I-WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSP4447

I-BVDSS:-40V

RDSON:13 mΩ

I-ID:-11A

Isiteshi:Isiteshi se-P

Iphakheji:I-SOP-8

Ihlobo Lomkhiqizo:I-voltage ye-WSP4447 MOSFET ingu-40V, yamanje ingu -11A, ukumelana ngu-13mΩ, isiteshi yi-P-Channel, kanti iphakheji yi-SOP-8.

Izicelo:Osikilidi be-elekthronikhi, amashaja angenawaya, izinjini, ama-drones, imishini yezokwelapha, amashaja azenzakalelayo, izilawuli, imikhiqizo yedijithali, izinto ezisetshenziswayo ezincane, nezinto zikagesi zabathengi.

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Incazelo evamile

I-WSP4447 iyi-MOSFET esebenza kahle kakhulu esebenzisa ubuchwepheshe bomsele futhi inomthamo omkhulu wamaseli. Inikeza i-RDSON enhle kakhulu nenkokhelo yesango, iyenze ifanelekele ukusetshenziswa ezinhlelweni eziningi zokuguqula ibhakede ezivumelanisiwe. I-WSP4447 ihlangabezana namazinga e-RoHS kanye Nomkhiqizo Oluhlaza, futhi iza nesiqinisekiso esingu-100% se-EAS sokuthembeka okugcwele.

Izici

Ubuchwepheshe be-Advanced Trench buvumela ukuminyana kwamaseli okuphezulu, okuholela edivayisini eluhlaza ene-Super Low Gate Charge kanye nokwehla okuhle kakhulu komphumela we-CdV/dt.

Izinhlelo zokusebenza

High Frequency Converter for Izinhlobonhlobo Electronics
Lesi siguquli siklanyelwe ukunika amandla ngempumelelo anhlobonhlobo yamadivayisi, okuhlanganisa amakhompyutha aphathekayo, amakhonsoli amageyimu, okokusebenza kwenethiwekhi, ogwayi be-elekthronikhi, amashaja angenawaya, izinjini, ama-drones, imishini yezokwelapha, amashaja emoto, izilawuli, imikhiqizo yedijithali, izinto zikagesi zasendlini ezincane, kanye nabathengi. electronics.

inombolo yezinto ezibonakalayo

I-AOS AO4425 AO4485,KU FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421,Sinopower SM4403PSK，RUICHIPS RU40L10H.

Imingcele ebalulekile

Uphawu	Ipharamitha	Isilinganiso	Amayunithi
I-VDS	I-Drain-Source Voltage	-40	V
VGS	Isango-Umthombo Voltage	±20	V
ID@TA=25℃	Ukudonsa Okuqhubekayo Kwamanje, VGS @ -10V1	-11	A
ID@TA=70℃	Ukudonsa Okuqhubekayo Kwamanje, VGS @ -10V1	-9.0	A
IDM a	300µs Pulsed Drain Current (VGS=-10V)	-44	A
I-EAS b	Amandla e-Avalanche, i-Single pulse (L=0.1mH)	54	mJ
IAS b	I-Avalanche yamanje, i-pulse eyodwa (L=0.1mH)	-33	A
PD@TA=25℃	Ukushabalaliswa kwamandla okuphelele4	2.0	W
I-TSTG	Ibanga Lokushisa Lesitoreji	- 55 kuya ku-150	℃
TJ	I-Operating Junction Temperature Range	- 55 kuya ku-150	℃

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	I-BVDSS Temperature Coefficient	Ireferensi ku-25℃ , ID=-1mA	---	-0.018	---	V/℃
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=-10V , ID=-13A	---	13	16	mΩ
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2					mΩ
		VGS=-4.5V , ID=-5A	---	18	26
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =-250uA	-1.4	-1.9	-2.4	V
		VGS=VDS , ID =-250uA
△VGS(th)	I-VGS(th) I-Temperature Coefficient		---	5.04	---	mV/℃
IDSS	I-Drain-Source Ukuvuza kwamanje	VDS=-32V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	I-Drain-Source Ukuvuza kwamanje					uA
		VDS=-32V , VGS=0V , TJ=55℃	---	---	-5
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=-5V , ID=-10A	---	18	---	S
Qg	Isamba Semali Yesango (-4.5V)	VDS=-20V , VGS=-10V , ID=-11A	---	32	---	nC
Qgs	I-Gate-Source Charge		---	5.2	---
Qgd	I-Gate-Drain Charge		---	8	---
I-Td(ivuliwe)	Vula Isikhathi Sokubambezeleka	VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	14	---	ns
Tr	Isikhathi Sokuvuka		---	12	---
Td(cishiwe)	Ukuvala Isikhathi Sokubambezeleka		---	41	---
Tf	Isikhathi Sekwindla		---	22	---
Ciss	Amandla Wokufaka	VDS=-15V , VGS=0V , f=1MHz	---	1500	---	pF
I-Coss	Amandla Okukhiphayo		---	235	---
Crss	I-Reverse Transfer Capacitance		---	180	---