Isiteshi se-WST2078 N&P 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WST2078

I-BVDSS:20V/-20V

RDSON:45mΩ/65mΩ

I-ID:3.8A/-4.5A

Isiteshi:Isiteshi se-N&P

Iphakheji:I-SOT-23-6L

Ihlobo Lomkhiqizo:I-WST2078 MOSFET inezilinganiso zamandla kagesi angu-20V kanye -20V. Ingakwazi ukuphatha imisinga ye-3.8A kanye -4.5A, futhi inamanani okumelana angu-45mΩ no-65mΩ. I-MOSFET inawo womabili amandla esiteshi se-N&P futhi iza nephakheji ye-SOT-23-6L.

Izicelo:Ogwayi be-elekthronikhi, izilawuli, imikhiqizo yedijithali, izinto zikagesi, nezinto zikagesi zabathengi.

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Imininingwane Yomkhiqizo

Isicelo

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Incazelo evamile

I-WST2078 iyi-MOSFET engcono kakhulu yokushintsha amandla amancane kanye nezinhlelo zokusebenza zokulayisha. Ine-cell density ephezulu ehlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango. Ihlangabezana nezidingo ze-RoHS kanye Nomkhiqizo Oluhlaza futhi igunyazelwe ukwethembeka okugcwele komsebenzi.

Izici

Ubuchwepheshe obuthuthukisiwe obunemisele yokuminyana kwamaseli aphezulu, ukushajwa kwesango okuphansi kakhulu, kanye nokwehliswa okuhle kakhulu kwemiphumela ye-Cdv/dt. Lo mshini futhi awuhambisani nemvelo.

Izinhlelo zokusebenza

Ukushintshwa kwamandla amancane okuhambisana nemvamisa ephezulu kulungele ukusetshenziswa ku-MB/NB/UMPC/VGA, amasistimu kagesi e-DC-DC enethiwekha, ama-switch switch, ama-e-cigarettes, izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, kanye nabathengi. electronics.

inombolo yezinto ezibonakalayo

I-AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

Imingcele ebalulekile

Uphawu	Ipharamitha	Isilinganiso		Amayunithi
Uphawu	Ipharamitha	Isiteshi se-N	Isiteshi se-P	Amayunithi
I-VDS	I-Drain-Source Voltage	20	-20	V
VGS	Isango-Umthombo Voltage	±12	±12	V
ID@Tc=25℃	I-Drain eqhubekayo yamanje, i-VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	I-Drain eqhubekayo yamanje, i-VGS @ 4.5V1	2.8	-2.6	A
I-IDM	I-Pulsed Drain Yamanje2	20	-13	A
PD@TA=25℃	Ukushabalaliswa kwamandla okuphelele3	1.4	1.4	W
I-TSTG	Ibanga Lokushisa Lesitoreji	- 55 kuya ku-150	- 55 kuya ku-150	℃
TJ	I-Operating Junction Temperature Range	- 55 kuya ku-150	- 55 kuya ku-150	℃

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	I-BVDSS Temperature Coefficient	Ireferensi ku-25℃ , ID=1mA	---	0.024	---	V/℃
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=4.5V , ID=3A	---	45	55	mΩ
		VGS=2.5V , ID=1A	---	60	80
		VGS=1.8V , ID=1A	---	85	120
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	0.7	1	V
△VGS(th)	I-VGS(th) I-Temperature Coefficient	VGS=VDS , ID =250uA	---	-2.51	---	mV/℃
IDSS	I-Drain-Source Ukuvuza kwamanje	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	I-Drain-Source Ukuvuza kwamanje	VDS=16V , VGS=0V , TJ=55℃	---	---	5	uA
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±8V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=1A	---	8	---	S
Rg	Isango Ukumelana	VDS=0V , VGS=0V , f=1MHz	---	2.5	3.5	Ω
Qg	Isamba Semali Yesango (4.5V)	VDS=10V , VGS=10V , ID=3A	---	7.8	---	nC
Qgs	I-Gate-Source Charge		---	1.5	---
Qgd	I-Gate-Drain Charge		---	2.1	---
I-Td(ivuliwe)	Vula Isikhathi Sokubambezeleka	VDD=10V , VGEN=4.5V , RG=6Ω I-ID=3A RL=10Ω	---	2.4	4.3	ns
Tr	Isikhathi Sokuvuka		---	13	23
Td(cishiwe)	Ukuvala Isikhathi Sokubambezeleka		---	15	28
Tf	Isikhathi Sekwindla		---	3	5.5
Ciss	Amandla Wokufaka	VDS=10V , VGS=0V , f=1MHz	---	450	---	pF
I-Coss	Amandla Okukhiphayo		---	51	---
Crss	I-Reverse Transfer Capacitance		---	52	---