I-WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSR140N12

I-BVDSS:120V

RDSON:5mΩ

I-ID:140A

Isiteshi:Isiteshi se-N

Iphakheji:KUYA ku-220-3L

Ihlobo Lomkhiqizo:I-voltage ye-WSR140N12 MOSFET ingu-120V, okwamanje yi-140A, ukumelana ngu-5mΩ, isiteshi yi-N-channel, kanti iphakheji yi-TO-220-3L.

Izicelo:Ukunikezwa kwamandla kagesi, ezokwelashwa, izinto zikagesi ezinkulu, i-BMS njll.

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Imininingwane Yomkhiqizo

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Incazelo evamile

I-WSR140N12 iwumzila ophakeme kakhulu wokusebenza we-N-ch MOSFET onokuminyana kwamaseli aphezulu ngokwedlulele, ohlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango kuzinhlelo zokusebenza eziningi zokuguqula ibhake elivumelanayo . I-WSR140N12 ihlangabezana nemfuneko ye-RoHS kanye noMkhiqizo Ohlaza , 100% EAS eqinisekisiwe ngokwethembeka okugcwele okugunyaziwe.

Izici

Ubuchwepheshe be-Trench obuphezulu obusezingeni eliphezulu, Ukushajwa kwe-Super Low Gate, ukwehla komphumela omuhle kakhulu we-CdV/dt, 100% EAS Guaranteed, Idivayisi Eluhlaza Iyatholakala.

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Imingcele ebalulekile

Uphawu	Ipharamitha	Isilinganiso	Amayunithi
I-VDS	I-Drain-Source Voltage	120	V
VGS	Isango-Umthombo Voltage	±20	V
ID	I-Continuous Drain Current, VGS @ 10V(TC=25℃)	140	A
I-IDM	I-Pulsed Drain yamanje	330	A
I-EAS	I-Single Pulse Avalanche Energy	400	mJ
PD	Ukushabalaliswa kwamandla okuphelele... C=25℃)	192	W
RJA	Ukumelana ne-thermal, i-junction-ambient	62	℃/W
RθJC	Ukumelana nokushisa, i-junction-case	0.65	℃/W
I-TSTG	Ibanga Lokushisa Lesitoreji	- 55 kuya ku-150	℃
TJ	I-Operating Junction Temperature Range	- 55 kuya ku-150	℃

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	120	---	---	V
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=10V , ID=30A	---	5.0	6.5	mΩ
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	---	4.0	V
IDSS	I-Drain-Source Ukuvuza kwamanje	VDS=120V , VGS=0V , TJ=25℃	---	---	1	uA
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±20V , VDS=0V	---	---	±100	nA
Qg	Isamba Semali Yesango	VDS=50V , VGS=10V , ID=15A	---	68.9	---	nC
Qgs	I-Gate-Source Charge		---	18.1	---
Qgd	I-Gate-Drain Charge		---	15.9	---
I-Td(ivuliwe)	Vula Isikhathi Sokubambezeleka	VDD=50V , VGS=10VRG=2Ω,ID=25A	---	30.3	---	ns
Tr	Isikhathi Sokuvuka		---	33.0	---
Td(cishiwe)	Ukuvala Isikhathi Sokubambezeleka		---	59.5	---
Tf	Isikhathi Sekwindla		---	11.7	---
Ciss	Amandla Wokufaka	VDS=50V , VGS=0V , f=1MHz	---	5823	---	pF
I-Coss	Amandla Okukhiphayo		---	778.3	---
Crss	I-Reverse Transfer Capacitance		---	17.5	---