I-WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET
Incazelo evamile
I-WSM320N04G iyi-MOSFET esebenza kahle kakhulu esebenzisa ukwakheka komsele futhi inomthamo wamaseli ophakeme kakhulu. Ine-RDSON enhle kakhulu kanye nokushajwa kwesango futhi ilungele izinhlelo zokusebenza eziningi zokuguqula ibhakede. I-WSM320N04G ihlangabezana nezidingo ze-RoHS kanye noMkhiqizo Ohlaza futhi iqinisekisiwe ukuba no-100% EAS nokuthembeka okuphelele kokusebenza.
Izici
Ubuchwepheshe be-Trench obuphezulu be-high cell density, kuyilapho ifaka nokushajwa kwesango okuphansi kokusebenza kahle. Ukwengeza, izigqaja ngokwehla okuhle kakhulu komphumela we-CdV/dt, isiqinisekiso se-EAS esingu-100% kanye nenketho evumelana nemvelo.
Izinhlelo zokusebenza
I-High Frequency Point-of-Load Buck Converter, I-Networking DC-DC Power System, Isicelo Sethuluzi Lamandla, ugwayi we-elekthronikhi, ukushaja okungenantambo, ama-drones, ezokwelapha, ukushaja imoto, izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, nezinto zikagesi ezithengwa abathengi.
Imingcele ebalulekile
Uphawu | Ipharamitha | Isilinganiso | Amayunithi | |
I-VDS | I-Drain-Source Voltage | 40 | V | |
VGS | Isango-Umthombo Voltage | ±20 | V | |
ID@TC=25℃ | I-Continuous Drin Current, VGS @ 10V1,7 | 320 | A | |
ID@TC=100℃ | I-Continuous Drin Current, VGS @ 10V1,7 | 192 | A | |
I-IDM | I-Pulsed Drain Yamanje2 | 900 | A | |
I-EAS | I-Single Pulse Avalanche Energy3 | 980 | mJ | |
I-IAS | I-Avalanche Yamanje | 70 | A | |
PD@TC=25℃ | Ukushabalaliswa kwamandla okuphelele4 | 250 | W | |
I-TSTG | Ibanga Lokushisa Lesitoreji | -55 kuya ku-175 | ℃ | |
TJ | I-Operating Junction Temperature Range | -55 kuya ku-175 | ℃ |
Uphawu | Ipharamitha | Izimo | Okuncane. | Thayipha. | Ubukhulu. | Iyunithi |
I-BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
△BVDSS/△TJ | I-BVDSS Temperature Coefficient | Ireferensi ku-25℃, ID=1mA | --- | 0.050 | --- | V/℃ |
I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=10V , ID=25A | --- | 1.2 | 1.5 | mΩ |
I-RDS(VULIWE) | I-Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 1.7 | 2.5 | mΩ |
I-VGS(th) | I-Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.6 | V |
△VGS(th) | I-VGS(th) I-Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
IDSS | I-Drain-Source Ukuvuza kwamanje | VDS=40V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=40V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
I-IGSS | Ukuvuza Kwesango Lomthombo Wamanje | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Phambili Transconductance | VDS=5V , ID=50A | --- | 160 | --- | S |
Rg | Isango Ukumelana | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
Qg | Isamba Semali Yesango (10V) | VDS=20V , VGS=10V , ID=25A | --- | 130 | --- | nC |
Qgs | I-Gate-Source Charge | --- | 43 | --- | ||
Qgd | I-Gate-Drain Charge | --- | 83 | --- | ||
I-Td(ivuliwe) | Vula Isikhathi Sokubambezeleka | VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A . | --- | 30 | --- | ns |
Tr | Isikhathi Sokuvuka | --- | 115 | --- | ||
Td(cishiwe) | Ukuvala Isikhathi Sokubambezeleka | --- | 95 | --- | ||
Tf | Isikhathi Sekwindla | --- | 80 | --- | ||
Ciss | Amandla Wokufaka | VDS=20V , VGS=0V , f=1MHz | --- | 8100 | --- | pF |
I-Coss | Amandla Okukhiphayo | --- | 1200 | --- | ||
Crss | I-Reverse Transfer Capacitance | --- | 800 | --- |