I-WST8205 Dual N-Channel 20V 5.8A SOT-23-6L WINSOK MOSFET

imikhiqizo

I-WST8205 Dual N-Channel 20V 5.8A SOT-23-6L WINSOK MOSFET

incazelo emfushane:


  • Inombolo Yemodeli:I-WST8205
  • I-BVDSS:20V
  • RDSON:24mΩ
  • I-ID:5.8A
  • Isiteshi:I-Dual N-Channel
  • Iphakheji:I-SOT-23-6L
  • Ihlobo Lomkhiqizo:I-WST8205 MOSFET isebenza kuma-volts angu-20, isekela ama-amps angu-5.8 wamanje, futhi inokumelana nama-milliohms angu-24. I-MOSFET iqukethe i-Dual N-Channel futhi ihlanganiswe ku-SOT-23-6L.
  • Izicelo:Ugesi wezimoto, izibani ze-LED, okulalelwayo, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, izinto zikagesi zabathengi, amabhodi okuvikela.
  • Imininingwane Yomkhiqizo

    Isicelo

    Omaka bomkhiqizo

    Incazelo evamile

    I-WST8205 iwumzila osebenza kahle kakhulu we-N-Ch MOSFET onokuminyana kwamaseli aphezulu kakhulu, ehlinzeka nge-RDSON enhle kakhulu kanye nenkokhelo yesango yokushintsha amandla amancane kanye nezinhlelo zokusebenza zokushintsha ukulayisha. I-WST8205 ihlangabezana nezidingo ze-RoHS kanye noMkhiqizo Oluhlaza ngokuvunyelwa okugcwele kokuthembeka kokusebenza.

    Izici

    Ubuchwepheshe bethu obuthuthukisiwe buhlanganisa izici ezintsha ezenza le divayisi ihluke kwezinye emakethe. Njengoba kunemisele ephezulu yokuminyana kwamaseli, lobu buchwepheshe buvumela ukuhlanganiswa okukhulu kwezingxenye, okuholela ekusebenzeni okuthuthukisiwe nokusebenza kahle.Inzuzo ephawulekayo yalolu cingo ukushajwa kwesango okuphansi kakhulu. Ngenxa yalokho, kudinga amandla amancane ukushintsha phakathi kwezifunda zayo zokuvula nokuvala, okuholela ekunciphiseni kokusetshenziswa kwamandla kanye nokusebenza okuthuthukisiwe okupheleleyo. Lesi sici sokushajwa kwesango eliphansi sikwenza kube ukukhetha okuhle ezinhlelweni ezidinga ukushintshwa kwesivinini esikhulu kanye nokulawula okunembile.Ukwengeza, idivayisi yethu iphuma phambili ekwehliseni imiphumela ye-Cdv/dt. I-Cdv/dt, noma izinga lokushintsha kwamandla kagesi okukhipha amanzi kuye emthonjeni ngokuhamba kwesikhathi, kungabangela imiphumela engathandeki njengama-voltage spikes kanye nokuphazamiseka kazibuthe kagesi. Ngokunciphisa ngokuphumelelayo le miphumela, idivayisi yethu iqinisekisa ukusebenza okuthembekile nokuzinzile, ngisho nasezimweni ezinzima nezishintshayo. Yakhelwe kucatshangelwa ukusimama, kucatshangelwa izici ezifana nokusebenza kahle kwamandla nokuphila isikhathi eside. Ngokusebenza ngendlela esebenza kahle kakhulu yamandla, le divayisi inciphisa indawo yayo yekhabhoni futhi ibe negalelo ekubeni nekusasa eliluhlaza.Kafushane, idivayisi yethu ihlanganisa ubuchwepheshe obuthuthukisiwe nemisele yokuminyana kwamaseli, ukushajwa kwamasango aphansi kakhulu, kanye nokwehliswa okuhle kakhulu kwemiphumela ye-Cdv/dt. Ngokuklama kwayo okuhambisana nemvelo, ayigcini nje ngokuletha ukusebenza okuphakeme nokusebenza kahle kodwa futhi ihambisana nesidingo esikhulayo sezixazululo ezisimeme emhlabeni wanamuhla.

    Izinhlelo zokusebenza

    High Frequency Point-of-Load Synchronous Ukushintsha kwamandla amancane we-MB/NB/UMPC/VGA Networking DC-DC Power System,Automotive electronics, LED lights, audio, imikhiqizo yedijithali, izinto ezincane zasendlini, izinto zikagesi ezithengwayo, amabhodi okuvikela.

    inombolo yezinto ezibonakalayo

    AOS AO6804A,NXP PMDT290UNE,PANJIT PJS6816,Sinopower SM2630DSC,dintek DTS5440,DTS8205,DTS5440,DTS8205,RU8205C6.

    Imingcele ebalulekile

    Uphawu Ipharamitha Isilinganiso Amayunithi
    I-VDS I-Drain-Source Voltage 20 V
    VGS Isango-Umthombo Voltage ±12 V
    ID@Tc=25℃ I-Drain eqhubekayo yamanje, i-VGS @ 4.5V1 5.8 A
    ID@Tc=70℃ I-Drain eqhubekayo yamanje, i-VGS @ 4.5V1 3.8 A
    I-IDM I-Pulsed Drain Yamanje2 16 A
    PD@TA=25℃ Ukushabalaliswa kwamandla okuphelele3 2.1 W
    I-TSTG Ibanga Lokushisa Lesitoreji - 55 kuya ku-150
    TJ I-Operating Junction Temperature Range - 55 kuya ku-150
    Uphawu Ipharamitha Izimo Okuncane. Thayipha. Ubukhulu. Iyunithi
    I-BVDSS I-Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
    △BVDSS/△TJ I-BVDSS Temperature Coefficient Ireferensi ku-25℃ , ID=1mA --- 0.022 --- V/℃
    I-RDS(VULIWE) I-Static Drain-Source On-Resistance2 VGS=4.5V , ID=5.5A --- 24 28
           
        VGS=2.5V , ID=3.5A --- 30 45  
    I-VGS(th) I-Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.7 1.2 V
               
    △VGS(th) I-VGS(th) I-Temperature Coefficient   --- -2.33 --- mV/℃
    IDSS I-Drain-Source Ukuvuza kwamanje VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA
           
        VDS=16V , VGS=0V , TJ=55℃ --- --- 5  
    I-IGSS Ukuvuza Kwesango Lomthombo Wamanje VGS=±12V , VDS=0V --- --- ±100 nA
    gfs Phambili Transconductance VDS=5V , ID=5A --- 25 --- S
    Rg Isango Ukumelana VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω
    Qg Isamba Semali Yesango (4.5V) VDS=10V , VGS=4.5V , ID=5.5A --- 8.3 11.9 nC
    Qgs I-Gate-Source Charge --- 1.4 2.0
    Qgd I-Gate-Drain Charge --- 2.2 3.2
    I-Td(ivuliwe) Vula Isikhathi Sokubambezeleka VDD=10V , VGEN=4.5V , RG=6Ω

    I-ID=5A, RL=10Ω

    --- 5.7 11.6 ns
    Tr Isikhathi Sokuvuka --- 34 63
    Td(cishiwe) Ukuvala Isikhathi Sokubambezeleka --- 22 46
    Tf Isikhathi Sekwindla --- 9.0 18.4
    Ciss Amandla Wokufaka VDS=10V , VGS=0V , f=1MHz --- 625 889 pF
    I-Coss Amandla Okukhiphayo --- 69 98
    Crss I-Reverse Transfer Capacitance --- 61 88

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