I-WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

incazelo emfushane:

Inombolo Yemodeli:I-WSF70P02

I-BVDSS:-20V

RDSON:6.8mΩ

I-ID:-70A

Isiteshi:Isiteshi se-P

Iphakheji:KUYA-252

Ihlobo Lomkhiqizo:I-WSF70P02 MOSFET ine-voltage engu -20V, yamanje engu -70A, ukumelana kwe-6.8mΩ, i-P-Channel, kanye ne-TO-252 yokupakisha.

Izicelo:Ogwayi be-elekthronikhi, amashaja angenantambo, izinjini, izipele zamandla, ama-drones, ukunakekelwa kwezempilo, amashaja emoto, izilawuli, izinto zikagesi, izinto zikagesi, nezimpahla zabathengi.

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Imininingwane Yomkhiqizo

Isicelo

Omaka bomkhiqizo

Incazelo evamile

I-WSF70P02 MOSFET iyithuluzi elisebenza kahle kakhulu le-P-channel elinomthamo omkhulu wamaseli. Inikeza i-RDSON evelele kanye nenkokhelo yesango yezinhlelo zokusebenza eziningi zokuguqula ibhakede ezivumelanisiwe. Idivayisi ihlangabezana nezidingo ze-RoHS kanye ne-Green Product, iqinisekiswe ngo-100% EAS, futhi igunyazelwe ukwethembeka okugcwele komsebenzi.

Izici

I-Advanced Trench Technology enomthamo omkhulu wamaseli, ukushajwa kwesango okuphansi kakhulu, ukuncishiswa okuhle kakhulu komphumela we-CdV/dt, isiqinisekiso se-EAS esingu-100%, nezinketho zamadivayisi alungele imvelo.

Izinhlelo zokusebenza

I-High Frequency Point-of-Load Synchronous ,I-Buck Converter ye-MB/NB/UMPC/VGA ,Inethiwekhi ye-DC-DC Power System,I-Layisha,I-E-cigarettes, ukushaja okungenantambo, izinjini, izinsiza zikagesi eziphuthumayo, ama-drones, ukunakekelwa kwezempilo, amashaja emoto , izilawuli, imikhiqizo yedijithali, izinto zikagesi ezincane zasendlini, izinto zikagesi zabathengi.

inombolo yezinto ezibonakalayo

I-AOS

Imingcele ebalulekile

Uphawu	Ipharamitha	Isilinganiso		Amayunithi
		10s	Izwe elizinzile
I-VDS	I-Drain-Source Voltage	-20		V
VGS	Isango-Umthombo Voltage	±12		V
ID@TC=25℃	Ukudonsa Okuqhubekayo Kwamanje, VGS @ -10V1	-70		A
ID@TC=100℃	Ukudonsa Okuqhubekayo Kwamanje, VGS @ -10V1	-36		A
I-IDM	I-Pulsed Drain Yamanje2	-200		A
I-EAS	I-Single Pulse Avalanche Energy3	360		mJ
I-IAS	I-Avalanche Yamanje	-55.4		A
PD@TC=25℃	Ukushabalaliswa kwamandla okuphelele4	80		W
I-TSTG	Ibanga Lokushisa Lesitoreji	- 55 kuya ku-150		℃
TJ	I-Operating Junction Temperature Range	- 55 kuya ku-150		℃

Uphawu	Ipharamitha	Izimo	Okuncane.	Thayipha.	Ubukhulu.	Iyunithi
I-BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	I-BVDSS Temperature Coefficient	Ireferensi ku-25℃ , ID=-1mA	---	-0.018	---	V/℃
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-15A	---	6.8	9.0	mΩ
I-RDS(VULIWE)	I-Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-10A	---	8.2	11
I-VGS(th)	I-Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.2	V
		VGS=VDS , ID =-250uA
△VGS(th)	I-VGS(th) I-Temperature Coefficient		---	2.94	---	mV/℃
IDSS	I-Drain-Source Ukuvuza kwamanje	VDS=-20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	I-Drain-Source Ukuvuza kwamanje					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	5
I-IGSS	Ukuvuza Kwesango Lomthombo Wamanje	VGS=±12V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=-5V , ID=-10A	---	45	---	S
Qg	Isamba Semali Yesango (-4.5V)	VDS=-15V , VGS=-4.5V , ID=-10A	---	63	---	nC
Qgs	I-Gate-Source Charge		---	9.1	---
Qgd	I-Gate-Drain Charge		---	13	---
I-Td(ivuliwe)	Vula Isikhathi Sokubambezeleka	VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Isikhathi Sokuvuka		---	77	---
Td(cishiwe)	Ukuvala Isikhathi Sokubambezeleka		---	195	---
Tf	Isikhathi Sekwindla		---	186	---
Ciss	Amandla Wokufaka	VDS=-10V , VGS=0V , f=1MHz	---	5783	---	pF
I-Coss	Amandla Okukhiphayo		---	520	---
Crss	I-Reverse Transfer Capacitance		---	445	---