I-WSP4088 N-channel 40V 11A SOP-8 WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSP4088

I-BVDSS:40V

RDSON:13 mΩ

I-ID:11A

Isiteshi:Isiteshi se-N

Iphakheji:I-SOP-8

Ihlobo Lomkhiqizo:I-voltage ye-WSP4088 MOSFET ingu-40V, yamanje ingu-11A, ukumelana ngu-13mΩ, isiteshi yi-N-channel, kanti iphakheji yi-SOP-8.

Izicelo:Ugwayi we-elekthronikhi, ukushaja okungenantambo, amamotho, ama-drones, ezokwelapha, ukushaja imoto, izilawuli, imikhiqizo yedijithali, izinto ezisetshenziswayo zasendlini ezincane, ugesi wabathengi, njll.

Thumela Uphenyo PDF

Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Incazelo evamile

I-WSP4088 iwumzila ophakeme kakhulu wokusebenza we-N-channel MOSFET enomthamo wamaseli ophakeme kakhulu ohlinzeka nge-RDSON enhle kakhulu kanye nokushajwa kwesango kwezinhlelo zokusebenza eziningi zokuguqulela ibhake elivumelanayo. I-WSP4088 ithobelana ne-RoHS kanye nezidingo zomkhiqizo oluhlaza, isiqinisekiso esingu-100% se-EAS, ukwethembeka okugcwele kokusebenza kugunyaziwe.

Izici

Amadivayisi Athembekile Futhi Aqinile, Aholayo Amahhala Naluhlaza Ayatholakala

Izinhlelo zokusebenza

Ukuphatha Amandla Kukhompyutha Yedeskithophu noma Iziguquli ze-DC/DC,Ugwayi we-elekthronikhi, ukushaja okungenantambo, izinjini, ama-drones, ezokwelashwa, ukushaja imoto, izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, izinto zikagesi zabathengi, njll.

inombolo yezinto ezibonakalayo

I-AO AO4884 AO4882,KU-FDS4672A,PANJIT PJL9424,DINTEK DTM4916 njll.

Imingcele ebalulekile

Izilinganiso Eziphelele Eziphelele (TA = 25 C Ngaphandle Kwalapho Kuphawulwe Ngaphandle kwalokho)

Uphawu	Ipharamitha		Isilinganiso	Iyunithi
Izilinganiso Ezivamile
I-VDSS	I-Drain-Source Voltage		40	V
I-VGSS	Isango-Umthombo Voltage		±20	V
TJ	I-Maximum Junction Temperature		150	°C
I-TSTG	Ibanga Lokushisa Lesitoreji		- 55 kuya ku-150	°C
IS	I-Diode Eqhubekayo Yamanje	TA=25°C	2	A
ID	Ukukhipha Okuqhubekayo Kwamanje	TA=25°C	11	A
ID	Ukukhipha Okuqhubekayo Kwamanje	TA=70°C	8.4
IDM a	I-Pulsed Drain yamanje	TA=25°C	30
PD	Ukukhipha Amandla Okukhulu	TA=25°C	2.08	W
PD	Ukukhipha Amandla Okukhulu	TA=70°C	1.3	W
RqJA	I-Thermal Resistance-Junction to Ambient	ngo £10s	30	°C/W
RqJA	I-Thermal Resistance-Junction to Ambient	Izwe elizinzile	60
RqJL	I-Thermal Resistance-Junction to lead	Izwe elizinzile	20
IAS b	I-Avalanche yamanje, i-Single pulse	L=0.1mH	23	A
I-EAS b	Amandla e-Avalanche, i-Single pulse	L=0.1mH	26	mJ

Qaphela:Ubukhulu. yamanje inqunyelwe ngocingo lokubopha.
Qaphela b:I-UIS ihloliwe futhi ububanzi be-pulse bukhawulelwe izinga lokushisa eliphezulu le-junction engu-150oC (izinga lokushisa lokuqala Tj=25oC).

Izimpawu Zogesi (TA = 25 C Ngaphandle Uma Kungaziwa)

Uphawu	Ipharamitha	Izimo Zokuhlola		Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
Izici Eziqinile
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	I-Zero Gate Voltage Drain yamanje	VDS=32V, VGS=0V		-	-	1	mA
IDSS	I-Zero Gate Voltage Drain yamanje		TJ=85°C	-	-	30	mA
I-VGS(th)	I-Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.5	1.8	2.5	V
I-IGSS	Ukuvuza Kwesango Lamanje	VGS=±20V, VDS=0V		-	-	±100	nA
I-RDS(ON) c	I-Drain-Source On-state Resistance	VGS=10V, IDS=7A		-	10.5	13	mW
			TJ=125°C	-	15.75	-
		VGS=4.5V, IDS=5A		-	12	16
Gfs	Phambili Transconductance	VDS=5V, IDS=15A		-	31	-	S
Izici ze-Diode
I-VSD c	I-Diode Forward Voltage	I-ISD=10A, VGS=0V		-	0.9	1.1	V
trr	Isikhathi Sokubuyisela emuva	VDD=20V,ISD=10A, dlSD/dt=100A/ms		-	15.2	-	ns
ta	Isikhathi sokushaja			-	9.4	-
tb	Isikhathi Sokukhipha			-	5.8	-
Qrr	Buyisela Imali Yokubuyisela			-	9.5	-	nC
Izimpawu Ezinamandla d
RG	Isango Ukumelana	VGS=0V,VDS=0V,F=1MHz		0.7	1.1	1.8	W
Ciss	Amandla Wokufaka	VGS=0V,VDS=20V,Frequency=1.0MHz		-	1125	-	pF
I-Coss	Amandla Okukhiphayo			-	132	-
Crss	I-Reverse Transfer Capacitance			-	70	-
td(VULIWE)	Vula Isikhathi Sokubambezeleka	VDD=20V, RL=20W,IDS=1A, VGEN=10V, RG=1W		-	12.6	-	ns
tr	Vula Isikhathi Sokuvuka			-	10	-
td(VALIWE)	Ukucisha Ukubambezeleka Isikhathi			-	23.6	-
tf	Ukuvala Isikhathi sokuwa			-	6	-
Izimpawu zokukhokhiswa kwesango d
Qg	Isamba Semali Yesango	VDS=20V, VGS=4.5V, IDS=7A		-	9.4	-	nC
Qg	Isamba Semali Yesango	VDS=20V, VGS=10V, IDS=7A		-	20	28
Qgth	I-Threshold Gate Charge			-	2	-
Qgs	I-Gate-Source Charge			-	3.9	-
Qgd	I-Gate-Drain Charge			-	3	-