I-WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

imikhiqizo

I-WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

incazelo emfushane:


  • Inombolo Yemodeli:I-WSP4888
  • I-BVDSS:30V
  • RDSON:13.5mΩ
  • I-ID:9.8A
  • Isiteshi:I-Dual N-Channel
  • Iphakheji:I-SOP-8
  • Ihlobo Lomkhiqizo:I-voltage ye-WSP4888 MOSFET ingu-30V, yamanje ingu-9.8A, ukumelana ngu-13.5mΩ, isiteshi siyi-Dual N-Channel, kanti iphakheji yi-SOP-8.
  • Izicelo:Ogwayi be-elekthronikhi, amashaja angenantambo, izinjini, ama-drones, ukunakekelwa kwezempilo, amashaja emoto, izilawuli, amadivaysi edijithali, izinto zikagesi ezincane, nezinto zikagesi zabathengi.
  • Imininingwane Yomkhiqizo

    Isicelo

    Omaka bomkhiqizo

    Incazelo evamile

    I-WSP4888 iyi-transistor esebenza kahle kakhulu enesakhiwo seseli eliminyene, elungele ukusetshenziswa kuziguquli zembabala ezivumelanisiwe. Inezinkokhelo ezinhle kakhulu ze-RDSON nesango, okwenza kube ukukhetha okuphezulu kulezi zinhlelo zokusebenza. Ukwengeza, i-WSP4888 ihlangabezana kokubili nezidingo ze-RoHS kanye ne-Green Product futhi iza nesiqinisekiso esingu-100% se-EAS somsebenzi othembekile.

    Izici

    I-Advanced Trench Technology ihlanganisa ukuminyana kwamaseli aphezulu kanye nokushajwa kwesango okuphansi kakhulu, okwehlisa kakhulu umphumela we-CdV/dt. Amadivayisi ethu eza nesiqinisekiso esingu-100% se-EAS nezinketho ezivumelana nemvelo.

    Ama-MOSFET ethu athatha izinyathelo eziqinile zokulawula ikhwalithi ukuze aqinisekise ukuthi ahlangabezana namazinga aphezulu kakhulu embonini. Iyunithi ngayinye ihlolelwa ukusebenza, ukuqina nokuthembeka, okuqinisekisa impilo ende yomkhiqizo. Ukwakheka kwayo okumazombezombe kuyenza ikwazi ukumelana nezimo zokusebenza ezidlulele, iqinisekise ukusebenza okungaphazamiseki kwemishini.

    Amanani ancintisanayo: Naphezu kwekhwalithi yawo ephezulu, ama-MOSFET ethu anenani elincintisanayo kakhulu, anikeza ukonga kwezindleko okubalulekile ngaphandle kokuphazamisa ukusebenza. Sikholelwa ukuthi bonke abathengi kufanele bakwazi ukufinyelela imikhiqizo yekhwalithi ephezulu, futhi isu lethu lentengo libonisa lokhu kuzibophezela.

    Ukuhambisana okubanzi: Ama-MOSFET ethu ahambisana nezinhlobonhlobo zezinhlelo zikagesi, okuwenza abe yinketho eguquguqukayo kubakhiqizi nakubasebenzisi bokugcina. Ihlanganisa ngaphandle komthungo ezinhlelweni ezikhona, ithuthukisa ukusebenza ngokuphelele ngaphandle kokudinga ukuguqulwa okukhulu kwedizayini.

    Izinhlelo zokusebenza

    I-High Frequency Point-of-Load Buck Converter ukuze isetshenziswe ezinhlelweni ze-MB/NB/UMPC/VGA, Networking DC-DC Power Systems, Ukushintsha Ukulayisha, Ogwayi be-E, Amashaja Angenantambo, Ama-Motor, Drones, Imishini yezokwelapha, Amashaja Ezimoto, Izilawuli , Imikhiqizo Yedijithali, Impahla Encane Yasekhaya, kanye Nogesi Wabathengi.

    inombolo yezinto ezibonakalayo

    I-AOS AO4832 AO4838 AO4914,KU-NTMS4916N,VISHAY Si4128DY,INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936,ruichips RU30D10

    Imingcele ebalulekile

    Uphawu Ipharamitha Isilinganiso Amayunithi
    I-VDS I-Drain-Source Voltage 30 V
    VGS Isango-Umthombo Voltage ±20 V
    ID@TC=25℃ I-Drain eqhubekayo yamanje, i-VGS @ 10V1 9.8 A
    ID@TC=70℃ I-Drain eqhubekayo yamanje, i-VGS @ 10V1 8.0 A
    I-IDM I-Pulsed Drain Yamanje2 45 A
    I-EAS I-Single Pulse Avalanche Energy3 25 mJ
    I-IAS I-Avalanche Yamanje 12 A
    PD@TA=25℃ Ukushabalaliswa kwamandla okuphelele4 2.0 W
    I-TSTG Ibanga Lokushisa Lesitoreji - 55 kuya ku-150
    TJ I-Operating Junction Temperature Range - 55 kuya ku-150
    Uphawu Ipharamitha Izimo Okuncane. Thayipha. Ubukhulu. Iyunithi
    I-BVDSS I-Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
    △BVDSS/△TJ I-BVDSS Temperature Coefficient Ireferensi ku-25℃ , ID=1mA --- 0.034 --- V/℃
    I-RDS(VULIWE) I-Static Drain-Source On-Resistance2 VGS=10V , ID=8.5A --- 13.5 18
           
        VGS=4.5V , ID=5A --- 18 25  
    I-VGS(th) I-Gate Threshold Voltage VGS=VDS , ID =250uA 1.5 1.8 2.5 V
               
    △VGS(th) I-VGS(th) I-Temperature Coefficient   --- -5.8 --- mV/℃
    IDSS I-Drain-Source Ukuvuza kwamanje VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA
           
        VDS=24V , VGS=0V , TJ=55℃ --- --- 5  
    I-IGSS Ukuvuza Kwesango Lomthombo Wamanje VGS=±20V , VDS=0V --- --- ±100 nA
    gfs Phambili Transconductance VDS=5V , ID=8A --- 9 --- S
    Rg Isango Ukumelana VDS=0V , VGS=0V , f=1MHz --- 1.8 2.9 Ω
    Qg Isamba Semali Yesango (4.5V) VDS=15V , VGS=4.5V , ID=8.8A --- 6 8.4 nC
    Qgs I-Gate-Source Charge --- 1.5 ---
    Qgd I-Gate-Drain Charge --- 2.5 ---
    I-Td(ivuliwe) Vula Isikhathi Sokubambezeleka VDD=15V , VGEN=10V , RG=6Ω

    I-ID=1A,RL=15Ω

    --- 7.5 9.8 ns
    Tr Isikhathi Sokuvuka --- 9.2 19
    Td(cishiwe) Ukuvala Isikhathi Sokubambezeleka --- 19 34
    Tf Isikhathi Sekwindla --- 4.2 8
    Ciss Amandla Wokufaka VDS=15V , VGS=0V , f=1MHz --- 590 701 pF
    I-Coss Amandla Okukhiphayo --- 98 112
    Crss I-Reverse Transfer Capacitance --- 59 91

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