindezelwa phakathi izindonga eziseceleni ze-block dissipation pressure block 103 kanye nemigoqo yokusekela 106. Ngesikhathi sokufakwa, ibhodi lesifunda 101 lifakwa kuqala ubuso bebha yokusekela 106, futhi phansi kwe-block dissipation pressure block 103 icindezelwa endaweni engaphezulu yebhodi lesifunda 101. Khona-ke, i-block dissipation pressure block 103 igxilwe odongeni lwangaphakathi lwezindlu ezingu-100 ngezikulufo. . I-clamping groove yakhiwa phakathi kwe-block dissipation pressure block 103 kanye nebha yokusekela engu-106 ukuze ibambe ibhodi lesifunda 101 ukuze kube lula ukufakwa nokususwa kwebhodi lesifunda 101. Ngesikhathi esifanayo, ibhodi lesifunda 101 liseduze nokushisa kokushisa. i-pressure block 103. Ngakho-ke, ukushisa okukhiqizwa yibhodi lesifunda 101 kuqhutshwa ku-block dissipation pressure block 103, futhi i-block dissipation pressure block 103 ithathwa ngamanzi okupholisa esiteshini sokuqala samanzi ajikelezayo 104, ngaleyo ndlela kuvimbela ibhodi lesifunda 101 ekushiseni ngokweqile. nokuvutha. Okungcono, ifilimu evikelayo ilahlwa phakathi kwe-MOSFET 102 nodonga lwangaphakathi lwendlu engu-100, futhi ifilimu evikelayo ilahlwa phakathi kwe-block dissipation pressure block 103 kanye ne-MOSFET 102.

Idivaysi yokushisa ukushisa kwe-MOSFET enamandla amakhulu ihlanganisa isakhiwo esingenalutho se-casing 200 kanye nebhodi lesifunda 202. Ibhodi lesifunda 202 lihlelwe ku-casing 200. Inani lama-MOSFETs ahlangene 202 axhunywe kuzo zombili iziphetho zesekethe. ibhodi 202 ngokusebenzisa izikhonkwane, futhi ihlanganisa ne-block dissipation pressure block 203 yokucindezela ama-MOSFETs 202 ukuze ama-MOSFET 202 asondele odongeni lwangaphakathi lwezindlu ezingama-200. Ishaneli yamanzi yokuqala ejikelezayo engu-204 ihamba nge-block dissipation pressure block 203. Ishaneli yamanzi yokuqala ejikelezayo engu-204 ihlelwe ngokuqondile nama-MOSFET amaningana ahlangene 202. Udonga oluhlangothini lwegobolondo luhlinzekwa ngepayipi lokukhipha ukushisa 205 perpendicular to umgudu wokuqala wamanzi ojikelezayo 204, kanye nokuphela kwepayipi lokukhipha ukushisa 205 kunikezwe ngomzimba wokukhipha ukushisa 206. Omunye umkhawulo uvaliwe, futhi umzimba wokukhipha ukushisa 206 kanye nepayipi yokukhipha ukushisa 205 yakha imbobo yangaphakathi evaliwe, futhi isiqandisi sihlelwe emgodini ongaphakathi. I-MOSFET 202 ikhiqiza ukushisa futhi ihwamulise isiqandisi. Lapho ihwamuka, imunca ukushisa okuvela ekugcineni kokushisisa (eduze kokuphela kwe-MOSFET 202), bese igeleza isuka ekugcineni yokushisisa iye ekugcineni yokupholisa (kude nomkhawulo we-MOSFET 202). Uma ihlangana namakhaza ekugcineni kokupholisa, ikhulula ukushisa kumngcele ongaphandle wodonga lweshubhu. Uketshezi lube selugelezela ekugcineni kokushisisa, ngaleyo ndlela kwakheka isekethe yokukhipha ukushisa. Lokhu kukhishwa kokushisa ngokusebenzisa ukuhwamuka noketshezi kungcono kakhulu kunokukhipha ukushisa kwamakhondatha okushisa avamile. Umzimba wokukhipha ukushisa 206 uhlanganisa indandatho yokukhipha ukushisa 207 exhunywe ngokuqinile epayipini lokukhipha ukushisa 205 kanye ne-fin dissipation fin 208 exhunywe ngokuqinile kwindandatho yokukhipha ukushisa engu-207; i-heat dissipation fin 208 nayo ixhunywe ngokuqinile kufeni yokupholisa engu-209.

Indandatho yokushisa ukushisa engu-207 kanye nepayipi yokushisa ukushisa i-205 inebanga elide elifanele, ukuze indandatho yokushisa ukushisa i-207 ingakwazi ukudlulisa ngokushesha ukushisa epayipi yokukhipha ukushisa 205 ku-sink 208 ukuze kuzuzwe ukuchithwa kokushisa okusheshayo.