I-WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSR200N08

I-BVDSS:80V

RDSON:2.9mΩ

I-ID:200A

Isiteshi:Isiteshi se-N

Iphakheji:KUYA ku-220-3L

Ihlobo Lomkhiqizo:I-WSR200N08 MOSFET ingakwazi ukuphatha kufika ku-80 volts kanye nama-amps angu-200 ngokumelana kwama-milliohms angu-2.9.Kuyidivayisi ye-N-channel futhi ifika ngephakheji ye-TO-220-3L.

Izicelo:Osikilidi be-elekthronikhi, amashaja angenawaya, izinjini, amasistimu okuphatha amabhethri, imithombo yamandla eyisipele, izimoto zasemoyeni ezingenamuntu, izinto zokunakekelwa kwempilo, okokusebenza kokushaja imoto kagesi, amayunithi okulawula, imishini yokuphrinta ye-3D, izinto zikagesi, izinto zikagesi ezincane zasendlini, nezinto zikagesi ezithengwayo.

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Imininingwane Yomkhiqizo

Isicelo

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Incazelo Ejwayelekile

I-WSR200N08 iwumzila wokusebenza ophakeme kakhulu we-N-Ch MOSFET onokuminyana kwamaseli aphezulu ngokwedlulele, ohlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango kuzinhlelo zokusebenza eziningi zokuguqula ibhake elivumelanayo.I-WSR200N08 ihlangabezana nemfuneko ye-RoHS kanye noMkhiqizo Oluhlaza, i-100% EAS eqinisekisiwe ngokwethembeka okugcwele okugunyaziwe.

Izici

Ubuchwepheshe be-Trench obuphezulu obusezingeni eliphezulu, Ukushajwa kwe-Super Low Gate, ukwehla komphumela omuhle kakhulu we-CdV/dt, i-100% EAS Guaranteed, Idivayisi Eluhlaza Iyatholakala.

Izinhlelo zokusebenza

Ukushintsha uhlelo lokusebenza, Ukuphathwa kwamandla kwe-Inverter Systems, ugwayi we-elekthronikhi, ukushaja okungenantambo, izinjini, i-BMS, izinsiza zikagesi eziphuthumayo, ama-drones, ezokwelashwa, ukushaja imoto, izilawuli, amaphrinta e-3D, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, izinto zikagesi zabathengi, njll.

inombolo yezinto ezibonakalayo

I-AO AOT480L, KU-FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, njll.

Imingcele ebalulekile

Izimpawu zikagesi (TJ=25℃, ngaphandle uma kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Isilinganiso	Amayunithi
I-VDS	I-Drain-Source Voltage	80	V
VGS	Isango-Umthombo Voltage	±25	V
ID@TC=25℃	I-Drain eqhubekayo yamanje, i-VGS @ 10V1	200	A
ID@TC=100℃	I-Drain eqhubekayo yamanje, i-VGS @ 10V1	144	A
I-IDM	I-Pulsed Drain Current2,TC=25°C	790	A
I-EAS	Amandla e-Avalanche, i-pulse eyodwa, L=0.5mH	1496	mJ
I-IAS	I-Avalanche yamanje, i-pulse eyodwa, L=0.5mH	200	A
PD@TC=25℃	Ukushabalaliswa kwamandla okuphelele4	345	W
PD@TC=100℃	Ukushabalaliswa kwamandla okuphelele4	173	W
I-TSTG	Ibanga Lokushisa Lesitoreji	-55 kuya ku-175	℃
TJ	I-Operating Junction Temperature Range	175	℃

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	80	---	---	V
△BVDSS/△TJ	I-BVDSS Temperature Coefficient	Ireferensi ku-25℃, ID=1mA	---	0.096	---	V/℃
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	I-VGS(th) I-Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Ukuvuza Komthombo Wamanje	VDS=80V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza Komthombo Wamanje	VDS=80V , VGS=0V , TJ=55℃	---	---	10	uA
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Isango Ukumelana	VDS=0V , VGS=0V , f=1MHz	---	3.2	---	Ω
Qg	Isamba Semali Yesango (10V)	VDS=80V , VGS=10V , ID=30A	---	197	---	nC
Qgs	I-Gate-Source Charge		---	31	---
Qgd	I-Gate-Drain Charge		---	75	---
I-Td(ivuliwe)	Vula Isikhathi Sokubambezeleka	VDD=50V , VGS=10V ,RG=3Ω, ID=30A	---	28	---	ns
Tr	Isikhathi Sokuvuka		---	18	---
Td(cishiwe)	Ukuvala Isikhathi Sokubambezeleka		---	42	---
Tf	Isikhathi Sekwindla		---	54	---
Ciss	Amandla Wokufaka	VDS=15V , VGS=0V , f=1MHz	---	8154	---	pF
I-Coss	Amandla Okukhiphayo		---	1029	---
Crss	I-Reverse Transfer Capacitance		---	650	---