Ukuhlaziya ama-MOSFET Okuthuthukisa Nokuqedwa

I-D-FET isesigabeni sokuchema esingu-0 lapho ubukhona besiteshi, ingaqhuba i-FET; I-E-FET isesigabeni sokuchema esingu-0 uma singekho isiteshi, ayikwazi ukuqhuba i-FET. lezi zinhlobo ezimbili zama-FET zinezici zazo kanye nokusetshenziswa kwazo. Ngokuvamile, i-FET ethuthukisiwe kumasekhethi anesivinini esikhulu, amandla aphansi ibaluleke kakhulu; futhi lolu cingo luyasebenza, luyi-polarity yesango lokuchema vokhipha futhi ukhiphe I-voltage efanayo, ilula kakhulu ekwakhiweni kwesifunda.

Okubizwa ngokuthi izindlela ezithuthukisiwe: lapho i-VGS = 0 ithubhu iyisimo esinqunyiwe, kanye ne-VGS elungile, iningi labathwali likhangwa esangweni, ngaleyo ndlela "lithuthukisa" abathwali esifundeni, lenza umzila wokuqhuba. I-MOSFET ethuthukisiwe yesiteshi sika-n ngokuyisisekelo i-symmetrical topology yesokunxele, okuyi-semiconductor yohlobo lwe-P ekukhiqizeni ungqimba lwe-SiO2 insulation yefilimu. Ikhiqiza ungqimba oluvikelayo lwefilimu ye-SiO2 ku-semiconductor yohlobo lwe-P, bese ihlukanisa izifunda ezimbili ezinohlobo lwe-N olugcwele kakhului-photolithography, futhi ihola ama-electrode asuka endaweni yohlobo lwe-N, enye i-drain D nenye yomthombo S. Ungqimba lwensimbi ye-aluminium lubekwe phezu kongqimba oluvikelayo phakathi komthombo kanye ne-drain njengesango G. Lapho i-VGS = 0 V , kukhona ama-diode ambalwa anama-diode abuyela emuva phakathi komsele nomthombo futhi amandla kagesi phakathi kuka-D no-S awakhi i-current phakathi kuka-D no-S. Isimanje esiphakathi kuka-D no-S awakhiwa amandla kagesi asetshenzisiwe .

Lapho i-voltage yesango yengezwa, uma i-0 <VGS <VGS(th), ngokusebenzisa inkambu kagesi ene-capacitive eyakhiwe phakathi kwesango ne-substrate, izimbobo ze-polyon ku-semiconductor yohlobo lwe-P eduze naphansi kwesango zixoshwa phansi, futhi kuvela ungqimba oluncane lokuncipha kwama-ion angalungile; ngasikhathi sinye, izoheha ama-oligon akhona ukuthi adlulele kungqimba olungaphezulu, kodwa inombolo inqunyelwe futhi ayanele ukwenza umzila ohambisa amanzi nomthombo, ngakho-ke ayikanele Ukwakhiwa kwe-ID yamanje yokukhipha. ukwanda okwengeziwe VGS, lapho VGS > I-VGS (th) (VGS (th) ibizwa ngokuthi i-voltage yokuvula), ngoba ngalesi sikhathi i-voltage yesango ibinamandla ngokuqhathaniswa, kungqimba olungaphezulu lwe-semiconductor yohlobo lwe-P eduze naphansi kwesango ngaphansi kokuqoqwa kokuningi. ama-electron, ungakha umsele, umsele kanye nomthombo wokuxhumana. Uma i-voltage yomthombo wokukhipha amanzi yengezwa ngalesi sikhathi, i-drain current ingakhiwa i-ID. ama-electron esiteshini se-conductive esakhiwe ngaphansi kwesango, ngenxa yembobo yesithwali ene-P-type semiconductor polarity iphambene, ngakho ibizwa ngokuthi i-anti-type layer. Njengoba i-VGS iqhubeka nokukhula, i-ID izoqhubeka nokukhula. I-ID = 0 ku-VGS = 0V, futhi i-drain current ivela kuphela ngemva kwe-VGS > VGS(th), ngakho-ke, lolu hlobo lwe-MOSFET lubizwa ngokuthi ukuthuthukiswa kwe-MOSFET.

Ubudlelwano bokulawula be-VGS ku-drain current bungachazwa ngejika i-iD = f(VGS(th))|VDS=const, ebizwa ngokuthi ijika lesici sokudlulisa, kanye nobukhulu bomthamo wejika lesici sokudlulisa, i-gm, ibonisa ukulawulwa kwamandla okudonsa amanzi ngevolthi yomthombo wesango. ubukhulu be-gm yi-mA/V, ngakho-ke i-gm ibizwa nangokuthi i-transconductance.