I-WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Incazelo evamile
Ama-WST2011 MOSFET angama-P-ch transistors athuthuke kakhulu atholakalayo, aqukethe ukuminyana kwamaseli okungenakuqhathaniswa. Banikeza ukusebenza okukhethekile, nge-RDSON ephansi neshaje yesango, okubenza balungele ukushintsha kwamandla amancane kanye nezinhlelo zokusebenza zokushintsha ukulayisha. Ngaphezu kwalokho, i-WST2011 ihlangabezana namazinga e-RoHS kanye noMkhiqizo Ohlaza futhi iziqhayisa ngokuvunywa kokwethembeka komsebenzi ogcwele.
Izici
Ubuchwepheshe be-Advanced Trench buvumela ukuminyana kwamaseli okuphezulu, okuholela edivayisini eluhlaza ene-Super Low Gate Charge kanye nokwehla okuhle kakhulu komphumela we-CdV/dt.
Izinhlelo zokusebenza
Ukushintsha kwamandla amancane okuhambisana nemvamisa ephezulu kulungele ukusetshenziswa ku-MB/NB/UMPC/VGA, amasistimu kagesi e-DC-DC, izishintshi zokulayisha, ogwayi be-elekthronikhi, izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, nezinto zikagesi zabathengi. .
inombolo yezinto ezibonakalayo
KU-FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Imingcele ebalulekile
| Uphawu | Ipharamitha | Isilinganiso | Amayunithi | |
| 10s | Izwe elizinzile | |||
| I-VDS | I-Drain-Source Voltage | -20 | V | |
| VGS | Isango-Umthombo Voltage | ±12 | V | |
| ID@TA=25℃ | Ukukhipha Okuqhubekayo Kwamanje, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Ukukhipha Okuqhubekayo Kwamanje, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| I-IDM | I-Pulsed Drain Yamanje2 | -12 | A | |
| PD@TA=25℃ | Ukushabalaliswa kwamandla okuphelele3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Ukushabalaliswa kwamandla okuphelele3 | 1.2 | 0.9 | W |
| I-TSTG | Ibanga Lokushisa Lesitoreji | - 55 kuya ku-150 | ℃ | |
| TJ | I-Operating Junction Temperature Range | - 55 kuya ku-150 | ℃ | |
| Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
| I-BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | I-BVDSS Temperature Coefficient | Ireferensi ku-25℃ , ID=-1mA | --- | -0.011 | --- | V/℃ |
| I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 95 | 115 | |||
| I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | I-VGS(th) I-Temperature Coefficient | --- | 3.95 | --- | mV/℃ | |
| IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=-16V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=-5V , ID=-2A | --- | 8.5 | --- | S |
| Qg | Isamba Semali Yesango (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | I-Gate-Source Charge | --- | 1.1 | 1.7 | ||
| Qgd | I-Gate-Drain Charge | --- | 1.1 | 2.9 | ||
| I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Isikhathi Sokuvuka | --- | 9.3 | --- | ||
| Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 15.4 | --- | ||
| Tf | Isikhathi Sekwindla | --- | 3.6 | --- | ||
| Ciss | Amandla Wokufaka | VDS=-15V , VGS=0V , f=1MHz | --- | 750 | --- | pF |
| I-Coss | Amandla Okukhiphayo | --- | 95 | --- | ||
| Crss | I-Reverse Transfer Capacitance | --- | 68 | --- |
